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2N632晶体管资料
2N632别名:2N632三极管、2N632晶体管、2N632晶体三极管
2N632生产厂家:CSR_美国电子晶体管公司_IDI
2N632制作材料:Ge-PNP
2N632性质:低频或音频放大 (LF)
2N632封装形式:直插封装
2N632极限工作电压:30V
2N632最大电流允许值:0.05A
2N632最大工作频率:<1MHZ或未知
2N632引脚数:3
2N632最大耗散功率:0.167W
2N632放大倍数:
2N632图片代号:D-9
2N632vtest:30
2N632htest:999900
- 2N632atest:0.05
2N632wtest:0.167
2N632代换 2N632用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,2SB54,2SB56,3AX54A,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
30AMPNPNHIGHVOLTAGE/HIGHENERGY200VOLTS 30AMPHIGHSPEEDNPNTRANSISTOR150VOLTS 30AMPNPNHIGHVOLTAGE/HIGHENERGY200VOLTS 30AMPHIGHPOWERNPNTRANSISTORS200AND250VOLTS | SSDI Solid States Devices, Inc | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highcurrentandhighpowercapability •Lowcollectorsaturationvoltage APPLICATIONS •Foruseinhighcurrent,highpowerapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •Highcurrentandhighpowercapability •Lowcollectorsaturationvoltage APPLICATIONS •Foruseinhighcurrent,highpowerapplications | SAVANTIC Savantic, Inc. | |||
30AMPNPNHIGHVOLTAGE/HIGHENERGY200VOLTS 30AMPHIGHSPEEDNPNTRANSISTOR150VOLTS 30AMPNPNHIGHVOLTAGE/HIGHENERGY200VOLTS 30AMPHIGHPOWERNPNTRANSISTORS200AND250VOLTS | SSDI Solid States Devices, Inc | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·Lowcollectorsaturationvoltage ·HighDCcurrentgain APPLICATIONS ·Designedforaudioamplifierandswitchingcircuitsapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·Lowcollectorsaturationvoltage ·HighDCcurrentgain APPLICATIONS ·Designedforaudioamplifierandswitchingcircuitsapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·Lowcollectorsaturationvoltage ·HighDCcurrentgain APPLICATIONS ·Designedforaudioamplifierandswitchingcircuitsapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·Lowcollectorsaturationvoltage ·HighDCcurrentgain APPLICATIONS ·Designedforaudioamplifierandswitchingcircuitsapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·Lowcollectorsaturationvoltage ·HighDCcurrentgain APPLICATIONS ·Designedforaudioamplifierandswitchingcircuitsapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·Lowcollectorsaturationvoltage ·HighDCcurrentgain APPLICATIONS ·Designedforaudioamplifierandswitchingcircuitsapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·Lowcollectorsaturationvoltage ·HighDCcurrentgain APPLICATIONS ·Designedforaudioamplifierandswitchingcircuitsapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·Lowcollectorsaturationvoltage ·HighDCcurrentgain APPLICATIONS ·Designedforaudioamplifierandswitchingcircuitsapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·Lowcollectorsaturationvoltage ·HighDCcurrentgain APPLICATIONS ·Designedforaudioamplifierandswitchingcircuitsapplications | SAVANTIC Savantic, Inc. | |||
NPNTransistor(30A,100V) NPNTransistor(30A,100V) | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
SINPNPOWERBJT Description:SiNPNPowerBJT,I(C)=20Ato49.9A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
PNPTransistor(30A,60V) PNPTransistor(30A,60V) | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | |||
P-N-PSILICONPOWERTRANSISTORS [Magnatec] FORPOWER-AMPLIFIERANDHIGH-SPEED-SWITCHINGAPPLICATIONS DESIGNEDFORCOMPLEMENTARYUSEWITH2N6326,2N6327,2N6328 •200Wat25°CCaseTemperature •30-ARatedCollectorCurrent •200-mJReverseEnergyRating •HighSOACapability,20Vand10A | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
SiliconNPNPowerTransistors 文件:111.79 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
封装/外壳:TO-204AA,TO-3 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | |||
封装/外壳:TO-211MB,TO-63-4,接线柱 包装:散装 描述:TRANS PNP 200V 30A TO63 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | |||
SiliconNPNPowerTransistors 文件:113.43 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors 文件:156.64 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistor 文件:133.84 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNPowerTransistors 文件:156.64 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistor 文件:133.74 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNPowerTransistors 文件:113.43 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors 文件:113.43 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
iscSiliconPNPPowerTransistor 文件:263.63 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |
2N632产品属性
- 类型
描述
- 型号
2N632
- 制造商
Microsemi Corporation
- 功能描述
TRANS GP BJT NPN 200V 30A 3PIN TO-3 - Bulk
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON |
1738+ |
TO-3 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
ISC/固电 |
23+ |
TO-3 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ST |
23+ |
DIPSMD |
16900 |
正规渠道,只有原装! |
|||
ST |
21+ |
DIPSMD |
23480 |
||||
24+ |
TO-3 |
10000 |
全新 |
||||
MOTOROLA/摩托罗拉 |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
MOTOROLA |
专业铁帽 |
TO-3 |
1200 |
原装铁帽专营,代理渠道量大可订货 |
|||
ISC |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
ST |
25+ |
DIPSMD |
16900 |
原装,请咨询 |
2N632规格书下载地址
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2019-2-18
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