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2N385晶体管资料

  • 2N385别名:2N385三极管、2N385晶体管、2N385晶体三极管

  • 2N385生产厂家:CSR_美国电子晶体管公司_IDI

  • 2N385制作材料:Ge-NPN

  • 2N385性质:射频/高频放大 (HF)_开关管 (S)

  • 2N385封装形式:直插封装

  • 2N385极限工作电压:25V

  • 2N385最大电流允许值:0.2A

  • 2N385最大工作频率:6MHZ

  • 2N385引脚数:3

  • 2N385最大耗散功率:0.15W

  • 2N385放大倍数

  • 2N385图片代号:D-9

  • 2N385vtest:25

  • 2N385htest:6000000

  • 2N385atest:0.2

  • 2N385wtest:0.15

  • 2N385代换 2N385用什么型号代替:ASY28,ASY29,ASY73,ASY74,ASY75,2N13,2N14,3BX85C,

型号 功能描述 生产厂家 企业 LOGO 操作

SILICON TRANSISTORS

Silicon Transistors 2N3854, A, 2N3855, A, 2N3856, A, are NPN silicon planar epitaxial passivated transistors designed primarily for RF, IF and converter applicaitons in AM and FM receivers. Selected high voltage units are available for TV video amplifiers. (See typical BVceo)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRANSISTORS

Silicon Transistors 2N3854, A, 2N3855, A, 2N3856, A, are NPN silicon planar epitaxial passivated transistors designed primarily for RF, IF and converter applicaitons in AM and FM receivers. Selected high voltage units are available for TV video amplifiers. (See typical BVceo)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRANSISTORS

Silicon Transistors 2N3854, A, 2N3855, A, 2N3856, A, are NPN silicon planar epitaxial passivated transistors designed primarily for RF, IF and converter applicaitons in AM and FM receivers. Selected high voltage units are available for TV video amplifiers. (See typical BVceo)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRANSISTORS

Silicon Transistors 2N3854, A, 2N3855, A, 2N3856, A, are NPN silicon planar epitaxial passivated transistors designed primarily for RF, IF and converter applicaitons in AM and FM receivers. Selected high voltage units are available for TV video amplifiers. (See typical BVceo)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRANSISTOR

Silicon Transistors 2N3854, A, 2N3855, A, 2N3856, A, are NPN silicon planar epitaxial passivated transistors designed primarily for RF, IF and converter applicaitons in AM and FM receivers. Selected high voltage units are available for TV video amplifiers. (See typical BVceo)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRANSISTORS

Silicon Transistors 2N3854, A, 2N3855, A, 2N3856, A, are NPN silicon planar epitaxial passivated transistors designed primarily for RF, IF and converter applicaitons in AM and FM receivers. Selected high voltage units are available for TV video amplifiers. (See typical BVceo)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRANSISTORS

Silicon Transistors 2N3854, A, 2N3855, A, 2N3856, A, are NPN silicon planar epitaxial passivated transistors designed primarily for RF, IF and converter applicaitons in AM and FM receivers. Selected high voltage units are available for TV video amplifiers. (See typical BVceo)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRANSISTORS

Silicon Transistors The GE/RCA 2N3858, 2N3859 and 2N3860 are planar epitaxial passivated NPN silicon transistors designed primarlly for AM radio I.F. and converter applications. These types are supplied in JEDEC to-98 package.

GESS

SILICON TRANSISTORS

Silicon Transistors The GE/RCA 2N3858, 2N3859 and 2N3860 are planar epitaxial passivated NPN silicon transistors designed primarlly for AM radio I.F. and converter applications. These types are supplied in JEDEC to-98 package.

GESS

SILICON TRANSISTORS

Silicon Transistors The GE/RCA 2N3858, 2N3859 and 2N3860 are planar epitaxial passivated NPN silicon transistors designed primarlly for AM radio I.F. and converter applications. These types are supplied in JEDEC to-98 package.

GESS

Silicon Transistors

Silicon Transistors NPN

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRANSISTORS

Silicon Transistors The GE/RCA 2N3858, 2N3859 and 2N3860 are planar epitaxial passivated NPN silicon transistors designed primarlly for AM radio I.F. and converter applications. These types are supplied in JEDEC to-98 package.

GESS

NPN General Purpose Amplifier

NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics.

FAIRCHILD

仙童半导体

Small Signal Transistors

Small Signal Transistors

CENTRAL

Silicon Transistors

Silicon Transistors NPN

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

封装/外壳:TO-210AA,TO-59-4,接线柱 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

封装/外壳:TO-210AA,TO-59-4,接线柱 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

Trans GP BJT NPN 40V 5A 3-Pin TO-59

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans GP BJT NPN 80V 5A 3-Pin TO-59

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans GP BJT NPN 80V 5A 3-Pin TO-59

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN General Purpose Amplifier

文件:59.13 Kbytes Page:3 Pages

FAIRCHILD

仙童半导体

NPN General Purpose Amplifier

文件:59.13 Kbytes Page:3 Pages

FAIRCHILD

仙童半导体

SILICON NPN TRANSISTOR

文件:316.24 Kbytes Page:3 Pages

CENTRAL

2N385产品属性

  • 类型

    描述

  • Maximum Power Dissipation:

    30000mW

  • Maximum DC Collector Current:

    5A

  • Maximum Collector Emitter Voltage:

    40V

  • Maximum Collector Emitter Saturation Voltage:

    0.5@0.2mA@1mAV

  • Configuration:

    Single

  • Category:

    Bipolar Power

更新时间:2026-7-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
TO-92-3
20948
样件支持,可原厂排单订货!
onsemi(安森美)
25+
TO-92-3
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
FSC袋装
25+
TO-92
66880
原装正品,欢迎询价
FSC/ON
26+
原包装原封 □□
13250
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存
原厂
25+
1500
百分百原装正品 真实公司现货库存 本公司只做原装 可
仙童
24+
TO-92
5000
FAIRCHI
18+
TO-92
85600
保证进口原装可开17%增值税发票
ON
23+
TO-92
616
专注配单,只做原装进口现货
FAIRCHILD/仙童
26+
TO-92
4790
原厂全新正品旗舰店优势现货
MCEL
25+
1534
全新原装现货库存

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