POWER TRANSISTORS(10A,80W)

. . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044 = 100 V (Min) – 2N6042, 2N6045 • Collecto

COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (M

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2N6040/6041/6042 • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier and low-speed switching applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • Complement to type 2N6040/6041/6042 • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier and low-speed switching applications

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER

POWER DERATING

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):2.0V(Max) @IC=4.0A APPLICATIONS · Designed for medium power switching amplifier applications.

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 60V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistors

文件：141.7 Kbytes Page：3 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：152.48 Kbytes Page：6 Pages

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件：260.18 Kbytes Page：2 Pages

Trans Darlington NPN 60V 10A 3-Pin(3+Tab) TO-220 Box

Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

8.0 A，60 V，NPN 达林顿双极功率晶体管

Plastic Medium-Power Complementary Silicon Transistors

文件：113.08 Kbytes Page：6 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：114.69 Kbytes Page：8 Pages

Plastic Medium?뭁ower Complementary Silicon Transistors

文件：94.72 Kbytes Page：6 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：113.08 Kbytes Page：6 Pages

Plastic Medium?뭁ower Complementary Silicon Transistors

文件：94.72 Kbytes Page：6 Pages

Plastic Medium-Power Complementary Silicon Transistors

文件：152.48 Kbytes Page：6 Pages

封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN DARL 60V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个