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2N6057晶体管资料
2N6057别名：2N6057三极管、2N6057晶体管、2N6057晶体三极管
2N6057生产厂家：美国摩托罗拉半导体公司_德国电子元件股份公司_美国
2N6057制作材料：Si-N+Darl+Di
2N6057性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2N6057封装形式：直插封装
2N6057极限工作电压：60V
2N6057最大电流允许值：12A
2N6057最大工作频率：<1MHZ或未知
2N6057引脚数：2
2N6057最大耗散功率：150W
2N6057放大倍数：β>750
2N6057图片代号：E-44
2N6057vtest：60
2N6057htest：999900
- 2N6057atest：12
2N6057wtest：150
2N6057代换 2N6057用什么型号代替：BDV67,BDW83A,BDX65,BDX67,BDX87A,FH9C,MJ4033,TIP640,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N6057 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS | boca 博卡 |   | |
2N6057 | SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. | Central | | |
2N6057 | POWER TRANSISTORS(12A,150W) DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - | MOSPEC 统懋 | | |
2N6057 | POWER COMPLEMENTARY SILICON TRANSISTORS POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types ar | COMSET | | |
2N6057 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N6057 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain - | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N6057 | Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
2N6057 | isc Silicon NPN Darlingtion Power Transistor 文件：146.55 Kbytes Page：2 Pages | ISC 无锡固电 | | |
2N6057 | POWER COMPLEMENTARY SILICON TRANSISTORS 文件：80.97 Kbytes Page：3 Pages | COMSET | | |
2N6057 | Bipolar NPN Device in a Hermetically sealed TO3 文件：15.52 Kbytes Page：1 Pages | SEME-LAB | | |
2N6057 | 封装/外壳：TO-204AA，TO-3 包装：卷带（TR） 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Microchip 微芯科技 | | |
2N6057 | Bipolar Junction Transistors | TTELEC | | |
POWER COMPLEMENTARY SILICON TRANSISTORS 文件：80.97 Kbytes Page：3 Pages | COMSET | |
2N6057产品属性
- 类型
描述
- 型号
2N6057
- 功能描述
达林顿晶体管 NPN Pwr Darlington
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
4018 |
原装现货,当天可交货,原型号开票 |
|||
MOTOROLA/摩托罗拉 |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
MOTORORA |
CAN |
56520 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST/意法 |
23+ |
TO-3 |
8160 |
原厂原装 |
|||
MOTOROLA/摩托罗拉 |
25+ |
CAN |
880000 |
明嘉莱只做原装正品现货 |
|||
ST |
92+ |
TO-3 |
764 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
23+ |
TO-3 |
16900 |
正规渠道,只有原装! |
|||
MOT |
25+ |
4 |
公司优势库存 热卖中!! |
||||
24+ |
TO-3 |
10000 |
全新 |
||||
MOTOROLA |
24+ |
TO-3 |
1500 |
原装现货假一罚十 |
2N6057芯片相关品牌
2N6057规格书下载地址
2N6057参数引脚图相关
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2N6057数据表相关新闻
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原装代理
2022-7-232N6509G中文资料
2N6509G中文资料
2019-2-18
DdatasheetPDF页码索引
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