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2N5811晶体管资料

  • 2N5811别名:2N5811三极管、2N5811晶体管、2N5811晶体三极管

  • 2N5811生产厂家:美国通用电器公司_SEM_美国史普拉各电气公司

  • 2N5811制作材料:Si-PNP

  • 2N5811性质:低频或音频放大 (LF)_TR

  • 2N5811封装形式:直插封装

  • 2N5811极限工作电压:35V

  • 2N5811最大电流允许值:0.75A

  • 2N5811最大工作频率:>100MHZ

  • 2N5811引脚数:3

  • 2N5811最大耗散功率:0.5W

  • 2N5811放大倍数:β>60

  • 2N5811图片代号:A-23

  • 2N5811vtest:35

  • 2N5811htest:100000100

  • 2N5811atest:0.75

  • 2N5811wtest:0.5

  • 2N5811代换 2N5811用什么型号代替:BC297,BC327,BC328,BC636,BC638,BC640,BC728,3CK10D,

型号 功能描述 生产厂家 企业 LOGO 操作
2N5811

Small Signal Transistors TO-92 Case (Continued)

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4400 and 2N4401 are silicon NPN transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N4402 and 2N4403. MARKING: FULL PART NUMBER

CENTRAL

2N5811

COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTOR

COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTOR

MICRO-ELECTRONICS

2N5811

SERIES 2N TRANSISTORS

SERIES 2N TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N5811

Trans GP BJT PNP 25V

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N5811产品属性

  • 类型

    描述

  • Maximum Transition Frequency:

    100(Min)MHz

  • Maximum Power Dissipation:

    500mW

  • Maximum Emitter Base Voltage:

    5V

  • Maximum Collector Emitter Voltage:

    25V

  • Maximum Collector Emitter Saturation Voltage:

    0.75@500mAV

  • Maximum Collector Base Voltage:

    35V

  • Configuration:

    Single

  • Category:

    Bipolar Small Signal

2N5811数据表相关新闻