2N653晶体管资料
2N653别名：2N653三极管、2N653晶体管、2N653晶体三极管
2N653生产厂家：美国电子晶体管公司_美国摩托罗拉半导体公司_SEM
2N653制作材料：Ge-PNP
2N653性质：低频或音频放大 （LF）_开关管 （S）
2N653封装形式：直插封装
2N653极限工作电压：30V
2N653最大电流允许值：0.25A
2N653最大工作频率：<1MHZ或未知
2N653引脚数：3
2N653最大耗散功率：0.2W
2N653放大倍数：β>30
2N653图片代号：D-9
2N653vtest：30
2N653htest：999900
- 2N653atest：0.25
2N653wtest：0.2
2N653代换 2N653用什么型号代替：AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,3AX85B,
2N653价格
参考价格：￥0.0000
型号：2N6534 品牌：Semiconductors 备注：这里有2N653多少钱，2026年最近7天走势，今日出价，今日竞价，2N653批发/采购报价，2N653行情走势销售排行榜，2N653报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N653 | alloy-junction germanium transistors [INTEX/ SEMITRONICS CORP] alloy-junction germanium transistors | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
2N653 | GERMANIUM PNPSMALL SIGNAL TRANSISTORS GERMANIUM PNP SMALL SIGNAL TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N653 | GERMABIUM PNP MESA TRANSISTORS GERMABIUM PNP MESA TRANSISTORS GERMABIUM PNP SMALL SIGNAL TRANSISTORS | AMMSEMI | | |
2N653 | Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • DARLINGTON • High DC current gain APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio amplifiers | SAVANTIC | | ||
NPN POWER TRANSISTOR NPN POWER TRANSISTOR TO-220 CASE | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power applications requiring extremely high gain. | CENTRAL | | ||
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
| ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE= 1000(Min.)@IC= 5A • Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 80V(Min.) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio amplif | ISC 无锡固电 | | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE= 500(Min.)@IC= 3A • Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 100V(Min.) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 3.0V(Max.)@ IC= 3A APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio amplif | ISC 无锡固电 | | ||
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
| ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
NPN POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power applications requiring extremely high gain. | CENTRAL | | ||
NPN POWER TRANSISTOR NPN POWER TRANSISTOR TO-220 CASE | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • DARLINGTON • High DC current gain APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio amplifiers | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • DARLINGTON • High DC current gain APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio amplifiers | SAVANTIC | | ||
NPN POWER TRANSISTOR NPN POWER TRANSISTOR TO-220 CASE | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
| ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
NPN POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power applications requiring extremely high gain. | CENTRAL | | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE= 1000(Min.)@IC= 5A • Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 100V(Min.) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio ampli | ISC 无锡固电 | | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE= 1000(Min.)@IC= 3A • Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 120V(Min.) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio ampli | ISC 无锡固电 | | ||
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
| ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
NPN POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power applications requiring extremely high gain. | CENTRAL | | ||
NPN POWER TRANSISTOR NPN POWER TRANSISTOR TO-220 CASE | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon Power Transistors DESCRIPTION • DARLINGTON • With TO-220 package APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio amplifiers | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • DARLINGTON • High DC current gain APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio amplifiers | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio amplifiers | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio amplifiers | JMNIC 锦美电子 | | ||
Silicon NPN Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE= 1000(Min.)@IC= 5A • Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 80V(Min.) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio ampli | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE= 1000(Min.)@IC= 5A • Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 80V(Min.) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio ampli | ISC 无锡固电 | | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE= 500(Min.)@IC= 3A • Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 100V(Min.) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 3.0V(Max.)@ IC= 3A APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio amplif | ISC 无锡固电 | | ||
Silicon Power Transistors DESCRIPTION • DARLINGTON • With TO-66 package APPLICATIONS • Power switching • Hammer drivers • Series and shuntregulators • Audio amplifiers | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON APPLICATIONS • Power switching • Hammer drivers • Series and shuntregulators • Audio amplifiers | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON APPLICATIONS • Power switching • Hammer drivers • Series and shuntregulators • Audio amplifiers | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio amplifiers | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio amplifiers | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio amplifiers | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio amplifiers | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio amplifiers | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio amplifiers | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio amplifiers | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • DARLINGTON APPLICATIONS • Power switching • Hammer drivers • Series and shunt regulators • Audio amplifiers | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：100.31 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：100.33 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：100.31 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：100.34 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon Power Transistors 文件：122.4 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：161.27 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：114 Kbytes Page：3 Pages | SAVANTIC | | ||
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package.(80V, 8A) 文件：15.29 Kbytes Page：1 Pages | SEME-LAB | | ||
Trans GP BJT NPN 80V 8A 3-Pin(2+Tab) TO-66 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Bipolar NPN Device in a Hermetically sealed TO66 文件：16.1 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar NPN Device 文件：11.91 Kbytes Page：1 Pages | SEME-LAB | | ||
Trans GP BJT NPN 100V 8A 3-Pin(2+Tab) TO-66 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors 文件：113.81 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon Power Transistors 文件：125.49 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：161.3 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Bipolar NPN Device in a Hermetically sealed TO66 文件：15.29 Kbytes Page：1 Pages | SEME-LAB | | ||
Silicon NPN Power Transistors 文件：113.78 Kbytes Page：3 Pages | SAVANTIC | | ||
Bipolar NPN Device 文件：11.06 Kbytes Page：1 Pages | SEME-LAB | | ||
Silicon NPN Power Transistors 文件：113.92 Kbytes Page：3 Pages | SAVANTIC | |
2N653产品属性
- 类型
描述
- Maximum Transition Frequency：
200MHz
- Maximum Power Dissipation：
625mW
- Maximum Operating Temperature：
150°C
- Maximum Emitter Base Voltage：
5V
- Maximum DC Collector Current：
0.5A
- Maximum Collector Emitter Voltage：
350V
- Maximum Collector Emitter Saturation Voltage：
0.3@1mA@10mA
- Maximum Collector Base Voltage：
350V
- Material：
Si
- Configuration：
Single
- Category：
Bipolar Small Signal
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
25+ |
TO-220-3 |
11580 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
TI |
25+ |
TO-220-3 |
11528 |
样件支持,可原厂排单订货! |
|||
MOTOROLA/摩托罗拉 |
20+ |
TO-66 |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
MOT |
24+ |
CAN3 |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ST |
1012 |
TO220 |
70 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
25+ |
TO220 |
140 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
24+ |
TO-66 |
10000 |
全新 |
||||
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN3 |
1200 |
原装铁帽专营,代理渠道量大可订货 |
|||
ON/安森美 |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
|||
MOTOROLA |
24+ |
CAN3 |
1000 |
原装现货假一罚十 |
2N653规格书下载地址
2N653参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
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- 4735
- 47301
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- 2N6539
- 2N6538
- 2N6537
- 2N6536
- 2N6535
- 2N6534B
- 2N6534
- 2N6533
- 2N6532
- 2N6531
- 2N6530
- 2N652A
- 2N6529
- 2N6528
- 2N6527
- 2N6526
- 2N6525
- 2N6524
- 2N6523
- 2N6522
- 2N6521
- 2N6520
- 2N652(A)
- 2N652
- 2N651A
- 2N6519
- 2N6518
- 2N6517M
- 2N6517G
- 2N6517
- 2N6516
- 2N6515
- 2N6514
- 2N6513
- 2N6512
- 2N6511
- 2N6510
- 2N651
- 2N650A
- 2N6509T
- 2N6509G
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2019-2-18
DdatasheetPDF页码索引
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