Field Effect Transistor FET P-Channel -30V, -0.015A to -0.6A

This specification covers the performance requirements for P-channel, junction, silicon field-effect, 2N5114 Through 2N5116 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/476. The device package outlines are as follows: similar to TO-18 and surface mount LCC3 UB for all encapsulated device types.;

封装/外壳：3-SMD，无引线 包装：管件 描述：P CHANNEL JFET 分立半导体产品 晶体管 - JFET

封装/外壳：3-SMD，无引线 包装：散装 描述：JFET 分立半导体产品 晶体管 - JFET

P-Channel JFET Switch

GENERAL DESCRIPTION Ideal for inverting switching or Virtual Gnd switching into inverting input of Op. Amp. No driver is required and ±10VAC signals can be handled using only +5V logic (TTL or CMOS). FEATURES • Low ON Resistance • ID(off)

SINGLE P-CHANNEL JFET

FEATURES ● DIRECT REPLACEMENT FOR SILICONIX 2N5114 ● LOW ON RESISTANCE 75Ω ● LOW CAPACITANCE 6pF

P-Channel JFETs

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P-Channel JFETs

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P-CHANNEL J-FET

DESCRIPTION This leaded device is available in high-reliability equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. FEATURES • Surface mount equivalent to JEDEC registered 2N5116. • Screen