POWER TRANSISTORS(10A,80W)

. . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044 = 100 V (Min) – 2N6042, 2N6045 • Collecto

COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (M

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2N6040/6041/6042 • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier and low-speed switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2N6040/6041/6042 • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier and low-speed switching applications

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 80V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): 2V(Max) @IC= 4A APPLICATIONS · Designed for general purpose amplifier and low speed switching applications.

POWER DERATING

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

isc Silicon NPN Power Transistors

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2N6044 - 达林顿晶体管, NPN, 10A, TO-220

Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

Trans Darlington NPN 80V 10A 3-Pin(3+Tab) TO-220 Box

Silicon NPN Power Transistors

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COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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