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2N5886晶体管资料
2N5886别名：2N5886三极管、2N5886晶体管、2N5886晶体三极管
2N5886生产厂家：美国摩托罗拉半导体公司_ITX_美国晶体管有限公司
2N5886制作材料：Si-NPN
2N5886性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2N5886封装形式：直插封装
2N5886极限工作电压：80V
2N5886最大电流允许值：25A
2N5886最大工作频率：>4MHZ
2N5886引脚数：2
2N5886最大耗散功率：200W
2N5886放大倍数：
2N5886图片代号：E-44
2N5886vtest：80
2N5886htest：4000100
- 2N5886atest：25
2N5886wtest：200
2N5886代换 2N5886用什么型号代替：BD368,BDY29,MJ802,2N5686,2N6274,2SD797,3DK209B,
2N5886价格
参考价格：￥12.4992
型号：2N5886 品牌：SPC 备注：这里有2N5886多少钱，2025年最近7天走势，今日出价，今日竞价，2N5886批发/采购报价，2N5886行情走势销售排行榜，2N5886报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2N5886 | POWERTRANSISTORS(25A,200W) General-PurposePowerAmplifierandSwitchingApplications Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0V(Max)@IC=15A •ExcellentDCCurrentGain− hFE=20~100@IC=10A | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 |  |   |
2N5886 | COMPLEMENTARYSILICONHIGHPOWERTRANSISTORS DESCRIPTION The2N5884and2N5886arecomplementarysiliconpowertransistorinJedecTO-3metalcaseintededforuseinpowerlinearamplifiersandswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES ■HIGHCURRENTCAPABILITY APPLICATION | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | |
2N5886 | PowerTransistors PowerTransistors | ETCList of Unclassifed Manufacturers 未分类制造商 |  | |
2N5886 | ComplementarySiliconHigh?뭁owerTransistors Complementarysiliconhigh−powertransistorsaredesignedforgeneral−purposepoweramplifierandswitchingapplications. Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0Vdc,(max)atIC=15Adc •LowLeakageCurrent ICEX=1.0mAdc(max)atRatedVoltage •Excell | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
2N5886 | SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·Complementtotype2N58832N5884 ·Highpowerdissipations APPLICATIONS ·Theyareintendedforuseinpowerlinearandswitchingapplications | SAVANTIC Savantic, Inc. |  | |
2N5886 | SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·Complementtotype2N58832N5884 APPLICATIONS ·Theyareintendedforuseinpowerlinearandswitchingapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 |  | |
2N5886 | iscSiliconNPNPowerTransistors DESCRIPTION ·DCCurrentGain- :hFE=20(Min)@IC=10A ·LowSaturationVoltage- :VCE(sat)=1.0V(Max)@IC=15A ·ComplementtoType2N5883/5884 APPLICATIONS ·Designedforgeneralpurposepoweramplifierandswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
2N5886 | COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS General-PurposePowerAmplifierandSwitchingApplications Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0V(Max)@IC=15A •ExcellentDCCurrentGain− hFE=20~100@IC=10A | bocaBoca Semiconductor Corporation 博卡博卡半导体公司 |  | |
2N5886 | POWERTRANSISTORSCOMPLEMENTARYSILICON ...designedforgeneral−purposepoweramplifierandswitchingapplications. Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0Vdc,(max)atIC=15Adc •LowLeakageCurrent-ICEX=1.0mAdc(Max) •ExcellentDCCurrentGain−hFE=20(Min)@IC=10Adc | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
2N5886 | iscSiliconNPNPowerTransistors DESCRIPTION ·LowCollectorSaturationVoltage- :VCE(sat)=1.0V(Max.)@IC=15A ·DCCurrentGain- :hFE=20-100@IC=10A ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Designedforgeneral-purposepoweramplifierandswitching applications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
2N5886 | 包装：散装 描述：PNP POWER TRANSISTOR SILICON AMP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 |  | |
2N5886 | SiliconNPNPowerTransistors 文件：114.74 Kbytes Page：3 Pages | SAVANTIC Savantic, Inc. | | |
2N5886 | BipolarNPNDeviceinaHermeticallysealedTO3 文件：15.52 Kbytes Page：1 Pages | SEME-LAB Seme LAB |  | |
ComplementarySiliconHigh?뭁owerTransistors Complementarysiliconhigh−powertransistorsaredesignedforgeneral−purposepoweramplifierandswitchingapplications. Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0Vdc,(max)atIC=15Adc •LowLeakageCurrent ICEX=1.0mAdc(max)atRatedVoltage •Excell | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
封装/外壳：TO-204AA，TO-3 包装：管件 描述：TRANS NPN 80V 25A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
2N5886产品属性
- 类型
描述
- 型号
2N5886
- 功能描述
两极晶体管 - BJT NPN Power Switching
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA/摩托罗拉 |
24+ |
TO-3 |
60000 |
||||
BOCA |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
MOT |
2 |
公司优势库存 热卖中!! |
|||||
MOTOROLA |
20+ |
TO-03 |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
ON/安森美 |
23+ |
TO-204AA |
5032 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
onsemi(安森美) |
24+ |
TO-204 |
977 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
MOTOROLA/摩托罗拉 |
24+ |
TO |
102 |
只做原厂渠道 可追溯货源 |
|||
24+ |
N/A |
46000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
MOTOROLA/摩托罗拉 |
1948+ |
TO |
6852 |
只做原装正品现货!或订货假一赔十! |
2N5886芯片相关品牌
2N5886规格书下载地址
2N5886参数引脚图相关
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2N5886数据表相关新闻
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原装代理
2022-7-232N5245
2N5245，当天发货0755-82732291全新原装现货或门市自取.
2020-8-5
DdatasheetPDF页码索引
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