iscSiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-100V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=-2.0V(Max)@IC=-3A APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications.

封装/外壳：TO-220-3 包装：管件 描述：TRANS PNP DARL 100V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PlasticMedium?뭁owerComplementarySiliconTransistors

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PlasticMedium-PowerComplementarySiliconTransistors

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PlasticMedium-PowerComplementarySiliconTransistors

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COMPLEMENTARYSILICONPOWERTRANSISTORS

Plasticmedium−powercomplementarysilicontransistorsaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •Collector−EmitterSustainingVoltage−@100mAdc− VCEO(sus)=60Vdc(M

POWERTRANSISTORS(10A,80W)

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044 =100V(Min)–2N6042,2N6045 •Collecto

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

DARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. FEATURES: •Collector–EmitterSustainingVoltage- VCEO(sus)=60V(Min)–2N6040,2N6043 =80V(Min)–2N6041,2N6044

NPNSILICONTRANSISTOR

DESCRIPTION TheCENTRALSEMICONDUCTOR2N5294,5296and5298typesaresiliconNPNtransistorsthataremanufacturedbytheepitaxialbaseprocessanddesignedforapplicationsthatrequirepoweramplifierandmediumswitchingcapablilites.

PlasticMedium-PowerComplementarySiliconTransistors

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