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2N4233A晶体管资料
2N4233A别名：2N4233A三极管、2N4233A晶体管、2N4233A晶体三极管
2N4233A生产厂家：美国摩托罗拉半导体公司
2N4233A制作材料：Si-NPN
2N4233A性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2N4233A封装形式：直插封装
2N4233A极限工作电压：90V
2N4233A最大电流允许值：5A
2N4233A最大工作频率：>4MHZ
2N4233A引脚数：2
2N4233A最大耗散功率：75W
2N4233A放大倍数：
2N4233A图片代号：E-44
2N4233Avtest：90
2N4233Ahtest：4000100
- 2N4233Aatest：5
2N4233Awtest：75
2N4233A代换 2N4233A用什么型号代替：BD243B,BD539C,BD953,2N3054,3DD67D,
2N4233A价格
参考价格：￥122.2893
型号：2N4233A 品牌：Semiconductors 备注：这里有2N4233A多少钱，2025年最近7天走势，今日出价，今日竞价，2N4233A批发/采购报价，2N4233A行情走势销售排行榜，2N4233A报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N4233A | MEDIUM-POWER SILICON TRANSISTOR COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 |   | |
2N4233A | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N4233A | isc Silicon NPN Power Transistor DESCRIPTION • Excellent Safe Operating Area • Low Collector-Emitter Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for general-purpose power amplifier and switching applications | ISC 无锡固电 | | |
2N4233A | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex = | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N4233A | COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS ..designed for general-purpose power amplifier and switching applications. FEATURES: * Low Collector-Emitter Saturation Voltage VCE(sat)= 0.7 V (Max.) @ lc = 1.5A * Excellent DCCurrent Gain hFE = 25-100 @ lc = 1.5 A * LowLeakage Current- lcex =0. | boca 博卡 | | |
2N4233A | Power Transistors Power Transistors TO-66 Case | Central | | |
2N4233A | Bipolar NPN Device in a Hermetically sealed TO66 文件：15.16 Kbytes Page：1 Pages | SEME-LAB | | |
2N4233A | COMPLEMENTARY SILICON POWER TRANSISTORS 文件：344.67 Kbytes Page：2 Pages | Central | | |
2N4233A | 包装：散装 描述：PNP TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Microchip 微芯科技 | | |
2N4233A | Trans GP BJT NPN 80V 10A 3-Pin(2+Tab) TO-66 Sleeve | ETC 知名厂家 | ETC | |
2N4233A | 三极管 | MOSPEC 统懋 | | |
2N4233A | Bipolar Junction Transistors | TTELEC | | |
Power Transistors Power Transistors TO-66 Case | Central | | ||
Power Transistors Power Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Bipolar NPN Device in a Hermetically sealed TO66 文件：15.16 Kbytes Page：1 Pages | SEME-LAB | |
2N4233A产品属性
- 类型
描述
- 型号
2N4233A
- 制造商
Microsemi Corporation
- 功能描述
TRANS GP BJT NPN 80V 5A 3PIN TO-66 - Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
N/A |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
CENTRAL/中环 |
24+ |
CAN3 |
37935 |
郑重承诺只做原装进口现货 |
|||
MOT |
25+23+ |
38327 |
绝对原装正品全新进口深圳现货 |
||||
MOTOROLA/摩托罗拉 |
23+ |
CAN |
4600 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
SAMTEK |
新 |
37 |
全新原装 货期两周 |
||||
24+ |
TO-66 |
10000 |
全新 |
||||
MOTO |
TO3 |
1235 |
优势库存 |
||||
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
MOT |
2023+ |
CAN |
50000 |
全新原装现货 |
|||
MICROCHIP |
23+ |
7300 |
专注配单,只做原装进口现货 |
2N4233A规格书下载地址
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2N4233A数据表相关新闻
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DdatasheetPDF页码索引
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