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2N385晶体管资料

  • 2N385别名:2N385三极管、2N385晶体管、2N385晶体三极管

  • 2N385生产厂家:CSR_美国电子晶体管公司_IDI

  • 2N385制作材料:Ge-NPN

  • 2N385性质:射频/高频放大 (HF)_开关管 (S)

  • 2N385封装形式:直插封装

  • 2N385极限工作电压:25V

  • 2N385最大电流允许值:0.2A

  • 2N385最大工作频率:6MHZ

  • 2N385引脚数:3

  • 2N385最大耗散功率:0.15W

  • 2N385放大倍数

  • 2N385图片代号:D-9

  • 2N385vtest:25

  • 2N385htest:6000000

  • 2N385atest:0.2

  • 2N385wtest:0.15

  • 2N385代换 2N385用什么型号代替:ASY28,ASY29,ASY73,ASY74,ASY75,2N13,2N14,3BX85C,

型号 功能描述 生产厂家 企业 LOGO 操作

SILICON TRANSISTORS

Silicon Transistors 2N3854, A, 2N3855, A, 2N3856, A, are NPN silicon planar epitaxial passivated transistors designed primarily for RF, IF and converter applicaitons in AM and FM receivers. Selected high voltage units are available for TV video amplifiers. (See typical BVceo)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRANSISTORS

Silicon Transistors 2N3854, A, 2N3855, A, 2N3856, A, are NPN silicon planar epitaxial passivated transistors designed primarily for RF, IF and converter applicaitons in AM and FM receivers. Selected high voltage units are available for TV video amplifiers. (See typical BVceo)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRANSISTORS

Silicon Transistors 2N3854, A, 2N3855, A, 2N3856, A, are NPN silicon planar epitaxial passivated transistors designed primarily for RF, IF and converter applicaitons in AM and FM receivers. Selected high voltage units are available for TV video amplifiers. (See typical BVceo)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRANSISTORS

Silicon Transistors 2N3854, A, 2N3855, A, 2N3856, A, are NPN silicon planar epitaxial passivated transistors designed primarily for RF, IF and converter applicaitons in AM and FM receivers. Selected high voltage units are available for TV video amplifiers. (See typical BVceo)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRANSISTOR

Silicon Transistors 2N3854, A, 2N3855, A, 2N3856, A, are NPN silicon planar epitaxial passivated transistors designed primarily for RF, IF and converter applicaitons in AM and FM receivers. Selected high voltage units are available for TV video amplifiers. (See typical BVceo)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRANSISTORS

Silicon Transistors 2N3854, A, 2N3855, A, 2N3856, A, are NPN silicon planar epitaxial passivated transistors designed primarily for RF, IF and converter applicaitons in AM and FM receivers. Selected high voltage units are available for TV video amplifiers. (See typical BVceo)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRANSISTORS

Silicon Transistors 2N3854, A, 2N3855, A, 2N3856, A, are NPN silicon planar epitaxial passivated transistors designed primarily for RF, IF and converter applicaitons in AM and FM receivers. Selected high voltage units are available for TV video amplifiers. (See typical BVceo)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRANSISTORS

Silicon Transistors The GE/RCA 2N3858, 2N3859 and 2N3860 are planar epitaxial passivated NPN silicon transistors designed primarlly for AM radio I.F. and converter applications. These types are supplied in JEDEC to-98 package.

GESS

SILICON TRANSISTORS

Silicon Transistors The GE/RCA 2N3858, 2N3859 and 2N3860 are planar epitaxial passivated NPN silicon transistors designed primarlly for AM radio I.F. and converter applications. These types are supplied in JEDEC to-98 package.

GESS

SILICON TRANSISTORS

Silicon Transistors The GE/RCA 2N3858, 2N3859 and 2N3860 are planar epitaxial passivated NPN silicon transistors designed primarlly for AM radio I.F. and converter applications. These types are supplied in JEDEC to-98 package.

GESS

Silicon Transistors

Silicon Transistors NPN

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRANSISTORS

Silicon Transistors The GE/RCA 2N3858, 2N3859 and 2N3860 are planar epitaxial passivated NPN silicon transistors designed primarlly for AM radio I.F. and converter applications. These types are supplied in JEDEC to-98 package.

GESS

NPN General Purpose Amplifier

NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 10. • See PN100 for characteristics.

FAIRCHILD

仙童半导体

Small Signal Transistors

Small Signal Transistors

CENTRAL

Silicon Transistors

Silicon Transistors NPN

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

封装/外壳:TO-210AA,TO-59-4,接线柱 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

封装/外壳:TO-210AA,TO-59-4,接线柱 包装:散装 描述:POWER BJT 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

Trans GP BJT NPN 40V 5A 3-Pin TO-59

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans GP BJT NPN 80V 5A 3-Pin TO-59

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans GP BJT NPN 80V 5A 3-Pin TO-59

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN General Purpose Amplifier

文件:59.13 Kbytes Page:3 Pages

FAIRCHILD

仙童半导体

NPN General Purpose Amplifier

文件:59.13 Kbytes Page:3 Pages

FAIRCHILD

仙童半导体

SILICON NPN TRANSISTOR

文件:316.24 Kbytes Page:3 Pages

CENTRAL

2N385产品属性

  • 类型

    描述

  • Maximum Power Dissipation:

    30000mW

  • Maximum DC Collector Current:

    5A

  • Maximum Collector Emitter Voltage:

    40V

  • Maximum Collector Emitter Saturation Voltage:

    0.5@0.2mA@1mAV

  • Configuration:

    Single

  • Category:

    Bipolar Power

更新时间:2026-5-15 9:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MCEL
25+
1534
全新原装现货库存
MOT
24+
CAN3
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
MOTOROLA/摩托罗拉
24+
TO-39
315
现货供应
FAIRCHI
18+
TO-92
85600
保证进口原装可开17%增值税发票
onsemi(安森美)
25+
TO-92-3
20948
样件支持,可原厂排单订货!
MOTOROLA
24+
CAN3
1200
原装现货假一罚十
onsemi(安森美)
25+
TO-92-3
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
MOTOROLA/摩托罗拉
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
ST
24+/25+
16
原装正品现货库存价优
MOTOROLA
23+
TO-2
3200
专营高频管模块,全新原装!

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