Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

DUAL PNP SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3810 and 2N3810A are dual silicon PNP transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. MARKING: FULL PART NUMBER

PNP SILICON DIFFERENTIAL AMPLIFIERS

DUAL PNP SILICON ANNULAR TRANSISTORS PNP SILICON DIFFERENTIAL AMPLIFIERS

SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS

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Through-Hole Transistor-Small Signal (<=1A) Dual PNP Low Noise Amplifier

SILICON DUAL PNP TRANSISTORS

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Monolithic Dual Matched PNP General Purpose Amplifier

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PNP SILICON DUAL TRANSISTOR

PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500/336

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

Chip Type 2C2605 Geometry 0220 Polarity NPN

Chip type 2C2605 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high speed switching applications. Features: • High speed switching capabilities

Type 2N3810 Geometry 0220 Polarity PNP

Chip type 2C2605 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high speed switching applications. Features: • High speed switching capabilities

Silicon PNP Transistor

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