isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=-100V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= -2.0V(Max) @IC=-3A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

封装/外壳：TO-220-3 包装：管件 描述：TRANS PNP DARL 100V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Plastic Medium?뭁ower Complementary Silicon Transistors

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Plastic Medium-Power Complementary Silicon Transistors

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Plastic Medium-Power Complementary Silicon Transistors

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DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

POWER TRANSISTORS(10A,80W)

. . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044 = 100 V (Min) – 2N6042, 2N6045 • Collecto

Plastic Medium-Power Complementary Silicon Transistors

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