2N573晶体管资料

  • 2N573别名:2N573三极管、2N573晶体管、2N573晶体三极管

  • 2N573生产厂家:CSR_美国电子晶体管公司_IDI

  • 2N573制作材料:Ge-PNP

  • 2N573性质:低频或音频放大 (LF)_开关管 (S)

  • 2N573封装形式:直插封装

  • 2N573极限工作电压:40V

  • 2N573最大电流允许值:0.25A

  • 2N573最大工作频率:<1MHZ或未知

  • 2N573引脚数:3

  • 2N573最大耗散功率:0.2W

  • 2N573放大倍数:β=200

  • 2N573图片代号:D-9

  • 2N573vtest:40

  • 2N573htest:999900

  • 2N573atest:0.25

  • 2N573wtest:0.2

  • 2N573代换 2N573用什么型号代替:AC122,AC125,AC126,AC126,AC151,2N1191,2N1192,2N1193,2N1194,2SB56A,3AK34A,

型号 功能描述 生产厂家 企业 LOGO 操作

COLLECTOR CURRENT = 10 AMPS NPN TYPES

[API ELECTRONICS, INC.] COLLECTOR CURRENT = 10 AMPS NPN TYPES

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High current capability APPLICATIONS • For linear amplifier and inductive switching applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High current capability APPLICATIONS • For linear amplifier and inductive switching applications

SAVANTIC

Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • High DC Current Gain-hFE=30-300(Min)@lc = 5A • Low Saturation Voltage- : VCE(sat)= 1.2V(Max)@ |c = 10A APPLICATIONS • Designed for linear amplifiers, series pass regulators, and inductive switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • High DC Current Gain-hFE=30-300(Min)@IC = 10A • Low Saturation Voltage- : VCE(sat)= 1.2V(Max)@ IC = 20A APPLICATIONS • Designed for linear amplifiers, series pass regulators, and inductive switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High current capability APPLICATIONS • For linear amplifier and inductive switching applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • High current capability APPLICATIONS • For linear amplifier and inductive switching applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage APPLICATIONS • For general–purpose switching and power amplifier applications.

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min.) • Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A • Wide Area of Safe Operation APPLICATIONS • Designed for general-purpose power amplifier and switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min.) • Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A • Wide Area of Safe Operation APPLICATIONS • Designed for general-purpose power amplifier and switching applications.

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min.) • Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A • Wide Area of Safe Operation APPLICATIONS • Designed for general-purpose power amplifier and switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage APPLICATIONS • For general–purpose switching and power amplifier applications.

SAVANTIC

isc Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min.) • Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A • Wide Area of Safe Operation APPLICATIONS • Designed for general-purpose power amplifier and switching applications.

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Low collector saturation voltage APPLICATIONS • For general–purpose switching and power amplifier applications.

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min.) • Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A • Wide Area of Safe Operation APPLICATIONS • Designed for general-purpose power amplifier and switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min.) • Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max.)@ IC= -5A • Wide Area of Safe Operation APPLICATIONS • Designed for general-purpose power amplifier and switching applications.

ISC

无锡固电

封装/外壳:TO-211MA,TO-210AC,TO-61-4,接线柱 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Microchip

微芯科技

Trans GP BJT NPN 80V 20A 3-Pin TO-61

NJS

Trans GP BJT NPN 80V 20A 3-Pin(2+Tab) TO-3

NJS

Silicon NPN Power Transistors

文件:110.38 Kbytes Page:3 Pages

SAVANTIC

封装/外壳:TO-204AA,TO-3 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Microchip

微芯科技

Silicon NPN Power Transistors

文件:110.56 Kbytes Page:3 Pages

SAVANTIC

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

文件:14.7 Kbytes Page:1 Pages

SEME-LAB

Trans GP BJT NPN 80V 30A 3-Pin(2+Tab) TO-3

NJS

Silicon PNP Power Transistors

文件:113.74 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:113.74 Kbytes Page:3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件:117.52 Kbytes Page:3 Pages

SAVANTIC

2N573产品属性

  • 类型

    描述

  • 型号

    2N573

  • 制造商

    Microsemi Corporation

  • 功能描述

    TRANS GP BJT NPN 80V 10A 3PIN TO-59 - Bulk

更新时间:2025-11-1 18:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
S
98+
CAN2
4
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MICROSEMI/美高森美
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
CHINA
23+
TO-3
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
MOTOROLA/摩托罗拉
2023+
MODULE
200
主打螺丝模块系列
HONEYWELL
1
全新原装 货期两周
24+
TO-3
10000
全新
MOTOROLA
专业铁帽
CAN3
1200
原装铁帽专营,代理渠道量大可订货
MOTOROLA
24+
CAN3
1200
原装现货假一罚十
S
23+
CAN2
50000
全新原装正品现货,支持订货
24+
N/A
79000
一级代理-主营优势-实惠价格-不悔选择

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