2A, 400V N-CHANNEL POWER MOSFET

The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching performance. It also can withstand high energy pulse in the avalanche. The UTC 2N40 is usually used in gene • High switching speed \n• RDS(ON)=3.4Ω @ VGS=10V \n• 100% avalanche tested;

2 Amps, 400 Volts N-CHANNEL POWER MOSFET

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2A, 400V N-CHANNEL POWER MOSFET

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Small Signal Transistors

Small Signal Transistors TO-39 Case

NPN SWITCHING TRANSISTORS

NPN SWITCHING TRANSISTORS Ic = 1.0 AMPS

NPN SWITCHING TRANSISTORS

NPN SWITCHING TRANSISTORS Ic = 1.0 AMPS

Small Signal Transistors

Small Signal Transistors TO-39 Case

N-Channel Enhancement Mode Power MOSFET

DRAIN CURRENT 0.5 AMPERES DRAIN SOUCE VOLTAGE 30 VOLTAGE Features: * Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design. * Low Gate Charge for Fast Switching. * ESD Protected Gate. * Minimum Breakdown Voltage Rating of 30V. Application: * Level Shi

HIGH-POWER SILICON N-P-N TRANSISTOR

High-Power Silicon N-P-N Transistor

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

HIGH SPEED NPN SILICON PLANAR EPITAXIAL

HIGH SPEED NPN SILICON PLANAR EPITAXIAL HIGH-VOLTAGE HIGH-CURRENT TRANSISTORS

SWITCHING TRANSISTOR NPN SILICON

HIGH SPEED NPN SILICON PLANAR EPITAXIAL HIGH-VOLTAGE HIGH-CURRENT TRANSISTORS

Small Signal Transistors

Small Signal Transistors TO-18 Case (Continued)

Small Signal Transistors

Small Signal Transistors TO-18 Case (Continued)

HIGH SPEED NPN SILICON PLANAR EPITAXIAL

HIGH SPEED NPN SILICON PLANAR EPITAXIAL HIGH-VOLTAGE HIGH-CURRENT TRANSISTORS

SWITCHING TRANSISTOR NPN SILICON

HIGH SPEED NPN SILICON PLANAR EPITAXIAL HIGH-VOLTAGE HIGH-CURRENT TRANSISTORS

HIGH-VOLTAGE, HIGH CURRENT SWITCH

DESCRIPTION The 2N4014 is a silicon planar epitaxial transistor in TO-18 metal case. It is a high-voltage, high current switch used for memory applications requiring breakdown voltages up to 50 V and operating currents to 1 A. Fast switching times are assured because of the high minimum fT (300 M

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

Small Signal Transistors

Small Signal Transistors TO-18 Case (Continued)

Small Signal Transistors

Small Signal Transistors TO-18 Case (Continued)

Small Signal Transistors

Small Signal Transistors TO-18 Case (Continued)

Small Signal Transistors

Small Signal Transistors TO-18 Case (Continued)

Type 2N4029 Geometry 6700 Polarity PNP

Features: • General-purpose transistor for high speed switching and driver applicatons. • Housed in a TO-18 case. • Also available in chip form using the 6700 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/512 which Semicoa meets in all cases.

Silicon PNP Transistor

Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N4029J) • JANTX level (2N4029JX) and • JANTXV level (2N4029JV) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testi

Small Signal Switching Transistor

PNP Silicon Features • MIL−PRF−19500/512 Qualified • Available as JAN, JANTX, and JANTXV

PNP SILICON SWITCHING TRANSISTOR

PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/512

PNP SILICON TRANSISTOR

DESCRIPTION 2N4029 is PNP silicon planar epitaxial transistor for AF medium power drivers and outputs.

Silicon PNP Transistor

Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N4029J) • JANTX level (2N4029JX) and • JANTXV level (2N4029JV) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testi

GENERAL PURPOSE AMPLIFIERS AND SWITCHES

GENERAL PURPOSE AMPLIFIERS AND SWITCHES They are silicon planar epitaxial PNP transistors mounted in TO-39 metal package. They are intended for large signal, low noise industrial applications. Compliance to RoHS.

Small Signal Transistors

Small Signal Transistors

PNP SILICON PLANAR TRANSISTORS

2N4030 And 2N4033 ARE PNP SMALL SIGNAL GENERAL PURPOSE AMLIFIER, TRANSISTORS.

PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

GENERAL PURPOSE HIGH-VOLTAGE

• High Voltage: -80V (2N4031, 3) • High Gain: 100 min. @ 100 mA (2N4032, 3) • Low VCE(sat): -0.15 @ 150 mA

GENERAL PURPOSE HIGH-VOLTAGE

• High Voltage: -80V (2N4031, 3) • High Gain: 100 min. @ 100 mA (2N4032, 3) • Low VCE(sat): -0.15 @ 150 mA

PNP SILICON PLANAR TRANSISTORS

2N4030 And 2N4033 ARE PNP SMALL SIGNAL GENERAL PURPOSE AMLIFIER, TRANSISTORS.

GENERAL PURPOSE AMPLIFIERS AND SWITCHES

GENERAL PURPOSE AMPLIFIERS AND SWITCHES They are silicon planar epitaxial PNP transistors mounted in TO-39 metal package. They are intended for large signal, low noise industrial applications. Compliance to RoHS.

Small Signal Transistors

Small Signal Transistors

GENERAL PURPOSE AMPLIFIERS AND SWITCHES

GENERAL PURPOSE AMPLIFIERS AND SWITCHES They are silicon planar epitaxial PNP transistors mounted in TO-39 metal package. They are intended for large signal, low noise industrial applications. Compliance to RoHS.

Power Transistor

Description: A Silicon PNP transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage, low leakage current. Low capacity, and beta useful over an extremely wide current range. Description Transistor, PNP, 1A, 60V, T

PNP SILICON PLANAR TRANSISTORS

2N4030 And 2N4033 ARE PNP SMALL SIGNAL GENERAL PURPOSE AMLIFIER, TRANSISTORS.

Small Signal Transistors

Small Signal Transistors

GENERAL PURPOSE TRANSISTOR (PNP SILICON)

GENERAL PURPOSE TRANSISTORS PNP SILICON

GENERAL PURPOSE HIGH-VOLTAGE

• High Voltage: -80V (2N4031, 3) • High Gain: 100 min. @ 100 mA (2N4032, 3) • Low VCE(sat): -0.15 @ 150 mA

Bipolar PNP Device in a Hermetically sealed TO39

Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. Bipolar PNP Device. VCEO = 60V IC = 1A

HIGH SPEED MEDIUM VOLTAGE SWITCH

DESCRIPTION The 2N4033 is a silicon expitaxial planar PNP transistors in jedec TO-39 metal case intended for use in switching applications.

GENERAL PURPOSE AMPLIFIER AND SWITCH

DESCRIPTION The 2N4033 is a silicon planar epitaxial PNP transistors in Jedec TO-39 metal case primary intended for large signal, low noise industrial applications.

PNP SILICON PLANAR TRANSISTOR

PNP Silicon Planar Transistor 2 N 4033 is an exitaxial PNP silicon planar transistor in TO 39 case (5 C 3 DIN 41873). The collector is electrically connected to the case. The Transistor is particularly intended for use in AF amplifiers and for AF switching applications up to 1A.

PNP SILICON TRANSISTOR

Features: • General Purpose PNP Transistor. • Hermetic TO-39 (TO-205AD) Metal Package. • Ideally Suited For High Speed Switching and Driver Applications. • Screening Options Available.

GENERAL PURPOSE HIGH-VOLTAGE

• High Voltage: -80V (2N4031, 3) • High Gain: 100 min. @ 100 mA (2N4032, 3) • Low VCE(sat): -0.15 @ 150 mA

GENERAL PURPOSE TRANSISTOR (PNP SILICON)

GENERAL PURPOSE TRANSISTORS PNP SILICON

PNP SILICON SWITCHING TRANSISTOR

PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/512

Small Signal Switching Transistor

PNP Silicon Features • MIL−PRF−19500/512 Qualified • Available as JAN, JANTX, and JANTXV

PNP BIPOLAR TRANSISTOR

PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/512

PNP SILICON PLANAR TRANSISTORS

2N4030 And 2N4033 ARE PNP SMALL SIGNAL GENERAL PURPOSE AMLIFIER, TRANSISTORS.

Small Signal Transistors

Small Signal Transistors

PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4033 type is a PNP silicon transistor manufactured by the epitaxial planar process, designed for high current general purpose amplifier applications. MARKING: FULL PART NUMBER

GENERAL PURPOSE AMPLIFIERS AND SWITCHES

GENERAL PURPOSE AMPLIFIERS AND SWITCHES They are silicon planar epitaxial PNP transistors mounted in TO-39 metal package. They are intended for large signal, low noise industrial applications. Compliance to RoHS.

Type 2N4033 Geometry 6700 Polarity PNP

Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N4033J) • JANTX level (2N4033JX) and • JANTXV level (2N4033JV) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 method 2072 for JANTXV •

General Purpose Transistor

Features: • PNP Silicon Planar RF Transistor • Small Signal General Purpose Amplifier, Transistor Description Transistor, PNP, TO-39