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2N411晶体管资料

  • 2N411别名:2N411三极管、2N411晶体管、2N411晶体三极管

  • 2N411生产厂家:CSR_美国电子晶体管公司

  • 2N411制作材料:Ge-PNP

  • 2N411性质:射频/高频放大 (HF)

  • 2N411封装形式:直插封装

  • 2N411极限工作电压:13V

  • 2N411最大电流允许值:0.015A

  • 2N411最大工作频率:16MHZ

  • 2N411引脚数:3

  • 2N411最大耗散功率:0.08W

  • 2N411放大倍数

  • 2N411图片代号:C-37

  • 2N411vtest:13

  • 2N411htest:16000000

  • 2N411atest:0.015

  • 2N411wtest:0.08

  • 2N411代换 2N411用什么型号代替:AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,3AG54A,

2N411价格

参考价格:¥32.0894

型号:2N4117A 品牌:InterFET 备注:这里有2N411多少钱,2026年最近7天走势,今日出价,今日竞价,2N411批发/采购报价,2N411行情走势销售排行榜,2N411报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N411

GERMANIUM PNP TRANSISTORS

文件:2.44311 Mbytes Page:6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • Low Collector-Emitter Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for general-purpose switching and amplifier applications

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • Low Collector-Emitter Saturation Voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for general-purpose switching and amplifier applications

ISC

无锡固电

N-Channel Silicon Junction Field-Effect Transistor

General Information

INTERFET

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

INTERSIL

N-Channel JFET General Purpose Amplifier

FEATURES • Low Leakage • Low Capacitance

CALOGIC

N-Channel Silicon Junction Field-Effect Transistor

N-Channel Silicon Junction Field-Effect Transistor ● Audio Amplifiers ● Ultra-High Input Impedance Amplifiers

RHOPOINT

N-Channel Silicon Junction Field-Effect Transistor

N-Channel Silicon Junction Field-Effect Transistor ● Audio Amplifiers ● Ultra-High Input Impedance Amplifiers

RHOPOINT

an Ultra-High Input Impedance N-Channel JFET

The LS4117A is an Ultra-High Input Impedance N-Channel JFET The LS4117A provides ultra-high input impedance. The device is specified with a 1-pA limit and typically operates at 0.2 pA. The part is ideal for use as a high impedance sensitivefront-end amplifier. LS4117A Benefits: ƒ Ins

MICROSS

N-Channel JFET General Purpose Amplifier

FEATURES • Low Leakage • Low Capacitance

CALOGIC

N-Channel JFETs

DESCRIPTION The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. This makes them perfect choices for use as high-impedance sensitive front-end amplifiers. FEATURES ● Ultra-Low Leakag

VISHAYVishay Siliconix

威世威世科技公司

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

INTERSIL

N-Channel JFET General Purpose Amplifier

FEATURES • Low Leakage • Low Capacitance

CALOGIC

N-Channel Silicon Junction Field-Effect Transistor

N-Channel Silicon Junction Field-Effect Transistor ● Audio Amplifiers ● Ultra-High Input Impedance Amplifiers

RHOPOINT

N-Channel Silicon Junction Field-Effect Transistor

N-Channel Silicon Junction Field-Effect Transistor ● Audio Amplifiers ● Ultra-High Input Impedance Amplifiers

RHOPOINT

N-Channel JFET General Purpose Amplifier

FEATURES • Low Leakage • Low Capacitance

CALOGIC

N-Channel JFETs

DESCRIPTION The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. This makes them perfect choices for use as high-impedance sensitive front-end amplifiers. FEATURES ● Ultra-Low Leakag

VISHAYVishay Siliconix

威世威世科技公司

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

INTERSIL

N-Channel JFET General Purpose Amplifier

FEATURES • Low Leakage • Low Capacitance

CALOGIC

N-Channel Silicon Junction Field-Effect Transistor

N-Channel Silicon Junction Field-Effect Transistor ● Audio Amplifiers ● Ultra-High Input Impedance Amplifiers

RHOPOINT

N-Channel Silicon Junction Field-Effect Transistor

N-Channel Silicon Junction Field-Effect Transistor ● Audio Amplifiers ● Ultra-High Input Impedance Amplifiers

RHOPOINT

N-Channel JFET General Purpose Amplifier

FEATURES • Low Leakage • Low Capacitance

CALOGIC

N-Channel JFETs

DESCRIPTION The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. This makes them perfect choices for use as high-impedance sensitive front-end amplifiers. FEATURES ● Ultra-Low Leakag

VISHAYVishay Siliconix

威世威世科技公司

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

文件:14.7 Kbytes Page:1 Pages

SEME-LAB

封装/外壳:TO-204AA,TO-3 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.

文件:14.7 Kbytes Page:1 Pages

SEME-LAB

Trans GP BJT NPN 60V 5A 3-Pin(2+Tab) TO-3

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistor

文件:256.959 Kbytes Page:2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

文件:257.209 Kbytes Page:2 Pages

ISC

无锡固电

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

TTELEC

Trans GP BJT NPN 80V 5A 3-Pin(2+Tab) TO-3

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

封装/外壳:TO-204AA,TO-3 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

文件:11.29 Kbytes Page:1 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

文件:12.14 Kbytes Page:1 Pages

SEME-LAB

NPN POWER TRANSISTORS

文件:143.44 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS

文件:173.83 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

an Ultra-High Input Impedance N-Channel JFET

文件:294.56 Kbytes Page:1 Pages

MICROSS

N-Channel JFET General Purpose Amplifier

文件:33.45 Kbytes Page:1 Pages

CALOGIC

N-Channel JFET General Purpose Amplifier

文件:33.45 Kbytes Page:1 Pages

CALOGIC

an Ultra-High Input Impedance N-Channel JFET

文件:294.56 Kbytes Page:1 Pages

MICROSS

N-Channel JFET General Purpose Amplifier

文件:33.45 Kbytes Page:1 Pages

CALOGIC

N-Channel JFETs

文件:74.32 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel JFET General Purpose Amplifier

文件:33.45 Kbytes Page:1 Pages

CALOGIC

ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET

文件:14.16 Kbytes Page:1 Pages

LINEAR

ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET AMPLIFIER

文件:168.55 Kbytes Page:2 Pages

LINEAR

ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET AMPLIFIER

文件:333.45 Kbytes Page:2 Pages

LINEAR

N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS

文件:173.83 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

an Ultra-High Input Impedance N-Channel JFET

文件:294.88 Kbytes Page:1 Pages

MICROSS

an Ultra-High Input Impedance N-Channel JFET

文件:295.14 Kbytes Page:1 Pages

MICROSS

N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS

文件:173.83 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET

文件:14.16 Kbytes Page:1 Pages

LINEAR

an Ultra-High Input Impedance N-Channel JFET

文件:295.14 Kbytes Page:1 Pages

MICROSS

an Ultra-High Input Impedance N-Channel JFET

文件:295.46 Kbytes Page:1 Pages

MICROSS

N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS

文件:173.83 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET

文件:14.16 Kbytes Page:1 Pages

LINEAR

ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET AMPLIFIER

文件:333.45 Kbytes Page:2 Pages

LINEAR

ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET AMPLIFIER

文件:168.55 Kbytes Page:2 Pages

LINEAR

N-Channel JFETs

文件:74.32 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

an Ultra-High Input Impedance N-Channel JFET

文件:295.46 Kbytes Page:1 Pages

MICROSS

an Ultra-High Input Impedance N-Channel JFET

文件:294.57 Kbytes Page:1 Pages

MICROSS

2N411产品属性

  • 类型

    描述

  • Maximum Power Dissipation:

    15000mW

  • Maximum DC Collector Current:

    5A

  • Maximum Collector Emitter Voltage:

    60V

  • Maximum Collector Emitter Saturation Voltage:

    1.5@0.5mA@2mAV

  • Configuration:

    Single

  • Category:

    Bipolar Power

更新时间:2026-5-13 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ADI(亚德诺)
24+
TO-72-4
907
原厂订货渠道,支持BOM配单一站式服务
ADI(亚德诺)
25+
TO-72-4
18798
原装正品现货,原厂订货,可支持含税原型号开票。
VISHAY
23+
DIP
20000
全新原装假一赔十
Vishay
24+
CAN4
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
VISHAY/威世
2026+
CAN4
54658
百分百原装现货 实单必成
MOTOROLA/摩托罗拉
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
MOT
9348
CAN3
500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
原厂
2540+
CAN3
6852
只做原装正品假一赔十为客户做到零风险!!
TH
23+
NA
342
专做原装正品,假一罚百!
VISHAY
原厂封装
9800
原装进口公司现货假一赔百

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