2N392晶体管资料

  • 2N392别名:2N392三极管、2N392晶体管、2N392晶体三极管

  • 2N392生产厂家:CSR_DEL_美国电子晶体管公司

  • 2N392制作材料:Ge-PNP

  • 2N392性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2N392封装形式:直插封装

  • 2N392极限工作电压:60V

  • 2N392最大电流允许值:5A

  • 2N392最大工作频率:<1MHZ或未知

  • 2N392引脚数:2

  • 2N392最大耗散功率

  • 2N392放大倍数

  • 2N392图片代号:E-44

  • 2N392vtest:60

  • 2N392htest:999900

  • 2N392atest:5

  • 2N392wtest:0

  • 2N392代换 2N392用什么型号代替:AD166,AUY21,2N1535,2N1536,2N1537,2N1538,2N1540,2N1545,2N1546,2N1547,2N1548,2N3614,2N3615,2N3616,2N3617,2N3618,3AD57A,

型号 功能描述 生产厂家&企业 LOGO 操作

COLLECTOR CURRENT = 10 AMPS NPN TYPES

[API ELECTRONICS, INC.] COLLECTOR CURRENT = 10 AMPS NPN TYPES

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

MONOLITHIC DUAL N-CHANNEL JFET HENERAL PURPOSE AMPLIFIER

FEATURES • Low Drain Current • High Output Impedance • Matched VGS, ΔVGS and gfs

Calogic

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

Intersil

Monolithic Dual N-Channel JFET General Purpose Amplifier

FEATURES • Low Drain Current • High Output Impedance • Matched VGS, ΔVGS and gfs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

Monolithic Dual N-Channel JFET General Purpose Amplifier

FEATURES • Low Drain Current • High Output Impedance • Matched VGS, ΔVGS and gfs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

P-CHANNEL JFET

GENERAL INFORMATION/CROSS REFERENCES

Intersil

MONOLITHIC DUAL N-CHANNEL JFET HENERAL PURPOSE AMPLIFIER

FEATURES • Low Drain Current • High Output Impedance • Matched VGS, ΔVGS and gfs

Calogic

Small Signal Transistors

Small Signal Transistors TO-39 Case

Central

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

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etc未分类制造商未分类制造商

NPN SILICON ANNULAR

NPN silicon annular RF power transistors, optimized for large-signal power-amplifier and driver applications to 300 MHz. Collector electrically connected to case; stud electrically isolated from case.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

COMMUNICATIONS TRANSISTORS

NPN silicon annular RF power transistors, optimized for large-signal power-amplifier and driver applications to 300 MHz. Collector electrically connected to case; stud electrically isolated from case.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

SI NPN POWER HF BJT

NPN silicon annular RF power transistors, optimized for large-signal power-amplifier and driver applications to 300 MHz. Collector electrically connected to case; stud electrically isolated from case.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NPN SILICON ANNULAR

NPN silicon annular RF power transistors, optimized for large-signal power-amplifier and driver applications to 300 MHz. Collector electrically connected to case; stud electrically isolated from case.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NPN SILICON ANNULAR

NPN silicon annular RF power transistors, optimized for large-signal power-amplifier and driver applications to 300 MHz. Collector electrically connected to case; stud electrically isolated from case.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

COMMUNICATIONS TRANSISTORS

NPN silicon annular RF power transistors, optimized for large-signal power-amplifier and driver applications to 300 MHz. Collector electrically connected to case; stud electrically isolated from case.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

NPN SILICON ANNULAR

NPN silicon annular RF power transistors, optimized for large-signal power-amplifier and driver applications to 300 MHz. Collector electrically connected to case; stud electrically isolated from case.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

封装/外壳:TO-204AA,TO-3 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

Microchip

微芯科技

Performance Curves NNR See Section 4

文件:76.49 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Performance Curves NNR See Section 4

文件:76.49 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2N392产品属性

  • 类型

    描述

  • 型号

    2N392

  • 制造商

    RAYTHN

更新时间:2025-8-7 19:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROLA/摩托罗拉
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
1738+
TO-3
8529
科恒伟业!只做原装正品,假一赔十!
MOT
22+
CAN
5000
MOT
24+
CAN6
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
ST
23+
CAN to-39
16900
正规渠道,只有原装!
MOTOROLA/摩托罗拉
23+
CAN3
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
ANY
10
全新原装 货期两周
24+
TO-3
10000
全新
MOT
23+
CAN6
5000
原装正品,假一罚十
MOTOROLA
专业铁帽
CAN3
3500
原装铁帽专营,代理渠道量大可订货

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