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2N6059晶体管资料
2N6059别名：2N6059三极管、2N6059晶体管、2N6059晶体三极管
2N6059生产厂家：美国摩托罗拉半导体公司_德国电子元件股份公司_美国
2N6059制作材料：Si-N+Darl+Di
2N6059性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2N6059封装形式：直插封装
2N6059极限工作电压：100V
2N6059最大电流允许值：12A
2N6059最大工作频率：<1MHZ或未知
2N6059引脚数：2
2N6059最大耗散功率：150W
2N6059放大倍数：β>750
2N6059图片代号：E-44
2N6059vtest：100
2N6059htest：999900
- 2N6059atest：12
2N6059wtest：150
2N6059代换 2N6059用什么型号代替：BDV65A,BDW83C,BDX65B,BDX67B,BDX87C,FH9D,MJ4035,TIP141,TIP642,2SC1830,2SD685,
2N6059价格
参考价格：￥17.1418
型号：2N6059 品牌：MULTICOMP 备注：这里有2N6059多少钱，2025年最近7天走势，今日出价，今日竞价，2N6059批发/采购报价，2N6059行情走势销售排行榜，2N6059报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2N6059 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS Darlington Complementary Silicon Power Transistors . . . designed for general−purpose amplifier and low frequency switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 80 Vdc (Min) — 2N6058 | ONSEMI 安森美半导体 |   | |
2N6059 | SILICON NPN POWER DARLINGTON TRANSISTOR DESCRIPTION The 2N6059 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for use in power linear and low frequency switching applications. ■ STMicrolectronics PREFERRED SALESTYPE ■ HIGH GAIN ■ NPN DARL | STMICROELECTRONICS 意法半导体 | | |
2N6059 | POWER TRANSISTORS(12A,150W) DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - | MOSPEC 统懋 | | |
2N6059 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS | boca 博卡 | | |
2N6059 | NPN DARLINGTON POWER SILICON TRANSISTOR NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/502 | Microsemi 美高森美 | | |
2N6059 | Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
2N6059 | Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High gain ·High current ·High dissipation ·Complement to type 2N5883/2N5884 APPLICATIONS ·They are intended for use in power linear and low frequency switching applications | JMNIC 锦美电子 | | |
2N6059 | Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current ;high dissipation ·DARLINGTON ·Complement to type 2N5883;2N5884 APPLICATIONS ·They are intended for use in power linear and low frequency switching applications | SAVANTIC | | |
2N6059 | isc Silicon NPN Darlingtion Power Transistor DESCRIPTION • With TO-3 package • High current ;high dissipation • DARLINGTON • Complement to type 2N5883;2N5884 APPLICATIONS • They are intended for use in power linear and low frequency switching applications | ISC 无锡固电 | | |
2N6059 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
2N6059 | SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. | Central | | |
2N6059 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
2N6059 | NPN DARLINGTON TRANSISTOR DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
2N6059 | SILICON MULTI-EPITAXIAL NPN TRANSISTOR • High Current Capability. • Hermetic TO3 Metal package. • Screening Options Available | TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司 | | |
2N6059 | isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gainhFE = 300 (Min) @ IC = 5A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amp | ISC 无锡固电 | | |
2N6059 | POWER COMPLEMENTARY SILICON TRANSISTORS POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types ar | COMSET | | |
2N6059 | Bipolar NPN Device in a Hermetically sealed TO3 文件：16.32 Kbytes Page：1 Pages | SEME-LAB Seme LAB | | |
2N6059 | 封装/外壳：TO-204AA，TO-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN DARL 100V 12A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | |
2N6059 | 包装：散装 描述：PNP POWER TRANSISTOR SILICON AMP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Microchip 微芯科技 | | |
2N6059 | Silicon NPN Power Transistors 文件：115.28 Kbytes Page：3 Pages | SAVANTIC | | |
2N6059 | SILICON NPN POWER DARLINGTON TRANSISTOR 文件：45.48 Kbytes Page：4 Pages | STMICROELECTRONICS 意法半导体 | | |
2N6059 | SILICON MULTI-EPITAXIAL NPN TRANSISTOR 文件：185.99 Kbytes Page：3 Pages | SEME-LAB Seme LAB | | |
2N6059 | POWER COMPLEMENTARY SILICON TRANSISTORS 文件：80.97 Kbytes Page：3 Pages | COMSET | | |
2N6059 | Silicon NPN Power Transistors 文件：132.11 Kbytes Page：3 Pages | ISC 无锡固电 | | |
2N6059 | Darlington Complementary Silicon Power Transistors 文件：149.78 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | |
2N6059 | Darlington Complementary Silicon Power Transistors 文件：130.66 Kbytes Page：8 Pages | ONSEMI 安森美半导体 | | |
SILICON NPN POWER DARLINGTON TRANSISTOR 文件：45.48 Kbytes Page：4 Pages | STMICROELECTRONICS 意法半导体 | | ||
SILICON MULTI-EPITAXIAL NPN TRANSISTOR 文件：185.99 Kbytes Page：3 Pages | SEME-LAB Seme LAB | |
2N6059产品属性
- 类型
描述
- 型号
2N6059
- 功能描述
达林顿晶体管 NPN Darlington LTB 9-2009
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
20+ |
TO-3 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
MOTOROLA/摩托罗拉 |
2450+ |
TO-2 |
6540 |
原装现货或订发货1-2周 |
|||
ST/意法 |
22+ |
N |
28000 |
原装现货只有原装.假一罚十 |
|||
MOTOROLA/摩托罗拉 |
19+ |
MODULE |
1290 |
主打模块,大量现货供应商QQ2355605126 |
|||
ST |
23+ |
TO-3 |
16900 |
正规渠道,只有原装! |
|||
2015+ |
3000 |
公司现货库存 |
|||||
2015+ |
3000 |
公司现货库存 |
|||||
24+ |
TO-3 |
10000 |
全新 |
||||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
Central |
2000 |
TO-3 |
20 |
原装现货海量库存欢迎咨询 |
2N6059规格书下载地址
2N6059参数引脚图相关
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- 4921
- 4899
- 485接口
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- 4735
- 47301
- 4591
- 4536
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- 4066
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- 3579
- 35001
- 3477
- 31337
- 303c
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- 2N6074A
- 2N6074
- 2N6073B
- 2N6073A
- 2N6073
- 2N6072B
- 2N6072A
- 2N6072
- 2N6071B
- 2N6071A
- 2N6071
- 2N6070B
- 2N6070A
- 2N6070
- 2N607
- 2N6069B
- 2N6069A
- 2N6069
- 2N6068B
- 2N6068A
- 2N6068
- 2N6067
- 2N6066
- 2N6065
- 2N6064
- 2N6063
- 2N6062
- 2N6061
- 2N6060
- 2N606
- 2N6058
- 2N6057
- 2N6056
- 2N6055
- 2N6054
- 2N6053
- 2N6052G
- 2N6052
- 2N6051
- 2N6050
- 2N605
- 2N6049E
- 2N6049
- 2N6048
- 2N6047
- 2N6046
- 2N6045G
- 2N6045
- 2N6044
- 2N6043G
- 2N6043
- 2N6042G
- 2N6042
- 2N6041
- 2N6040
2N6059数据表相关新闻
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原装代理
2022-7-232N6509G中文资料
2N6509G中文资料
2019-2-18
DdatasheetPDF页码索引
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