RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features ● Silicon NPN, To-39 packaged VHF/UHF Transistor ● 1 Watt Minimum Power Outp

Silicon planar epitaxial overlay transistors

DESCRIPTION NPN overlay transistors in TO-39 metal packages with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits. APPLICATIONS • The transistors are intended for use in output, driver or pre-dri

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. Features ● Silicon NPN, To-39 packaged VHF/UHF Transistor ● 1 Watt Minimum Power Out

Small Signal Transistors

Small Signal Transistors

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Features · Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50mA Power Gain, GPE = 10dB (Min) @ 175 MHz

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

RF&MICROWAVE DISCRETE

NPN UHF/VHF POWER TRANSISTORS The ITT 2N3866 and 2N4427 are silicon plannar epitaxial NPN power transistors intended for use in UHF/VHF applications.

NPN UHF/VHF POWER TRANSISTORS

NPN UHF/VHF POWER TRANSISTORS The ITT 2N3866 and 2N4427 are silicon plannar epitaxial NPN power transistors intended for use in UHF/VHF applications.

VHF OSCILLATOR POWER AMPLIFIER

DESCRIPTION The 2N4427 and BFR98 are silicon planar epitaxial NPN trnsistor in Jedec TO-39 metal case. They are designed for VHF class A, B, or C amplifier and oscillator applications.

封装/外壳：TO-205AD，TO-39-3 金属罐 包装：托盘 描述：RF TRANS NPN 20V 500MHZ TO39 分立半导体产品 晶体管 - 双极（BJT）- 射频

封装/外壳：TO-205AD，TO-39-3 金属罐 包装：散装 描述：RF TRANS NPN 40V 500MHZ TO39 分立半导体产品 晶体管 - 双极（BJT）- 射频

ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W

Trans GP BJT NPN 20V 0.4A 3-Pin TO-39

Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator

NPN - RF Transistor Die 0.4 Amp, 30 Volt

文件：665.86 Kbytes Page：9 Pages

PNP - RF Transistor Die 0.4 Amp, 40 Volt

文件：624.25 Kbytes Page：8 Pages

NPN - RF Transistor Die 0.4 Amp, 30 Volt

文件：631.67 Kbytes Page：9 Pages

NPN - RF Transistor Die 0.4 Amp, 20 Volt

文件：585.47 Kbytes Page：8 Pages

SILICON NPN RF TRANSISTOR

文件：723.63 Kbytes Page：3 Pages