Silicon NPN Transistor

Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3960UBJ) • JANTX level (2N3960UBJX) • JANTXV level (2N3960UBJV) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation tes

NPN SILICON SWITCHING TRANSISTOR

NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/399

NPN Silicon Switching 12V, 0.03A

This specification covers the performance requirements for NPN silicon, switching 2N3960 and 2N3960UB transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each device type and two levels for unencapsulated die as specified in MIL-PRF-19500/399. Two levels of

封装/外壳：3-SMD，无引线 包装：散装 描述：TRANS NPN 12V UB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Chip Type 2C3960 Geometry 0003 Polarity NPN

文件：29.98 Kbytes Page：1 Pages

Silicon NPN Transistor

Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N3960UBJ) • JANTX level (2N3960UBJX) • JANTXV level (2N3960UBJV) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 method 2072 for JANTXV • Radiation tes

封装/外壳：3-SMD，无引线 包装：卷带（TR） 描述：SMALL-SIGNAL BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Type 2N3960 Geometry 0003 Polarity NPN

Features: • General-purpose low-power NPN silicon transistor. • Housed in TO-18 case. • Also available in chip form using the 0003 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/399 which Semicoa meets in all cases.

Silicon NPN Transistor

文件：211.67 Kbytes Page：2 Pages

Chip Type 2C3960 Geometry 0003 Polarity NPN

文件：29.98 Kbytes Page：1 Pages