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2N5881晶体管资料

  • 2N5881别名:2N5881三极管、2N5881晶体管、2N5881晶体三极管

  • 2N5881生产厂家:美国摩托罗拉半导体公司_ITX_美国晶体管有限公司

  • 2N5881制作材料:Si-NPN

  • 2N5881性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2N5881封装形式:直插封装

  • 2N5881极限工作电压:80V

  • 2N5881最大电流允许值:15A

  • 2N5881最大工作频率:>4MHZ

  • 2N5881引脚数:2

  • 2N5881最大耗散功率:160W

  • 2N5881放大倍数

  • 2N5881图片代号:E-44

  • 2N5881vtest:80

  • 2N5881htest:4000100

  • 2N5881atest:15

  • 2N5881wtest:160

  • 2N5881代换 2N5881用什么型号代替:BD315,BD745A,BDW51A,2N5302,2N5685,2N5620,2N5621,2N5622,2N5623,2N5624,2N5625,2N5626,2N5627,2N5628,2N5629,2N5630,2N5631,3CDA74A,

型号 功能描述 生产厂家 企业 LOGO 操作
2N5881

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A

BOCA

博卡

2N5881

POWER TRANSISTORS(15A,160W)

General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A

MOSPEC

统懋

2N5881

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

2N5881

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications

ISC

无锡固电

2N5881

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications

JMNIC

锦美电子

2N5881

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ... designed for general-purpose power amplifier and switching applications. ● Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc(Min) - 2N5879, 2N5881 = 60 Vdc(Min) - 2N5880, 2N5882 ● DC Current Gain - hFE = 20

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N5881

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5879 2N5880 APPLICATIONS • For general-purpose power amplifier and switching applications

SAVANTIC

2N5881

160W NPN Complementary BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

DIGITRON

2N5881

三极管

MOSPEC

统懋

2N5881

Bipolar Junction Transistors

TTELEC

2N5881

Silicon NPN Power Transistors

文件:114.32 Kbytes Page:3 Pages

SAVANTIC

2N5881

Bipolar NPN Device in a Hermetically sealed TO3

文件:15.52 Kbytes Page:1 Pages

SEME-LAB

2N5881

包装:卷带(TR) 描述:TRANS NPN 60V 15A 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

2N5881

Silicon NPN Power Transistors

文件:118.24 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:118.24 Kbytes Page:3 Pages

JMNIC

锦美电子

2N5881产品属性

  • 类型

    描述

  • VCBO (V):

    60

  • VCEO (V):

    60

  • PD (W):

    160

  • PACKAGE:

    TO-3

  • NPN:

    2N5881

  • PNP:

    2N5879

  • HFE (Min/Max):

    20/100

  • IC/VCE (A/V):

    6.0/4.0

  • VCE(SAT) (V):

    1.0

  • IC / IB (A/mA):

    7.0/700

更新时间:2026-5-15 16:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
2N5881
25+
73
73
MOT
22+
TO-3
20000
公司只有原装 品质保证
MOTOROLA/摩托罗拉
2450+
TO-2
6540
原装现货或订发货1-2周
ON
22+
TO-220-3
50000
原装正品假一罚十,代理渠道价格优
ONSEMI/安森美
26+
NA
43600
全新原装现货,假一赔十
MOT/RCA
2023+
TO-3
50000
原装现货
MOT
23+
TO-3
8650
受权代理!全新原装现货特价热卖!
onsemi(安森美)
25+
TO-204-2
20948
样件支持,可原厂排单订货!
onsemi(安森美)
25+
TO-204-2
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
三年内
1983
只做原装正品

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