POWER TRANSISTORS(25A,200W)

General-Purpose Power Amplifier and Switching Applications Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ IC = 15 A • Excellent DC Current Gain − hFE = 20 ~ 100 @ IC = 10 A

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

General-Purpose Power Amplifier and Switching Applications Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ IC = 15 A • Excellent DC Current Gain − hFE = 20 ~ 100 @ IC = 10 A

Power Transistors

Power Transistors

Complementary Silicon High?뭁ower Transistors

Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excell

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type 2N5883 2N5884 ·High power dissipations APPLICATIONS ·They are intended for use in power linear and switching applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Complement to type 2N5883 2N5884 APPLICATIONS ·They are intended for use in power linear and switching applications

isc Silicon NPN Power Transistors

DESCRIPTION ·DC Current Gain- : hFE= 20(Min)@IC= 10A ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A ·Complement to Type 2N5883/5884 APPLICATIONS ·Designed for general purpose power amplifier and switching applications.

POWER TRANSISTORS COMPLEMENTARY SILICON

... designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current - ICEX = 1.0 mAdc (Max) • Excellent DC Current Gain − hFE = 20 (Min) @ IC = 10 Adc

包装：散装 描述：PNP POWER TRANSISTOR SILICON AMP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistors

文件：114.74 Kbytes Page：3 Pages

Silicon NPN Power Transistors

文件：117.26 Kbytes Page：3 Pages

NPN MULTI - EPITAXIAL POWER TRANSISTOR

文件：22.5 Kbytes Page：2 Pages

Complementary Silicon High?뭁ower Transistors

Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excell

Silicon NPN Power Transistors

文件：117.26 Kbytes Page：3 Pages

封装/外壳：TO-204AA，TO-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 25A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个