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2N3817A

PNP SILICON DIFFERENTIAL AMPLIFIERS

DUAL PNP SILICON ANNULAR TRANSISTORS PNP SILICON DIFFERENTIAL AMPLIFIERS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N3817A

Transistors

DUAL PNP SILICON ANNULAR TRANSISTORS PNP SILICON DIFFERENTIAL AMPLIFIERS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N3817A

Trans GP BJT PNP 60V 0.05A 6-Pin TO-78

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N3817A

DUAL AMPLIFIER TRANSISTOR

文件:104.72 Kbytes Page:3 Pages

MOTOROLA

摩托罗拉

Transistors

DUAL PNP SILICON ANNULAR TRANSISTORS PNP SILICON DIFFERENTIAL AMPLIFIERS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N3817A产品属性

  • 类型

    描述

  • Maximum Power Dissipation:

    350mW

  • Maximum Operating Temperature:

    200°C

  • Maximum Emitter Base Voltage:

    5V

  • Maximum DC Collector Current:

    0.05A

  • Maximum Collector Emitter Voltage:

    60V

  • Maximum Collector Emitter Saturation Voltage:

    0.2@10uA@100uA

  • Maximum Collector Base Voltage:

    60V

  • Material:

    Si

  • Configuration:

    Dual

  • Category:

    Bipolar Power

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