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2N3998晶体管资料
2N3998别名：2N3998三极管、2N3998晶体管、2N3998晶体三极管
2N3998生产厂家：美国固体电子公司_美国得克萨斯仪表公司_美国晶体管
2N3998制作材料：Si-NPN
2N3998性质：开关管 （S）_功率放大 （L）
2N3998封装形式：特殊封装
2N3998极限工作电压：100V
2N3998最大电流允许值：5A
2N3998最大工作频率：>40MHZ
2N3998引脚数：3
2N3998最大耗散功率：30W
2N3998放大倍数：
2N3998图片代号：F-28
2N3998vtest：100
2N3998htest：40000100
- 2N3998atest：5
2N3998wtest：30
2N3998代换 2N3998用什么型号代替：BLX19,2N1724,,2N5002,2N5004,2N5284,2N5285,3DK204B,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N3998 | NPN POWER SWITCHING SILICON TRANSISTOR NPN POWER SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/374 | MICROSEMI 美高森美 |   | |
2N3998 | Silicon NPN Transistor Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3998J) • JANTX level (2N3998JX) • JANTXV level (2N3998JV) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing ( | SEMICOA | | |
2N3998 | N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR SILICON PLANAR NPN POWER TRANSISTORS 5 AMP POWER SWITCHING TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N3998 | SWITCHING TRANSISTORS SILICON PLANAR NPN POWER TRANSISTORS 5 AMP POWER SWITCHING TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N3998 | NPN Silicon High-Speed Power 80V, 10A This specification covers the performance requirements for NPN silicon, power 2N3996 through 2N3999 transistors for use in high-speed power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/3 | MICROCHIP 微芯科技 | | |
2N3998 | 包装：散装 描述：NPN TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | MICROCHIP 微芯科技 | | |
2N3998 | Chip Type 2C5154 Geometry 9201 Polarity NPN 文件：33.57 Kbytes Page：1 Pages | SEMICOA | | |
2N3998 | NPN POWER SWITCHING SILICON TRANSISTOR 文件：181.57 Kbytes Page：4 Pages | MICROSEMI 美高森美 | | |
Silicon NPN Transistor Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3998J) • JANTX level (2N3998JX) • JANTXV level (2N3998JV) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation testing ( | SEMICOA | | ||
Bipolar NPN Device in a Hermetically sealed 文件：14.66 Kbytes Page：1 Pages | SEME-LAB | | ||
Bipolar Junction Transistors | TTELEC | | ||
Bipolar Junction Transistors | TTELEC | | ||
Bipolar NPN Device in a Hermetically sealed 文件：16.239 Kbytes Page：1 Pages | SEME-LAB | | ||
NPN POWER SWITCHING SILICON TRANSISTOR NPN POWER SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/374 | MICROSEMI 美高森美 | | ||
NPN POWER SWITCHING SILICON TRANSISTOR NPN POWER SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/374 | MICROSEMI 美高森美 | |
2N3998产品属性
- 类型
描述
- 型号
2N3998
- 制造商
Microsemi Corporation
- 功能描述
TRANS GP BJT NPN 80V 5A 4PIN TO-111 - Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Microchip Technology / Atmel |
25+ |
N/A |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
MICROSEMI/美高森美 |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
MOT |
24+ |
CAN3 |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ST |
25+ |
CAN to-39 |
20000 |
原装，请咨询 |
|||
ST |
23+ |
CAN to-39 |
16900 |
正规渠道,只有原装! |
|||
ST |
26+ |
CAN to-39 |
60000 |
只有原装 可配单 |
|||
UNITRODE |
24+ |
700 |
|||||
JST/日压 |
2608+ |
/ |
129991 |
一级代理，原装现货 |
|||
Microchip Technology / Atmel |
25+ |
N/A |
6843 |
样件支持,可原厂排单订货! |
|||
MICROSEMI/美高森美 |
25+ |
MODULE |
334 |
主打螺丝模块系列 |
2N3998芯片相关品牌
2N3998规格书下载地址
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2N3998数据表相关新闻
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DdatasheetPDF页码索引
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