POWER TRANSISTORS(200W)

NPN SILICON HIGH-POWER TRANSISTORS General Purpose use in power amplifier and switching circuit applications.

200 WATT NPN SILICON POWER TRANSISTOR

FEATURES • HFE ---------------------------- 15-60 @ 15 Amps • VCE(sat) ---------------------------- 2.0 V @ 20 Amps • Fast Switching 1 μsec Rise Time • Excellent Safe Operating Area

POWER TRANSISTORS NPN SILICON

High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N4398/4399/5745 • Low collector/saturation voltage • Excellent safe operating area APPLICATIONS • For use in power amplifier and switching circuits applications.

Power Transistors

Power Transistors

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N4398/4399/5745 • Low collector/saturation voltage • Excellent safe operating area APPLICATIONS • For use in power amplifier and switching circuits applications.

a very High Input Impedance N-Channel JFET amplifier

The 2N5301 is a very High Input Impedance N-Channel JFET amplifier The 2N5301 N-channel JFET is designed to provide performance amplification at low frequencies and with low noise. FEATURES DIRECT REPLACEMENT FOR LF5301 & PF5301 HIGH INPUT IMPENDANCE IG = 0.100 pA HIGH GAIN gf

HIGH-POWER NPN SILICON TRANSISTORS

20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40-60-80 Volts 200 Watts

a very High Input Impedance N-Channel JFET amplifier

The 2N5301 is a very High Input Impedance N-Channel JFET amplifier The 2N5301 N-channel JFET is designed to provide performance amplification at low frequencies and with low noise. FEATURES DIRECT REPLACEMENT FOR LF5301 & PF5301 HIGH INPUT IMPENDANCE IG = 0.100 pA HIGH GAIN gf

a very High Input Impedance N-Channel JFET amplifier

The 2N5301 is a very High Input Impedance N-Channel JFET amplifier The 2N5301 N-channel JFET is designed to provide performance amplification at low frequencies and with low noise. FEATURES DIRECT REPLACEMENT FOR LF5301 & PF5301 HIGH INPUT IMPENDANCE IG = 0.100 pA HIGH GAIN gf

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N4398/4399/5745 • Low collector/saturation voltage • Excellent safe operating area APPLICATIONS • For use in power amplifier and switching circuits applications.

HIGH-POWER NPN SILICON TRANSISTORS

20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40-60-80 Volts 200 Watts

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N4398/4399/5745 • Low collector/saturation voltage • Excellent safe operating area APPLICATIONS • For use in power amplifier and switching circuits applications.

200 WATT NPN SILICON POWER TRANSISTOR

FEATURES • HFE ---------------------------- 15-60 @ 15 Amps • VCE(sat) ---------------------------- 2.0 V @ 20 Amps • Fast Switching 1 μsec Rise Time • Excellent Safe Operating Area

Power Transistors

Power Transistors

POWER TRANSISTORS NPN SILICON

High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc

POWER TRANSISTORS(200W)

NPN SILICON HIGH-POWER TRANSISTORS General Purpose use in power amplifier and switching circuit applications.

NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER • High Current Capability • High Power Dissipation

High-Power NPN Silicon Transistor

High−Power NPN Silicon Transistor High−power NPN silicon transistors are for use in power amplifier and switching circuits applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc • Pb−Free Package is Available*

NPN HIGH POWER SILICON TRANSISTOR

NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456

NPN HIGH POWER SILICON TRANSISTOR

NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456

POWER TRANSISTORS(200W)

NPN SILICON HIGH-POWER TRANSISTORS General Purpose use in power amplifier and switching circuit applications.

POWER TRANSISTORS NPN SILICON

High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303) • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc

Power Transistors

Power Transistors

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N4398/4399/5745 • Low collector/saturation voltage • Excellent safe operating area APPLICATIONS • For use in power amplifier and switching circuits applications.

HIGH-POWER NPN SILICON TRANSISTORS

20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40-60-80 Volts 200 Watts

isc Silicon NPN Power Transistor

FEATURES ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max.)@ IC= 10A ·Wide Area of Safe Operation ·Complement to Type 2N5745 DESCRIPTION ·Designed for use in power amplifier and switching circuits applications.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Complement to type 2N4398/4399/5745 • Low collector/saturation voltage • Excellent safe operating area APPLICATIONS • For use in power amplifier and switching circuits applications.

SPRINGFIELD, NEW JERSEY 07091

Signal Transistor Silicon Darlington Transistors

Silicon Darlington Transistors

Silicon Darlington Transistors

SILICON TRANSISTORS

Signal Transistor Silicon Darlington Transistors

SILICON DARLINGTON TRANSISTORS

Silicon Darlington Transistors

SILICON DARLINGTON TRANSISTORS

Silicon Darlington Transistors

NPN Darlington Transistor

NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics.

Small Signal Transistors TO-92 Case (Continued)

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4400 and 2N4401 are silicon NPN transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N4402 and 2N4403. MARKING: FULL PART NUMBER

SILICON TRANSISTORS

Signal Transistor Silicon Darlington Transistors

NPN SILICON DARLINGTON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5306, 2N5308 types are NPN Silicon EPitaxial Planar Darlington Transistors designed for high gain amplifier applications.

Silicon Darlington Transistors

Silicon Darlington Transistors

SILICON TRANSISTORS

Signal Transistor Silicon Darlington Transistors

Silicon Darlington Transistors

Silicon Darlington Transistors

SILICON DARLINGTON TRANSISTORS

Silicon Darlington Transistors

NPN DARLINGTON AMPLIFIER

NPN DARLINGTON AMPLIFIER

NPN Darlington Transistor

• This device designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from Process 05. • See MPSA14 for characteristics.

SILICON TRANSISTORS

NPN-PNP Silicon Power Transistors

SPRINGFIELD, NEW JERSEY 07091

Signal Transistor Silicon Darlington Transistors

SILICON TRANSISTORS

NPN-PNP Silicon Power Transistors

NPN SILICON DARLINGTON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5306, 2N5308 types are NPN Silicon EPitaxial Planar Darlington Transistors designed for high gain amplifier applications.

SPRINGFIELD, NEW JERSEY 07091

Signal Transistor Silicon Darlington Transistors

NPN Darlington Transistor

• This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics.

NPN DARLINGTON AMPLIFIER

NPN DARLINGTON AMPLIFIER

Small Signal Transistors TO-92 Case (Continued)

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4400 and 2N4401 are silicon NPN transistors designed for general purpose amplifier and switching applications. PNP complementary types are 2N4402 and 2N4403. MARKING: FULL PART NUMBER

SILICON TRANSISTORS

NPN-PNP Silicon Power Transistors

SPRINGFIELD, NEW JERSEY 07091

Signal Transistor Silicon Darlington Transistors

SPRINGFIELD, NEW JERSEY 07091

Signal Transistor Silicon Darlington Transistors

三极管

Bipolar Junction Transistors

PNP Transistor

Silicon NPN Power Transistors

文件：116.28 Kbytes Page：3 Pages

Bipolar NPN Device in a Hermetically sealed TO3

文件：15.52 Kbytes Page：1 Pages

封装/外壳：TO-204AA，TO-3 包装：散装 描述：TRANS NPN 40V 30A TO3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个