2N560晶体管资料

  • 2N560别名:2N560三极管、2N560晶体管、2N560晶体三极管

  • 2N560生产厂家:CSR_IDI_SCA

  • 2N560制作材料:Si-NPN

  • 2N560性质:低频或音频放大 (LF)_开关管 (S)

  • 2N560封装形式:直插封装

  • 2N560极限工作电压:60V

  • 2N560最大电流允许值:0.1A

  • 2N560最大工作频率:<1MHZ或未知

  • 2N560引脚数:3

  • 2N560最大耗散功率:0.5W

  • 2N560放大倍数

  • 2N560图片代号:C-40

  • 2N560vtest:60

  • 2N560htest:999900

  • 2N560atest:0.1

  • 2N560wtest:0.5

  • 2N560代换 2N560用什么型号代替:BC140,BC302,2N3722,2N3723,2N3725,2N4238,2N5321,2SC1385,2BX81B,

型号 功能描述 生产厂家 企业 LOGO 操作

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -0.75V(Max.)@ IC= -4A • DC Current Gain- : hFE= 20-80 @IC= -4A APPLICATIONS • Designed for general purpose use in power amplifier and switching circuits.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector-emitter saturation voltage APPLICATIONS • For high frequency power amplifier ; audio power amplifier and drivers.

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector-emitter saturation voltage APPLICATIONS • For high frequency power amplifier ; audio power amplifier and drivers.

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector-emitter saturation voltage APPLICATIONS • For high frequency power amplifier ; audio power amplifier and drivers.

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.

JMNIC

锦美电子

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector-emitter saturation voltage APPLICATIONS • For high frequency power amplifier ; audio power amplifier and drivers.

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • DC Current Gain- : hFE= 30-90@lc= -1 • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage- : VCEO(susr-100V(Mm) • Complement to Type 2N5604 APPLICATIONS • Designed for use in high frequency power amplifiers, audio power amplifier and drivers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector-emitter saturation voltage APPLICATIONS • For high frequency power amplifier ; audio power amplifier and drivers.

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector-emitter saturation voltage APPLICATIONS • For high frequency power amplifier ; audio power amplifier and drivers.

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.

JMNIC

锦美电子

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • DC Current Gain- : hFE= 30-90@IC= 1A • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) • Complement to Type 2N5603 APPLICATIONS • Designed for use in high frequency power amplifiers, audio power amplifier and drivers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • DC Current Gain- : hFE= 70-200@IC= -2.5A • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) • Complement to Type 2N5606 APPLICATIONS • Designed for use in high frequency power amplifiers, audio power amplifier and drivers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier; and switching applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • DC Current Gain- : hFE= 70-200@IC= 2.5A • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) • Complement to Type 2N5605 APPLICATIONS • Designed for use in high frequency power amplifiers, audio power amplifier and drivers

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier; and switching applications

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier; and switching applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications

JMNIC

锦美电子

COMPLEMENTARY SILICON POWER TRANSITORS

Central

COMPLEMENTARY SILICON POWER TRANSITORS

Central

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier; and switching applications

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier; and switching applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier; and switching applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications

JMNIC

锦美电子

COMPLEMENTARY SILICON POWER TRANSITORS

Central

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For general-purpose amplifier ; and switching applications

ISC

无锡固电

Silicon NPN Power Transistors

文件:116.64 Kbytes Page:3 Pages

SAVANTIC

Bipolar PNP Device in a Hermetically sealed TO66 Metal Package

文件:11.91 Kbytes Page:1 Pages

SEME-LAB

Silicon PNP Power Transistors

文件:116.61 Kbytes Page:3 Pages

SAVANTIC

Bipolar PNP Device in a Hermetically sealed TO66 Metal Package

文件:10.97 Kbytes Page:1 Pages

SEME-LAB

封装/外壳:TO-213AA,TO-66-2 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Microchip

微芯科技

Silicon PNP Power Transistors

文件:126.74 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

文件:116.64 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:126.65 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

封装/外壳:TO-213AA,TO-66-2 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Microchip

微芯科技

Bipolar NPN Device in a Hermetically sealed TO66 Metal Package

文件:14.35 Kbytes Page:1 Pages

SEME-LAB

Bipolar Junction Transistors

TTELEC

Bipolar Junction Transistors

TTELEC

Bipolar PNP Device in a Hermetically sealed TO66 Metal Package.

文件:10.95 Kbytes Page:1 Pages

SEME-LAB

Silicon PNP Power Transistors

文件:116.61 Kbytes Page:3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件:116.64 Kbytes Page:3 Pages

SAVANTIC

Bipolar Junction Transistors

TTELEC

Bipolar NPN Device in a Hermetically sealed TO66 Metal Package

文件:14.47 Kbytes Page:1 Pages

SEME-LAB

Silicon PNP Power Transistors

文件:116.26 Kbytes Page:3 Pages

SAVANTIC

Bipolar PNP Device in a Hermetically sealed TO66 Metal Package

文件:10.95 Kbytes Page:1 Pages

SEME-LAB

Silicon PNP Power Transistors

文件:131.77 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:131.77 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon PNP Power Transistors

文件:131.77 Kbytes Page:3 Pages

JMNIC

锦美电子

2N560产品属性

  • 类型

    描述

  • 型号

    2N560

  • 功能描述

    TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 100MA I(C) | TO-29

更新时间:2025-10-31 9:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS
25+
TO-92L
300000
百分百原装正品 真实公司现货库存 本公司只做原装 可
24+
N/A
52000
一级代理-主营优势-实惠价格-不悔选择
MOTOROLA/摩托罗拉
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
MOT
2023+
TO-66
58000
进口原装,现货热卖
MOTOROLA
24+
CAN3
1200
原装现货假一罚十
NJS
24+
NA/
3376
原装现货,当天可交货,原型号开票
Microchip Technology
25+
TO-213AA TO-66-2
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
MOTOROLA/摩托罗拉
23+
CAN3
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
24+
TO-66
10000
全新
MOTOROLA
专业铁帽
CAN3
1000
原装铁帽专营,代理渠道量大可订货

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