POWER TRANSISTORS(25A,200W)

General-Purpose Power Amplifier and Switching Applications Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ IC = 15 A • Excellent DC Current Gain − hFE = 20 ~ 100 @ IC = 10 A

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

General-Purpose Power Amplifier and Switching Applications Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ IC = 15 A • Excellent DC Current Gain − hFE = 20 ~ 100 @ IC = 10 A

Power Transistors

Power Transistors

Complementary Silicon High?뭁ower Transistors

Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excell

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N5885 2N5886 APPLICATIONS • They are intended for use in power linear and switching applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N5885 2N5886 • High power dissipations APPLICATIONS • They are intended for use in power linear and switching applications

Supply management

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5883, 2N5885 series types are complementary silicon epitaxial base transistors designed for power amplifier and switching applications.

POWER TRANSISTORS COMPLEMENTARY SILICON

... designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current - ICEX = 1.0 mAdc (Max) • Excellent DC Current Gain − hFE = 20 (Min) @ IC = 10 Adc

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N5885 2N5886 • High power dissipations APPLICATIONS • They are intended for use in power linear and switching applications

SILICON EPITAXIAL PNP TRANSISTOR

文件：195.22 Kbytes Page：3 Pages

包装：卷带（TR） 描述：PNP POWER TRANSISTOR SILICON AMP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon PNP Power Transistors

文件：115.12 Kbytes Page：3 Pages

Silicon PNP Power Transistors

文件：126.19 Kbytes Page：3 Pages

Complementary Silicon High?뭁ower Transistors

Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excell

Silicon PNP Power Transistors

文件：126.19 Kbytes Page：3 Pages

封装/外壳：TO-204AA，TO-3 包装：管件 描述：TRANS PNP 60V 25A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个