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2N591晶体管资料

  • 2N591别名:2N591三极管、2N591晶体管、2N591晶体三极管

  • 2N591生产厂家:CSR_美国电子晶体管公司

  • 2N591制作材料:Ge-PNP

  • 2N591性质:低频或音频放大 (LF)

  • 2N591封装形式:直插封装

  • 2N591极限工作电压:32V

  • 2N591最大电流允许值:0.04A

  • 2N591最大工作频率:<1MHZ或未知

  • 2N591引脚数:3

  • 2N591最大耗散功率:0.05W

  • 2N591放大倍数

  • 2N591图片代号:C-18

  • 2N591vtest:32

  • 2N591htest:999900

  • 2N591atest:0.04

  • 2N591wtest:0.05

  • 2N591代换 2N591用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,

2N591价格

参考价格:¥44.8394

型号:2N5912 品牌:National 备注:这里有2N591多少钱,2026年最近7天走势,今日出价,今日竞价,2N591批发/采购报价,2N591行情走势销售排行榜,2N591报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N591

GERMANIUM PNP TRANSISTORS

文件:2.44311 Mbytes Page:6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

PMP SILICON SWITCHING TRANSISTORS

Small Signal Transistors TO-92 Case (Continued)

CENTRAL

PNP ULTRA HIGH SPEED SATURATED LOGIC SWITCHES

DIFFUSED SILICON PLANAR EPITAXIAL TRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

DIFFETENTIAL PAIRS N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS

DIFFETENTIAL PAIRS N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

INTERSIL

Dual N-Channel JFET High Frequency Amplifier

FEATURES • Tight Tracking • Low Insertion Loss • Good Matching

CALOGIC

Dual N-Channel Silicon Junction Field-Effect Transistor

Dual N-Channel Silicon Junction Field-Effect Transistor ● Wideband Differential Amplifiers

INTERFET

Dual N-Channel JFET High Frequency Amplifier

FEATURES • Tight Tracking • Low Insertion Loss • Good Matching

CALOGIC

Dual N-Channel Silicon Junction Field-Effect Transistor

Dual N-Channel Silicon Junction Field-Effect Transistor ● Wideband Differential Amplifiers

INTERFET

Dual N-Channel JFET High Frequency Amplifier

FEATURES • Tight Tracking • Low Insertion Loss • Good Matching

CALOGIC

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

INTERSIL

DIFFETENTIAL PAIRS N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS

DIFFETENTIAL PAIRS N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Linear Systems replaces discontinued Siliconix & National

Linear Systems replaces discontinued Siliconix & National 2N5912 The 2N5912 are monolithic dual JFETs. The monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching. These devices are an excellent choice for us

MICROSS

High-Power Silicon N-P-N Overlay Transistors

Feafures: Low inductance radial ieads ~ particutariy usefuli for strip-iine circuits s Hermetically sealed ceramic-metal package Electrically isolated mounting stud e6 watts minimum output from 2N5915 amplifier at 470 MHz e7-dB gain from 2N5914 driver at 470 MHz

ETCList of Unclassifed Manufacturers

未分类制造商

High-Power Silicon N-P-N Overlay Transistors

Feafures: Low inductance radial ieads ~ particutariy usefuli for strip-iine circuits s Hermetically sealed ceramic-metal package Electrically isolated mounting stud e6 watts minimum output from 2N5915 amplifier at 470 MHz e7-dB gain from 2N5914 driver at 470 MHz

ETCList of Unclassifed Manufacturers

未分类制造商

Linear Systems replaces discontinued Siliconix & National

文件:280.87 Kbytes Page:1 Pages

MICROSS

JFET Amplifiers

CALOGIC

Small Signal JFETs

SOLITRON

High Frequency Amplifier

文件:41.54 Kbytes Page:2 Pages

CALOGIC

MONOLITHIC DUAL N-CHANNEL JFET

文件:280.87 Kbytes Page:1 Pages

MICROSS

Dual N-Channel JFET High Frequency Amplifier

CALOGIC

封装/外壳:TO-78-6 金属罐 包装:散装 描述:TRANSISTOR DUAL TO78 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 阵列

CENTRAL

High Frequency Amplifier

文件:41.54 Kbytes Page:2 Pages

CALOGIC

MONOLITHIC DUAL N-CHANNEL JFET

文件:280.87 Kbytes Page:1 Pages

MICROSS

Linear Systems replaces discontinued Siliconix & National

文件:281.13 Kbytes Page:1 Pages

MICROSS

MONOLITHIC DUAL N-CHANNEL JFET

文件:281.13 Kbytes Page:1 Pages

MICROSS

SI NPN POWER BJT

文件:89.13 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N591产品属性

  • 类型

    描述

  • Maximum Transition Frequency:

    700(Min)MHz

  • Maximum Power Dissipation:

    310mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Emitter Base Voltage:

    4.5V

  • Maximum DC Collector Current:

    0.05A

  • Maximum Collector Emitter Voltage:

    20V

  • Maximum Collector Emitter Saturation Voltage:

    0.15@1mA@10mA

  • Material:

    Si

  • Configuration:

    Single

  • Category:

    Bipolar Small Signal

更新时间:2026-5-15 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
I
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金封
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全新原装假一赔十
MOT
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只做自己库存 全新原装进口正品假一赔百 可开13%增
MOTOROLA/摩托罗拉
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
MOT
24+
CAN3
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
ROHS
CAN
56520
一级代理 原装正品假一罚十价格优势长期供货
STM
25+
5
公司优势库存 热卖中!
原厂
2540+
CAN3
6852
只做原装正品假一赔十为客户做到零风险!!
ST
25+
CAN to-39
20000
原装,请咨询
Vishay
26+
TO-78
19567
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
Vishay
2002
TO-78
75
原装现货海量库存欢迎咨询

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