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2N5881晶体管资料
2N5881别名：2N5881三极管、2N5881晶体管、2N5881晶体三极管
2N5881生产厂家：美国摩托罗拉半导体公司_ITX_美国晶体管有限公司
2N5881制作材料：Si-NPN
2N5881性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2N5881封装形式：直插封装
2N5881极限工作电压：80V
2N5881最大电流允许值：15A
2N5881最大工作频率：>4MHZ
2N5881引脚数：2
2N5881最大耗散功率：160W
2N5881放大倍数：
2N5881图片代号：E-44
2N5881vtest：80
2N5881htest：4000100
- 2N5881atest：15
2N5881wtest：160
2N5881代换 2N5881用什么型号代替：BD315,BD745A,BDW51A,2N5302,2N5685,2N5620,2N5621,2N5622,2N5623,2N5624,2N5625,2N5626,2N5627,2N5628,2N5629,2N5630,2N5631,3CDA74A,
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2N5881 | POWER TRANSISTORS(15A,160W) General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A | MOSPEC 统懋 |   | |
2N5881 | COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A | boca 博卡 | | |
2N5881 | Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
2N5881 | Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications | SAVANTIC | | |
2N5881 | Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications | JMNIC 锦美电子 | | |
2N5881 | Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications | ISC 无锡固电 | | |
2N5881 | COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ... designed for general-purpose power amplifier and switching applications. ● Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc(Min) - 2N5879, 2N5881 = 60 Vdc(Min) - 2N5880, 2N5882 ● DC Current Gain - hFE = 20 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
2N5881 | Silicon NPN Power Transistors 文件：118.24 Kbytes Page：3 Pages | JMNIC 锦美电子 | | |
2N5881 | Silicon NPN Power Transistors 文件：114.32 Kbytes Page：3 Pages | SAVANTIC | | |
2N5881 | Bipolar NPN Device in a Hermetically sealed TO3 文件：15.52 Kbytes Page：1 Pages | SEME-LAB Seme LAB | | |
2N5881 | 包装：卷带（TR） 描述：TRANS NPN 60V 15A 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Microchip 微芯科技 | | |
Silicon NPN Power Transistors 文件：118.24 Kbytes Page：3 Pages | JMNIC 锦美电子 | |
2N5881产品属性
- 类型
描述
- 型号
2N5881
- 制造商
Microsemi Corporation
- 功能描述
TRANS GP BJT NPN 60V 15A 3PIN TO-3 - Bulk
- 制造商
Motorola Inc
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA/摩托罗拉 |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
MOT |
8639+/8821+ |
TO-3 |
300 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MOTOROLA |
23+ |
2 |
5000 |
专注配单,只做原装进口现货 |
|||
MOTO |
23+ |
NA |
557 |
专做原装正品,假一罚百! |
|||
MOT |
24+ |
TO-3 |
10000 |
||||
2N5881 |
73 |
73 |
|||||
ON |
1738+ |
TO-3 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
TI |
新 |
313 |
全新原装 货期两周 |
||||
ON/安森美 |
23+ |
TO-3 |
28888 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
MOT/RCA |
2023+ |
TO-3 |
50000 |
原装现货 |
2N5881规格书下载地址
2N5881参数引脚图相关
- 5000
- 4921
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- 47471
- 4735
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- 4536
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- 3579
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- 2N5887
- 2N5886G
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- 2N5885G
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- 2N5884G
- 2N5884
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- 2N5865
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- 2N5862
- 2N5861
- 2N586
- 2N5859
- 2N5854
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2N5881数据表相关新闻
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原装代理
2022-7-232N5245
2N5245，当天发货0755-82732291全新原装现货或门市自取.
2020-8-5
DdatasheetPDF页码索引
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