位置:首页 > IC中文资料第9452页 > 2N559

2N559晶体管资料

  • 2N559别名:2N559三极管、2N559晶体管、2N559晶体三极管

  • 2N559生产厂家:英国维斯特科特半导体公司_美国摩托罗拉半导体公司_

  • 2N559制作材料:Ge-PNP

  • 2N559性质:开关管 (S)

  • 2N559封装形式:直插封装

  • 2N559极限工作电压:15V

  • 2N559最大电流允许值:0.05A

  • 2N559最大工作频率:<1MHZ或未知

  • 2N559引脚数:3

  • 2N559最大耗散功率:0.15W

  • 2N559放大倍数

  • 2N559图片代号:D-8

  • 2N559vtest:15

  • 2N559htest:999900

  • 2N559atest:0.05

  • 2N559wtest:0.15

  • 2N559代换 2N559用什么型号代替:ASZ21,2N705(A),2N960,2N961,2N962,2N963,2N964,2N965,2N966,2N967,2N2635,2N2955,2N2956,2N2957,3AG55A,

型号 功能描述 生产厂家 企业 LOGO 操作

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector-emitter saturation voltage APPLICATIONS • For high frequency power amplifier ; audio power amplifier and drivers.

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector-emitter saturation voltage APPLICATIONS • For high frequency power amplifier ; audio power amplifier and drivers.

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • DC Current Gain- : hFE= 70-200@IC= -1A • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) • Complement to Type 2N5598 APPLICATIONS • Designed for use in high frequency power amplifiers, audio power amplifier and drivers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector-emitter saturation voltage APPLICATIONS • For high frequency power amplifier ; audio power amplifier and drivers.

SAVANTIC

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • DC Current Gain- : hFE= 70-200@IC= 1A • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) • Complement to Type 2N5597 APPLICATIONS • Designed for use in high frequency power amplifiers, audio power amplifier and drivers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector-emitter saturation voltage APPLICATIONS • For high frequency power amplifier ; audio power amplifier and drivers.

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector-emitter saturation voltage APPLICATIONS • For high frequency power amplifier ; audio power amplifier and drivers.

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • DC Current Gain- : hFE= 30-90@IC= -1A • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -80V(Min) • Complement to Type 2N5600 APPLICATIONS • Designed for use in high frequency power amplifiers, audio power amplifier and drivers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-66 package • Excellent safe operating area • Low collector-emitter saturation voltage APPLICATIONS • For high frequency power amplifier ; audio power amplifier and drivers.

SAVANTIC

RF & MICROWAVE TRANSISTORS 130...230MHz FM MOBILE APPLICATIONS

文件:620.05 Kbytes Page:5 Pages

MICROSEMI

美高森美

RF & MICROWAVE TRANSISTORS 130...230MHz FM MOBILE APPLICATIONS

文件:620.05 Kbytes Page:5 Pages

MICROSEMI

美高森美

Silicon PNP Power Transistors

文件:125.59 Kbytes Page:3 Pages

JMNIC

锦美电子

Bipolar PNP Device in a Hermetically sealed TO66 Metal Package

文件:11.92 Kbytes Page:1 Pages

SEME-LAB

Silicon PNP Power Transistors

文件:116.61 Kbytes Page:3 Pages

SAVANTIC

Bipolar Junction Transistors

TTELEC

Silicon PNP Power Transistors

文件:125.59 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:122.59 Kbytes Page:3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

文件:116.64 Kbytes Page:3 Pages

SAVANTIC

Bipolar Junction Transistors

TTELEC

Bipolar NPN Device in a Hermetically sealed TO66 Metal Package

文件:14.34 Kbytes Page:1 Pages

SEME-LAB

封装/外壳:TO-213AA,TO-66-2 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

Silicon NPN Power Transistors

文件:122.59 Kbytes Page:3 Pages

JMNIC

锦美电子

封装/外壳:TO-213AA,TO-66-2 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

Bipolar Junction Transistors

TTELEC

Silicon PNP Power Transistors

文件:116.61 Kbytes Page:3 Pages

SAVANTIC

Bipolar PNP Device in a Hermetically sealed TO66 Metal Package

文件:10.97 Kbytes Page:1 Pages

SEME-LAB

2N559产品属性

  • 类型

    描述

  • 功能描述:

    TRANSISTOR

更新时间:2026-7-22 16:35:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MICROSEMI/美高森美
26+
169
现货供应
MOTOROLA
23+
高频管
280
专营高频管模块,全新原装!
MOTOROLA/摩托罗拉
2019+
SMD
6992
原厂渠道 可含税出货
MOTOROLA/摩托罗拉
23+
TO-59
8510
原装正品代理渠道价格优势

2N559数据表相关新闻