Transistor GP BJT PNP 4-Pin 200V, 1A, 0.75W UA Waffle

This family of 2N5415 and 2N5416 epitaxial planar PNP transistors are military qualified up to a JANS level for high-reliability applications. These transistors are available in a TO-205AD (TO-39) and low profile surfacemount U4, U4 and UA packaging. JEDEC registered 2N5415 through 2N5416 series.JANHC, JANKC, JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/485\n(See part nomenclature for all available options.) RoHS compliant\nGeneral purpose transistors for low power applications requiring high frequency switching\nL;

包装：卷带（TR） 描述：PNP TRANSISTORS 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Silicon Low-Power -200 to -300V, 1A

This specification covers the performance requirements for PNP, silicon, switching, 2N5415 and 2N5416 transistors, complimentary to 2N3439 and 2N3440 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/485. Two l

封装/外壳：4-SMD，无引线 包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP LOW POWER SILICON TRANSISTOR

PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/485

PNP high-voltage transistors

DESCRIPTION PNP high-voltage transistor in a TO-39 metal package. FEATURES • Low current (max. 200 mA) • High voltage (max. 300 V). APPLICATIONS • Switching and linear amplification in military, industrial and consumer equipment.

HIGH-VOLTAGE AMPLIFIER

DESCRIPTION The 2N5415S is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case, intended for high vol-tage switching and linear amplifier applications.

PNP LOW POWER SILICON TRANSISTOR

PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/485

PNP LOW POWER SILICON TRANSISTOR

PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/485