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2N561晶体管资料

2N561别名：2N561三极管、2N561晶体管、2N561晶体三极管
2N561生产厂家：CSR_美国电子晶体管公司_美国硅晶体技术公司
2N561制作材料：Ge-PNP
2N561性质：低频或音频放大（LF）_开关管（S）_功率放大（L
2N561封装形式：直插封装
2N561极限工作电压：80V
2N561最大电流允许值：5A
2N561最大工作频率：<1MHZ或未知
2N561引脚数：2
2N561最大耗散功率：50W
2N561放大倍数：
2N561图片代号：E-44
2N561vtest：80
2N561htest：999900
2N561atest：5
2N561wtest：50

2N561代换 2N561用什么型号代替：AL102,AL103,AUY21,AUY22,2N1546,2N1547,2N1548,2N1551,2N2870,3AD51C,

2N561价格

参考价格：￥0.0000

型号：2N5614 品牌：All American 备注：这里有2N561多少钱，2025年最近7天走势，今日出价，今日竞价，2N561批发/采购报价，2N561行情走势销售排行榜，2N561报价。

型号	功能描述	生产厂家&企业	LOGO
2N5610	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier; and switching applications	JMNIC 锦美电子	JMNIC
2N5610	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier; and switching applications	SAVANTIC	SAVANTIC
2N5610	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier; and switching applications	ISC 无锡固电	ISC
2N5610	Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 70-200@IC= 2.5A • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) • Complement to Type 2N5609 APPLICATIONS • Designed for use in high frequency power amplifiers, audio power amplifier and drivers.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
2N5611	DC Current Gain- 7.5 AMPERE POWER TRANSISTOR PNP SILICON - 2N5613 SILICON PNP TRANSISTOR (5 Amp) - 2N5611	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
2N5611	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	ISC 无锡固电	ISC
2N5611	isc Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	ISC 无锡固电	ISC
2N5611	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	JMNIC 锦美电子	JMNIC
2N5611	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	SAVANTIC	SAVANTIC
2N5611A	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	ISC 无锡固电	ISC
2N5611A	Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	SAVANTIC	SAVANTIC
2N5612	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier; and switching applications	JMNIC 锦美电子	JMNIC
2N5612	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier; and switching applications	SAVANTIC	SAVANTIC
2N5612	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier; and switching applications	ISC 无锡固电	ISC
2N5612	Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 30-90@IC= 2.5A • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) • Complement to Type 2N5611 APPLICATIONS • Designed for use in high frequency power amplifiers, audio power amplifier and drivers.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
2N5612A	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	ISC 无锡固电	ISC
2N5612A	Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	SAVANTIC	SAVANTIC
2N5613	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	SAVANTIC	SAVANTIC
2N5613	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	ISC 无锡固电	ISC
2N5613	POWER TRANSISTOR 7.5 AMPERE POWER TRANSISTOR PNP SILICON - 2N5613 SILICON PNP TRANSISTOR (5 Amp) - 2N5611	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
2N5614	Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 70-200@IC= 2.5A • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) • Complement to Type 2N5613 APPLICATIONS • Designed for use in high frequency power amplifiers, audio power amplifier and drivers.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
2N5614	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	ISC 无锡固电	ISC
2N5614	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	SAVANTIC	SAVANTIC
2N5615	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	SAVANTIC	SAVANTIC
2N5615	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	ISC 无锡固电	ISC
2N5615	Silicon PNP Power Transistors DESCRIPTION • DC Current Gain- : hFE= 30-90@lc= -2.5A • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage- : VCEO(Sus)= -SOV(Min) • Complement to Type 2N5616 APPLICATIONS • Designed for use in high frequency power amplifiers, audio power amplifier and drivers.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
2N5616	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	SAVANTIC	SAVANTIC
2N5616	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	ISC 无锡固电	ISC
2N5617	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	ISC 无锡固电	ISC
2N5617	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	SAVANTIC	SAVANTIC
2N5617	Silicon PNP Power Transistors DESCRIPTION • DC Current Gain- : hFE= 70-200@lc= -2.5A • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage- : VCEO(sus)= -SOV(Min) • Complement to Type 2N5618 APPLICATIONS • Designed for use in high frequency power amplifiers, audio power amplifier and drivers.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
2N5618	Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 70-200@IC= 2.5A • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) • Complement to Type 2N5617 APPLICATIONS • Designed for use in high frequency power amplifiers, audio power amplifier and drivers.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
2N5618	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	ISC 无锡固电	ISC
2N5618	Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	SAVANTIC	SAVANTIC
2N5619	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	ISC 无锡固电	ISC
2N5619	Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications	SAVANTIC	SAVANTIC
2N5619	Silicon PNP Power Transistors DESCRIPTION • DC Current Gain- : hFE= 30-90@lc= -2.5A • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage- : VCEo(sus)=-100V(Min) • Complement to Type 2N5620 APPLICATIONS • Designed for use in high frequency power amplifiers, audio power amplifier and drivers.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
2N5610	Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. 文件：15.27 Kbytes Page：1 Pages	SEME-LAB Seme LAB	SEME-LAB
2N5610	Silicon NPN Power Transistors 文件：116.13 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2N5611	Silicon PNP Power Transistors 文件：116.26 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2N5611	Bipolar PNP Device in a Hermetically sealed to66 Metal Package. 文件：11.92 Kbytes Page：1 Pages	SEME-LAB Seme LAB	SEME-LAB
2N5611	封装/外壳：TO-213AA，TO-66-2 包装：散装描述：POWER BJT 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	Microchip 微芯科技	Microchip
2N5611A	Silicon PNP Power Transistors 文件：113.52 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2N5611A	Bipolar PNP Device in a Hermetically sealed TO66 文件：16.1 Kbytes Page：1 Pages	SEME-LAB Seme LAB	SEME-LAB
2N5612	Bipolar NPN Device in a Hermetically sealed TO66 文件：16.09 Kbytes Page：1 Pages	SEME-LAB Seme LAB	SEME-LAB
2N5612	Silicon NPN Power Transistors 文件：116.13 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2N5612	封装/外壳：TO-213AA，TO-66-2 包装：散装描述：POWER BJT 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	Microchip 微芯科技	Microchip
2N5612A	Silicon NPN Power Transistors 文件：113.51 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2N5612A	Bipolar NPN Device in a Hermetically sealed TO66 文件：16.09 Kbytes Page：1 Pages	SEME-LAB Seme LAB	SEME-LAB
2N5613	Bipolar PNP Device 文件：11.29 Kbytes Page：1 Pages	SEME-LAB Seme LAB	SEME-LAB
2N5613	Silicon PNP Power Transistors 文件：112.94 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2N5614	Silicon NPN Power Transistors 文件：113.56 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2N5615	Silicon PNP Power Transistors 文件：112.94 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2N5615	Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 文件：14.38 Kbytes Page：1 Pages	SEME-LAB Seme LAB	SEME-LAB
2N5616	Silicon NPN Power Transistors 文件：113.56 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2N5616	Silicon NPN Power Transistors 文件：71.45 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
2N5617	Silicon PNP Power Transistors 文件：112.94 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2N5617	Bipolar PNP Device in a Hermetically sealed TO3 Metal Package 文件：11.29 Kbytes Page：1 Pages	SEME-LAB Seme LAB	SEME-LAB
2N5618	Bipolar NPN Device in a Hermetically sealed 文件：14.7 Kbytes Page：1 Pages	SEME-LAB Seme LAB	SEME-LAB
2N5618	Silicon NPN Power Transistors 文件：113.56 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC

2N561产品属性

类型
描述
型号
2N561
功能描述
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-3

2N561供应商更多...

更新时间：2025-8-18 11:06:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
现代芯城（深圳）科技有限公司	2N5614		24+	N/A	69000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市一线半导体有限公司	2N5614	MOT	24+	TO-3	10000		询价
深圳市昊创电子有限公司	2N561A	MOTOROLA	专业铁帽	CAN3	1200	原装铁帽专营,代理渠道量大可订货	询价
深圳市科恒伟业电子有限公司	2N5614		1738+	TO-3	8529	科恒伟业!只做原装正品,假一赔十!	询价
贸泽芯城（深圳）电子科技有限公司	2N5616		23+	TO-3	28888	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市宏捷佳电子科技有限公司	2N5614	Microchip Technology	25+	TO-204AA TO-3	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市永贝尔科技有限公司	2N5614	ISC	23+	NA	19960	只做进口原装,终端工厂免费送样	询价
中天科工半导体（深圳）有限公司	2N561A	MOTOROLA/摩托罗拉	专业铁帽	CAN3	67500	铁帽原装主营-可开原型号增税票	询价
深圳市弘为电子有限公司	2N561A	MOTOROLA	24+	CAN3	1200	原装现货假一罚十	询价

2N561芯片相关品牌

2N561规格书下载地址

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2N561数据表相关新闻

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原装代理
2022-7-23
2N5245
2N5245，当天发货0755-82732291全新原装现货或门市自取.
2020-8-5

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2N561晶体管资料

2N561价格

2N561产品属性

2N561供应商更多...

2N561芯片相关品牌

2N561规格书下载地址

2N561参数引脚图相关

2N561数据表相关新闻

2N6027RLRAG坚持只做原装货

2N5192G原包原标原装现货

2N60G-TO220FT-A-TG_UTC代理商

2N5401L-SOT89R-B-TG_UTC代理商

2N6043G

2N5245

DdatasheetPDF页码索引