EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, HIGH VOLTAGE)

GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES • High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V • Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V • Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA • Low Noise : NF=8dB (Max.)

TO-92 PACKAGE

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Amplifier Transistor(PNP Silicon)

PNP Silicon

PNP high-voltage transistor

DESCRIPTION PNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complement: 2N5551. FEATURES • Low current (max. 300 mA) • High voltage (max. 150 V). APPLICATIONS • General purpose switching and amplification • Telephony applications.

PNP EPITAXIAL SILICON TRANSISTOR

AMPLIFIER TRANSISTOR ● Collector-Emitter Voltage: VCEO = 150V ● Collector Dissipation: Pc (max) = 625mW

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications???

PNP Silicon Expitaxial Planar Transistor for general purpose, high voltage amplifier applications

PNP General Purpose Amplifier

PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.

TO-92 PACKAGE

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EPITAXIAL PLANAR PNP TRANSISTOR

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Bipolar PNP Device in a Hermetically sealed LCC1

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封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS PNP 150V 0.6A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS PNP 150V 0.6A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个