NPN DARLINGTON POWER SILICON TRANSISTOR

NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/502

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors . . . designed for general−purpose amplifier and low frequency switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 80 Vdc (Min) — 2N6058

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS

SILICON DARLINGTON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications.

POWER TRANSISTORS(12A,150W)

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

POWER COMPLEMENTARY SILICON TRANSISTORS

POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types ar

isc Silicon NPN Darlingtion Power Transistor

DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gainhFE = 300 (Min) @ IC = 5A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amp

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High gain ·High current ·High dissipation ·Complement to type 2N5883/2N5884 APPLICATIONS ·They are intended for use in power linear and low frequency switching applications

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

NPN DARLINGTON TRANSISTOR

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High current ;high dissipation ·DARLINGTON ·Complement to type 2N5883;2N5884 APPLICATIONS ·They are intended for use in power linear and low frequency switching applications

Power Transistors

Power Transistors

SILICON NPN POWER DARLINGTON TRANSISTOR

DESCRIPTION The 2N6059 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for use in power linear and low frequency switching applications. ■ STMicrolectronics PREFERRED SALESTYPE ■ HIGH GAIN ■ NPN DARL

SILICON MULTI-EPITAXIAL NPN TRANSISTOR

• High Current Capability. • Hermetic TO3 Metal package. • Screening Options Available

Darlington NPN Silicon Power 80V 100V, 12A

This specification covers the performance requirements for NPN silicon power Darlington, 2N6058 and 2N6059 transistors. Three levels of product assurance are (JAN, JANTX and JANTXV) provided for each encapsulated device as specified in MIL-PRF-19500/502. The device package outlines are as follows: T

包装：散装 描述：PNP POWER TRANSISTOR SILICON AMP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SILICON MULTI-EPITAXIAL NPN TRANSISTOR

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SILICON NPN POWER DARLINGTON TRANSISTOR

文件：45.48 Kbytes Page：4 Pages

Silicon NPN Power Transistors

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Silicon NPN Power Transistors

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Bipolar NPN Device in a Hermetically sealed TO3

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封装/外壳：TO-204AA，TO-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN DARL 100V 12A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

POWER COMPLEMENTARY SILICON TRANSISTORS

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Darlington Complementary Silicon Power Transistors

文件：130.66 Kbytes Page：8 Pages

Darlington Complementary Silicon Power Transistors

文件：149.78 Kbytes Page：7 Pages

SILICON NPN POWER DARLINGTON TRANSISTOR

文件：45.48 Kbytes Page：4 Pages

SILICON MULTI-EPITAXIAL NPN TRANSISTOR

文件：185.99 Kbytes Page：3 Pages