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2N5302晶体管资料
2N5302别名：2N5302三极管、2N5302晶体管、2N5302晶体三极管
2N5302生产厂家：美国摩托罗拉半导体公司_美国硅晶体技术公司_美国得
2N5302制作材料：Si-NPN
2N5302性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2N5302封装形式：直插封装
2N5302极限工作电压：60V
2N5302最大电流允许值：30A
2N5302最大工作频率：>2MHZ
2N5302引脚数：2
2N5302最大耗散功率：200W
2N5302放大倍数：
2N5302图片代号：E-44
2N5302vtest：60
2N5302htest：2000100
- 2N5302atest：30
2N5302wtest：200
2N5302代换 2N5302用什么型号代替：BDY29,MJ802,2SD797,
2N5302价格
参考价格：￥12.8214
型号：2N5302G 品牌：ONSemi 备注：这里有2N5302多少钱，2025年最近7天走势，今日出价，今日竞价，2N5302批发/采购报价，2N5302行情走势销售排行榜，2N5302报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2N5302 | POWER TRANSISTORS NPN SILICON High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  |   |
2N5302 | POWER TRANSISTORS(200W) NPN SILICON HIGH-POWER TRANSISTORS General Purpose use in power amplifier and switching circuit applications. | MOSPECMospec Semiconductor 统懋统懋半导体股份有限公司 |  | |
2N5302 | NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High Power Dissipation | WINGSWing Shing Computer Components 永盛电子永盛电子(香港)有限公司 |  | |
2N5302 | High-Power NPN Silicon Transistor High−Power NPN Silicon Transistor High−power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc • Pb−Free Package is Available* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
2N5302 | NPN HIGH POWER SILICON TRANSISTOR NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 |  | |
2N5302 | 200 WATT NPN SILICON POWER TRANSISTOR FEATURES • HFE ---------------------------- 15-60 @ 15 Amps • VCE(sat) ---------------------------- 2.0 V @ 20 Amps • Fast Switching 1 μsec Rise Time • Excellent Safe Operating Area | SSDI Solid States Devices, Inc |  | |
2N5302 | Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N4398/4399/5745 • Low collector/saturation voltage • Excellent safe operating area APPLICATIONS • For use in power amplifier and switching circuits applications. | SAVANTIC Savantic, Inc. |  | |
2N5302 | Silicon NPN Power Transistors DESCRIPTION • With TO-3 package • Complement to type 2N4398/4399/5745 • Low collector/saturation voltage • Excellent safe operating area APPLICATIONS • For use in power amplifier and switching circuits applications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
2N5302 | Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 |  | |
2N5302 | HIGH-POWER NPN SILICON TRANSISTORS 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40-60-80 Volts 200 Watts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
2N5302 | isc Silicon NPN Power Transistors 文件：221.06 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
2N5302 | 包装：散装 描述：NPN TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 |  | |
2N5302 | High?뭁ower NPN Silicon Transistor 文件：92.57 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
2N5302 | Silicon NPN Power Transistors 文件：116.28 Kbytes Page：3 Pages | SAVANTIC Savantic, Inc. | | |
2N5302 | Bipolar NPN Device in a Bipolar NPN Device in a Metal Package. 文件：11.29 Kbytes Page：1 Pages | SEME-LAB Seme LAB |  | |
High?뭁ower NPN Silicon Transistor 文件：92.57 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
isc Silicon NPN Power Transistors 文件：221.06 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
封装/外壳：TO-204AA，TO-3 包装：管件 描述：TRANS NPN 60V 30A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
High?뭁ower NPN Silicon Transistor 文件：92.57 Kbytes Page：5 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
2N5302产品属性
- 类型
描述
- 型号
2N5302
- 功能描述
两极晶体管 - BJT 30A 60V 200W NPN
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
三年内 |
1983 |
只做原装正品 |
|||||
ON |
22+ |
TO-220-3 |
50000 |
ON二三极管全系列在售 |
|||
TOS |
1738+ |
TO-3 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
ON/安森美 |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
CENTRAL |
1238 |
487 |
原装正品 |
||||
ON/安森美 |
23+ |
NA |
25630 |
原装正品 |
|||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
||||
ON/安森美 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
24+ |
TO-3 |
10000 |
全新 |
||||
MOTOROLA |
2023+ |
TO-3 |
50000 |
原装现货 |
2N5302芯片相关品牌
2N5302规格书下载地址
2N5302参数引脚图相关
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2N5302数据表相关新闻
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2020-8-5
DdatasheetPDF页码索引
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