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2N635晶体管资料
2N635别名：2N635三极管、2N635晶体管、2N635晶体三极管
2N635生产厂家：CSR_美国电子晶体管公司
2N635制作材料：Ge-NPN
2N635性质：低频或音频放大 （LF）_开关管 （S）
2N635封装形式：直插封装
2N635极限工作电压：20V
2N635最大电流允许值：0.3A
2N635最大工作频率：>10MHZ
2N635引脚数：3
2N635最大耗散功率：
2N635放大倍数：
2N635图片代号：C-65
2N635vtest：20
2N635htest：10000100
- 2N635atest：0.3
2N635wtest：0
2N635代换 2N635用什么型号代替：ASY28,ASY29,ASY73,ASY74,ASY75,2N1306,3BX85A,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN DARLINGTON POWER SILICON TRANSISTOR NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 | Microsemi 美高森美 |   | ||
NPN POWER DARLINGTON 5 AMP SWITCHING TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN DARLINGTON TRANSISTOR 5 AMP SWITCHING TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN DARLINGTON POWER SILICON TRANSISTOR NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 | Microsemi 美高森美 | | ||
NPN POWER DARLINGTON 5 AMP SWITCHING TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN POWER DARLINGTON 5 AMP SWITCHING TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
NPN DARLINGTON POWER SILICON TRANSISTOR NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 | Microsemi 美高森美 | | ||
NPN DARLINGTON POWER SILICON TRANSISTOR NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/472 | Microsemi 美高森美 | | ||
NPN POWER DARLINGTON 5 AMP SWITCHING TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
SI NPN POWER BJT Description: Si NPN Power BJT, I(C) = 10 A TO 19.9 A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Fast switching speed ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·For switching applications in military and industrial equipment | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Fast switching speed ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·For switching applications in military and industrial equipment | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Fast switching speed ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·For switching applications in military and industrial equipment | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • DARLINGTON APPLICATIONS • For general-purpose amplifier and low-frequency switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • DARLINGTON APPLICATIONS • For general-purpose amplifier and low-frequency switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • DARLINGTON APPLICATIONS • For general-purpose amplifier and low-frequency switching applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • DARLINGTON APPLICATIONS • For general-purpose amplifier and low-frequency switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • DARLINGTON APPLICATIONS • For general-purpose amplifier and low-frequency switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • DARLINGTON APPLICATIONS • For general-purpose amplifier and low-frequency switching applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • DARLINGTON APPLICATIONS • For general-purpose amplifier and low-frequency switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • DARLINGTON APPLICATIONS • For general-purpose amplifier and low-frequency switching applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • DARLINGTON APPLICATIONS • For general-purpose amplifier and low-frequency switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • DARLINGTON APPLICATIONS • For general-purpose amplifier and low-frequency switching applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • DARLINGTON APPLICATIONS • For general-purpose amplifier and low-frequency switching applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • DARLINGTON APPLICATIONS • For general-purpose amplifier and low-frequency switching applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • High DC current gain • DARLINGTON APPLICATIONS • For general-purpose amplifier and low-frequency switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain • Excellent safe operating area APPLICATIONS • Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain • Excellent safe operating area APPLICATIONS • Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High DC current gain • Excellent safe operating area APPLICATIONS • Designed for high power applications and switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. | SAVANTIC | | ||
封装/外壳：TO-205AC，TO-33-4 金属罐 包装：散装 描述：TRANS NPN DARL 150V 5A TO33 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Microchip 微芯科技 | | ||
Darlington NPN Silicon Power 80V to 150V, 5A | Microchip 微芯科技 | | ||
封装/外壳：TO-205AC，TO-33-4 金属罐 包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Microchip 微芯科技 | | ||
Trans Darlington NPN 80V 5A 4-Pin(3+Tab) TO-213AA | NJS | | ||
Darlington NPN Silicon Power 80V to 150V, 5A PIND Tested | Microchip 微芯科技 | | ||
Silicon NPN Power Transistors 文件：154.88 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：154.88 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：112.3 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：154.88 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：153.17 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：111.68 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：153.17 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：153.39 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：111.74 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：153.39 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：155.18 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：111.89 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：155.18 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：112.07 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：155.17 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：155.17 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：154.06 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：112.95 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：154.06 Kbytes Page：3 Pages | JMNIC 锦美电子 | |
2N635产品属性
- 类型
描述
- 型号
2N635
- 功能描述
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 300MA I(C) | TO-9
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA/摩托罗拉 |
2450+ |
CAN4 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
MICROSEMI |
24+ |
SMD |
1680 |
MICROSEMI专营品牌进口原装现货假一赔十 |
|||
MICROCHIP(美国微芯) |
24+ |
TO33 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
MICROSEMI/美高森美 |
22+ |
CAN |
12245 |
现货,原厂原装假一罚十! |
|||
NES |
QQ咨询 |
CAN |
63 |
全新原装 研究所指定供货商 |
|||
MOT |
24+ |
CAN4 |
120000 |
||||
NES/MSC |
专业铁帽 |
CAN4 |
1500 |
原装铁帽专营,代理渠道量大可订货 |
|||
NES/MSC |
专业铁帽 |
CAN4 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
MTO |
23+ |
CAN |
5000 |
原装正品,假一罚十 |
|||
MSC |
24+ |
CAN4 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
2N635规格书下载地址
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2N635数据表相关新闻
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2019-2-18
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