N-Channel JFET Low Noise Amplifier

FEATURES • Exceptionally High Figure of Merit • Radiation Immunity • Extremely Low Noise and Capacitance • High Input Impedance APPLICATIONS • Low-level Choppers • Data Switches • Multiplexers and Low Noise Amplifiers

N-Channel JFETs

DESCRIPTION The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy. The TO-206AA (TO-18) package is hermetically sealed and suitab

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4338 Series devices are silicon N-Channel JFETs mounted in a hermetically sealed metal case designed for low level, low noise amplifier applications. MARKING: FULL PART NUMBER

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES

General-Purpose Device Types

Junction FETs Low Frequency/ Low Noise

N-Channel 2N4220 2N4221 2N4222 2N4338 2N4339 2N4340 2N4341 2N5457 2N5458 2N5459 2N5556 2N5557 PN3685 PN3686 PN3687 PN4302 PN4303 PN4304 P-CHANNEL 2N2608 2N2609 2N3820 2N5020 2N5460 2N5461 2N5462 PN4360

GATE-SOURCE BREAKDOWN VOLTAGE

DESCRIPTION The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy. The TO-206AA (TO-18) package is hermetically sealed and suitab

N-CHANNEL JFETS

DESCRIPTION The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy. The TO-206AA (TO-18) package is hermetically sealed and suitab

N-Channel JFETs

FEATURES
Low Cutoff Voltage: 2N4338

N-Channel JFETs

FEATURES
Low Cutoff Voltage: 2N4338

N-CHANNEL JFETS

DESCRIPTION The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy. The TO-206AA (TO-18) package is hermetically sealed and suitab

N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES

General-Purpose Device Types

N-Channel JFETs

DESCRIPTION The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy. The TO-206AA (TO-18) package is hermetically sealed and suitab

GATE-SOURCE BREAKDOWN VOLTAGE

DESCRIPTION The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy. The TO-206AA (TO-18) package is hermetically sealed and suitab

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4338 Series devices are silicon N-Channel JFETs mounted in a hermetically sealed metal case designed for low level, low noise amplifier applications. MARKING: FULL PART NUMBER

N-Channel JFET Low Noise Amplifier

FEATURES • Exceptionally High Figure of Merit • Radiation Immunity • Extremely Low Noise and Capacitance • High Input Impedance APPLICATIONS • Low-level Choppers • Data Switches • Multiplexers and Low Noise Amplifiers

Junction FETs Low Frequency/ Low Noise

N-Channel 2N4220 2N4221 2N4222 2N4338 2N4339 2N4340 2N4341 2N5457 2N5458 2N5459 2N5556 2N5557 PN3685 PN3686 PN3687 PN4302 PN4303 PN4304 P-CHANNEL 2N2608 2N2609 2N3820 2N5020 2N5460 2N5461 2N5462 PN4360

LOW NOISE VOLTAGE

• LOW NOISE VOLTAGE •• 0.08 μV/√Hz (MAX) @ 100 Hz • HIGH Yfs •• 4000 μmhos (MIN) • LOW rDS (on) •• 350 Ω (MAX) • LOW COST EPOXY PACKAGE

LOW NOISE VOLTAGE

• LOW NOISE VOLTAGE •• 0.08 μV/√Hz (MAX) @ 100 Hz • HIGH Yfs •• 4000 μmhos (MIN) • LOW rDS (on) •• 350 Ω (MAX) • LOW COST EPOXY PACKAGE

GERMANIUM POWER TRANSISTORS

GERMANIUM POWER TRANSISTORS

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • Low Collector-Emitter Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for application in industrial and commercial equipment including high f

HIGH POWER INDUSTRIAL TRANSISTORS

High-Voltage Silicon N-P-N Transistors High-Power Devices for Applicatons in Industrial and Commercial Equipment

HIGH POWER INDUSTRIAL TRANSISTORS

HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. • Low Collector-Emitter Saturation Voltage – VCE(sat) = 1.0 Vdc (Max) @ IC = 2

TO-3 Power Package Transistors (NPN)

TO-3 Power Package Transistors (NPN)

COLLECTOR CURRENT = 10 AMPS NPN TYPES

[API ELECTRONICS, INC.] COLLECTOR CURRENT = 10 AMPS NPN TYPES

POWER TRANSISTORS

HIGH-POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. • Collector-Emitter Sustaining Voltage VCEO(sus) = 120 V (Min.) – 2N4347

HIGH-POWER INDUSTRIAL TRANSISTORS

HIGH-POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. • Collector-Emitter Sustaining Voltage VCEO(sus) = 120 V (Min.) – 2N4347

HIGH VOLTAGE, HIGH CURRENT POWER TRANSISTORS

TO-3 Power Package Transistors (NPN)

COLLECTOR CURRENT = 10 AMPS NPN TYPES

[API ELECTRONICS, INC.] COLLECTOR CURRENT = 10 AMPS NPN TYPES

Hometaxial-Base, High-Current Silicon N-P-N Transistors

Rugged High Voltage Devices for Applications in Industrial and Commercial Equipment These typei are hometaxial-b»se silicon n-p-n transition intended for a wide variety of high-voltage high current applications. Typical applications for these transistors include power-switching circuits, audi

封装/外壳：TO-206AA，TO-18-3 金属罐 包装：管件 描述：IC JUNCTION FET N-CH TO-18 分立半导体产品 晶体管 - JFET

N-Channel JFET Low Noise Amplifier

文件：31.83 Kbytes Page：1 Pages

N-CHANNEL JUNCTION FET

文件：221.34 Kbytes Page：2 Pages

HIGH POWER INDUSTRIAL TRANSISTORS

文件：80.6 Kbytes Page：3 Pages

isc Silicon NPN Power Transistor

文件：261.25 Kbytes Page：2 Pages

包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个