位置:首页 > IC中文资料第5659页 > 2N560
2N560晶体管资料
- 2N560别名:2N560三极管、2N560晶体管、2N560晶体三极管 
- 2N560生产厂家:CSR_IDI_SCA 
- 2N560制作材料:Si-NPN 
- 2N560性质:低频或音频放大 (LF)_开关管 (S) 
- 2N560封装形式:直插封装 
- 2N560极限工作电压:60V 
- 2N560最大电流允许值:0.1A 
- 2N560最大工作频率:<1MHZ或未知 
- 2N560引脚数:3 
- 2N560最大耗散功率:0.5W 
- 2N560放大倍数: 
- 2N560图片代号:C-40 
- 2N560vtest:60 
- 2N560htest:999900 
- 2N560atest:0.1
- 2N560wtest:0.5 
- 2N560代换 2N560用什么型号代替:BC140,BC302,2N3722,2N3723,2N3725,2N4238,2N5321,2SC1385,2BX81B, 
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 | 
|---|---|---|---|---|
| Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers. | ISC 无锡固电 | |||
| Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers. | JMNIC 锦美电子 | |||
| Silicon NPN Power Transistors DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -0.75V(Max.)@ IC= -4A • DC Current Gain- : hFE= 20-80 @IC= -4A APPLICATIONS • Designed for general purpose use in power amplifier and switching circuits. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
| Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers. | SAVANTIC | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector-emitter saturation voltage APPLICATIONS • For high frequency power amplifier ; audio power amplifier and drivers. | SAVANTIC | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector-emitter saturation voltage APPLICATIONS • For high frequency power amplifier ; audio power amplifier and drivers. | JMNIC 锦美电子 | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector-emitter saturation voltage APPLICATIONS • For high frequency power amplifier ; audio power amplifier and drivers. | ISC 无锡固电 | |||
| Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers. | ISC 无锡固电 | |||
| Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers. | JMNIC 锦美电子 | |||
| Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers. | SAVANTIC | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector-emitter saturation voltage APPLICATIONS • For high frequency power amplifier ; audio power amplifier and drivers. | SAVANTIC | |||
| Silicon PNP Power Transistors DESCRIPTION • DC Current Gain- : hFE= 30-90@lc= -1 • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage- : VCEO(susr-100V(Mm) • Complement to Type 2N5604 APPLICATIONS • Designed for use in high frequency power amplifiers, audio power amplifier and drivers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector-emitter saturation voltage APPLICATIONS • For high frequency power amplifier ; audio power amplifier and drivers. | JMNIC 锦美电子 | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector-emitter saturation voltage APPLICATIONS • For high frequency power amplifier ; audio power amplifier and drivers. | ISC 无锡固电 | |||
| Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers. | JMNIC 锦美电子 | |||
| Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers. | ISC 无锡固电 | |||
| Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 30-90@IC= 1A • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) • Complement to Type 2N5603 APPLICATIONS • Designed for use in high frequency power amplifiers, audio power amplifier and drivers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
| Silicon NPN Power Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers. | SAVANTIC | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications | SAVANTIC | |||
| Silicon PNP Power Transistors DESCRIPTION • DC Current Gain- : hFE= 70-200@IC= -2.5A • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) • Complement to Type 2N5606 APPLICATIONS • Designed for use in high frequency power amplifiers, audio power amplifier and drivers. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications | JMNIC 锦美电子 | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications | ISC 无锡固电 | |||
| Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier; and switching applications | ISC 无锡固电 | |||
| Silicon NPN Power Transistors DESCRIPTION • DC Current Gain- : hFE= 70-200@IC= 2.5A • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) • Complement to Type 2N5605 APPLICATIONS • Designed for use in high frequency power amplifiers, audio power amplifier and drivers | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
| Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier; and switching applications | JMNIC 锦美电子 | |||
| Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier; and switching applications | SAVANTIC | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications | SAVANTIC | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications | ISC 无锡固电 | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications | JMNIC 锦美电子 | |||
| COMPLEMENTARY SILICON POWER TRANSITORS 
 | Central | |||
| COMPLEMENTARY SILICON POWER TRANSITORS 
 | Central | |||
| Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier; and switching applications | JMNIC 锦美电子 | |||
| Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier; and switching applications | ISC 无锡固电 | |||
| Silicon NPN Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier; and switching applications | SAVANTIC | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications | SAVANTIC | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications | JMNIC 锦美电子 | |||
| COMPLEMENTARY SILICON POWER TRANSITORS 
 | Central | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications | ISC 无锡固电 | |||
| Silicon NPN Power Transistors 文件:116.64 Kbytes Page:3 Pages | SAVANTIC | |||
| Bipolar PNP Device in a Hermetically sealed TO66 Metal Package 文件:11.91 Kbytes Page:1 Pages | SEME-LAB | |||
| Silicon PNP Power Transistors 文件:116.61 Kbytes Page:3 Pages | SAVANTIC | |||
| Bipolar PNP Device in a Hermetically sealed TO66 Metal Package 文件:10.97 Kbytes Page:1 Pages | SEME-LAB | |||
| 封装/外壳:TO-213AA,TO-66-2 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | Microchip 微芯科技 | |||
| Silicon PNP Power Transistors 文件:126.74 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
| Silicon NPN Power Transistors 文件:116.64 Kbytes Page:3 Pages | SAVANTIC | |||
| Silicon NPN Power Transistors 文件:126.65 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
| 封装/外壳:TO-213AA,TO-66-2 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | Microchip 微芯科技 | |||
| Bipolar NPN Device in a Hermetically sealed TO66 Metal Package 文件:14.35 Kbytes Page:1 Pages | SEME-LAB | |||
| Bipolar Junction Transistors | TTELEC | |||
| Bipolar Junction Transistors | TTELEC | |||
| Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. 文件:10.95 Kbytes Page:1 Pages | SEME-LAB | |||
| Silicon PNP Power Transistors 文件:116.61 Kbytes Page:3 Pages | SAVANTIC | |||
| Silicon NPN Power Transistors 文件:116.64 Kbytes Page:3 Pages | SAVANTIC | |||
| Bipolar Junction Transistors | TTELEC | |||
| Bipolar NPN Device in a Hermetically sealed TO66 Metal Package 文件:14.47 Kbytes Page:1 Pages | SEME-LAB | |||
| Silicon PNP Power Transistors 文件:116.26 Kbytes Page:3 Pages | SAVANTIC | |||
| Bipolar PNP Device in a Hermetically sealed TO66 Metal Package 文件:10.95 Kbytes Page:1 Pages | SEME-LAB | |||
| Silicon PNP Power Transistors 文件:131.77 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
| Silicon PNP Power Transistors 文件:131.77 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
| Silicon PNP Power Transistors 文件:131.77 Kbytes Page:3 Pages | JMNIC 锦美电子 | 
2N560产品属性
- 类型描述 
- 型号2N560 
- 功能描述TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-29 
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 | 
|---|---|---|---|---|---|---|---|
| RENESAS | 25+ | TO-92L | 300000 | 百分百原装正品 真实公司现货库存 本公司只做原装 可 | |||
| 24+ | N/A | 52000 | 一级代理-主营优势-实惠价格-不悔选择 | ||||
| MOTOROLA/摩托罗拉 | 专业铁帽 | CAN3 | 67500 | 铁帽原装主营-可开原型号增税票 | |||
| MOT | 2023+ | TO-66 | 58000 | 进口原装,现货热卖 | |||
| MOTOROLA | 24+ | CAN3 | 1200 | 原装现货假一罚十 | |||
| NJS | 24+ | NA/ | 3376 | 原装现货,当天可交货,原型号开票 | |||
| Microchip Technology | 25+ | TO-213AA TO-66-2 | 9350 | 独立分销商 公司只做原装 诚心经营 免费试样正品保证 | |||
| MOTOROLA/摩托罗拉 | 23+ | CAN3 | 5000 | 原厂授权代理,海外优势订货渠道。可提供大量库存,详 | |||
| 24+ | TO-66 | 10000 | 全新 | ||||
| MOTOROLA | 专业铁帽 | CAN3 | 1000 | 原装铁帽专营,代理渠道量大可订货 | 
2N560芯片相关品牌
2N560规格书下载地址
2N560参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2N5618
- 2N5617
- 2N5616
- 2N5615
- 2N5614
- 2N5613
- 2N5612A
- 2N5612
- 2N5611A
- 2N5611
- 2N5610
- 2N561
- 2N5609
- 2N5608
- 2N5607
- 2N5606
- 2N5605
- 2N5604
- 2N5603
- 2N5602
- 2N5601
- 2N5600
- 2N56
- 2N5599
- 2N5598
- 2N5597
- 2N5596
- 2N5595
- 2N5591
- 2N5590
- 2N559
- 2N5589
- 2N5588
- 2N5587
- 2N5584
- 2N5583
- 2N5582
- 2N5581
- 2N5580
- 2N558
- 2N5579
- 2N5578
- 2N5575
- 2N5574
- 2N5573
- 2N5572
- 2N5571
- 2N5570
- 2N5569
- 2N5568
- 2N5567
- 2N5566
2N560数据表相关新闻
- 2N6027RLRAG坚持只做原装货- 2N6027RLRAG坚持只做原装货 2024-9-19
- 2N5192G原包原标原装现货- 2N5192G原包原标原装现货 2023-5-11
- 2N60G-TO220FT-A-TG_UTC代理商- 2N60G-TO220FT-A-TG_UTC代理商 2023-3-7
- 2N5401L-SOT89R-B-TG_UTC代理商- 2N5401L-SOT89R-B-TG_UTC代理商 2023-2-10
- 2N6043G- 原装代理 2022-7-23
- 2N5245- 2N5245,当天发货0755-82732291全新原装现货或门市自取. 2020-8-5
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106



