2N626晶体管资料
2N626别名：2N626三极管、2N626晶体管、2N626晶体三极管
2N626生产厂家：
2N626制作材料：Ge-NPN
2N626性质：
2N626封装形式：特殊封装
2N626极限工作电压：30V
2N626最大电流允许值：
2N626最大工作频率：<1MHZ或未知
2N626引脚数：
2N626最大耗散功率：
2N626放大倍数：β>18000
2N626图片代号：NO
2N626vtest：30
2N626htest：999900
- 2N626atest：0
2N626wtest：0
2N626代换 2N626用什么型号代替：
2N626价格
参考价格：￥0.0000
型号：2N6264 品牌：RCA 备注：这里有2N626多少钱，2026年最近7天走势，今日出价，今日竞价，2N626批发/采购报价，2N626行情走势销售排行榜，2N626报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Power Transistors Power Transistors TO-66 Case | CENTRAL |   | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low saturation voltage • Wide safe operating area APPLICATIONS • Power switching circuits • High-fidelity amplifers • Solenoid drivers • Series and shunt-regulator driver and output stages | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low saturation voltage • Wide safe operating area APPLICATIONS • Power switching circuits • High-fidelity amplifers • Solenoid drivers • Series and shunt-regulator driver and output stages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low saturation voltage • Wide safe operating area APPLICATIONS • Power switching circuits • High-fidelity amplifers • Solenoid drivers • Series and shunt-regulator driver and output stages | SAVANTIC | | ||
HOMETAXIAL-BASE MEDIUM POWER SILICON NPN TRANSISTOR FEATURES • fT = 800 kHz at 0.2A • Maximum Safe-area of operation curves for dc and pulse operation. • VCEV(sus) = 90V min • Low Saturation Voltage: VCE(sat = 1.0V at IC = 0.5A) APPLICATIONS • Power Switching Circuits • Series and shunt-regulator driver and output stages • High-fidelity amp | SEME-LAB | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Wide safe operating area APPLICATIONS • Power switching circuits • Series and shunt-regulator driver and output stages • High-fidelity amplifers • Solenoid drivers | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low saturation voltage • Wide safe operating area APPLICATIONS • Power switching circuits • Series and shunt-regulator driver and output stages • High-fidelity amplifers • Solenoid drivers | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Low collector saturation voltage • Wide safe operating area APPLICATIONS • Power switching circuits • Series and shunt-regulator driver and output stages • High-fidelity amplifers • Solenoid drivers | ISC 无锡固电 | | ||
SI PNP POWER BJT Description: Si NPN Power BJT, I(C) = 2.5 A to 4.9 A | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Power Transistors Power Transistors TO-66 Case | CENTRAL | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for audio amplifier and switching circuits applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Designed for audio amplifier and switching circuits applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • High breakdown voltage • Low collector saturation voltage APPLICATIONS • A wide variety of medium-to-high power, high-voltage applications • Series and shunt regulators • High-fidelity amplifiers • Power switching circuits • Solenoid drivers | ISC 无锡固电 | | ||
Power Transistors Power Transistors TO-66 Case | CENTRAL | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • High breakdown voltage • Low collector saturation voltage APPLICATIONS • A wide variety of medium-to-high power, high-voltage applications • Series and shunt regulators • High-fidelity amplifiers • Power switching circuits • Solenoid drivers | SAVANTIC | | ||
ELECTRICAL CHARACTERISTICS
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
ELECTRICAL CHARACTERISTICS
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • High breakdown voltage • Low collector saturation voltage APPLICATIONS • A wide variety of medium-to-high power, high-voltage applications • Series and shunt regulators • High-fidelity amplifiers • Power switching circuits • Solenoid drivers | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • High breakdown voltage • Low collector saturation voltage APPLICATIONS • A wide variety of medium-to-high power, high-voltage applications • Series and shunt regulators • High-fidelity amplifiers • Power switching circuits • Solenoid drivers | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：113.08 Kbytes Page：3 Pages | SAVANTIC | | ||
Bipolar NPN Device 文件：11.91 Kbytes Page：1 Pages | SEME-LAB | | ||
Silicon NPN Power Transistors 文件：152.74 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：152.74 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors 文件：140.15 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MICROCHIP 微芯科技 | | ||
Silicon NPN Power Transistors 文件：112.91 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：140.15 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistor 文件：137.75 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors 文件：111.82 Kbytes Page：3 Pages | SAVANTIC | | ||
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.(150V, 10A) 文件：14.69 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar Junction Transistors | TTELEC | | ||
Trans GP BJT NPN 120V 3A 3-Pin(2+Tab) TO-66 Sleeve | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Bipolar NPN Device 文件：11.91 Kbytes Page：1 Pages | SEME-LAB | | ||
Silicon NPN Power Transistors 文件：118.08 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：118.08 Kbytes Page：3 Pages | SAVANTIC | | ||
Bipolar NPN Device 文件：11.78 Kbytes Page：1 Pages | SEME-LAB | | ||
Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch Central Semiconductor | CENTRAL | |
2N626产品属性
- 类型
描述
- Maximum Transition Frequency：
0.8(Min)MHz
- Maximum Power Dissipation：
20000mW
- Maximum DC Collector Current：
3A
- Maximum Collector Emitter Voltage：
120V
- Maximum Collector Emitter Saturation Voltage：
1.2@0.5AV
- Maximum Collector Base Voltage：
140V
- Material：
Si
- Configuration：
Single
- Category：
Bipolar Power
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microchip Technology / Atmel |
25+ |
N/A |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
Microchip Technology / Atmel |
25+ |
N/A |
6843 |
样件支持,可原厂排单订货! |
|||
ASI |
22+ |
TO-213AA |
20000 |
公司只有原装 品质保证 |
|||
MOTOROLA/摩托罗拉 |
20+ |
TO-66 |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
ASI |
TO-213AA |
40 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
ASI |
TO-213AA |
5000 |
原装进口公司现货假一赔十 |
||||
24+ |
TO-3 |
10000 |
全新 |
||||
ASI |
23+ |
DIP |
5000 |
原装正品,假一罚十 |
|||
ASI |
23+ |
TO-213AA |
6500 |
专注配单,只做原装进口现货 |
|||
MOTOROLA |
专业铁帽 |
TO-66 |
1500 |
原装铁帽专营,代理渠道量大可订货 |
2N626规格书下载地址
2N626参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2N6280
- 2N628
- 2N6279
- 2N6278
- 2N6277A
- 2N6277
- 2N6276A
- 2N6276
- 2N6275A
- 2N6275
- 2N6274A
- 2N6274
- 2N6273
- 2N6272
- 2N6271
- 2N6270
- 2N627
- 2N6269
- 2N6268
- 2N6267
- 2N6266
- 2N6265
- 2N6264
- 2N6263
- 2N6262
- 2N6261
- 2N6260
- 2N6259
- 2N6258
- 2N6257
- 2N6256
- 2N6255
- 2N6254
- 2N6253
- 2N6251
- 2N6250
- 2N625
- 2N6249
- 2N6248
- 2N6247
- 2N6246
- 2N6245
- 2N6241
- 2N6240
- 2N624
- 2N6239
- 2N6238
- 2N6237
- 2N6236
- 2N6235X
2N626数据表相关新闻
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2023-2-232N60L-TO220F1T-TG_UTC代理商
2N60L-TO220F1T-TG_UTC代理商
2023-2-32N7000L-TO92B-TG
2N7000L-TO92B-TG
2023-1-302N6043G
原装代理
2022-7-232N6509G中文资料
2N6509G中文资料
2019-2-18
DdatasheetPDF页码索引
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