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2N372晶体管资料

  • 2N372别名:2N372三极管、2N372晶体管、2N372晶体三极管

  • 2N372生产厂家:美国无线电公司

  • 2N372制作材料:Ge-PNP

  • 2N372性质:射频/高频放大 (HF)

  • 2N372封装形式:直插封装

  • 2N372极限工作电压:24V

  • 2N372最大电流允许值:0.01A

  • 2N372最大工作频率:30MHZ

  • 2N372引脚数:4

  • 2N372最大耗散功率:0.08W

  • 2N372放大倍数

  • 2N372图片代号:C-36

  • 2N372vtest:24

  • 2N372htest:30000000

  • 2N372atest:0.01

  • 2N372wtest:0.08

  • 2N372代换 2N372用什么型号代替:AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,3AG54A,

2N372价格

参考价格:¥18.8461

型号:2N3724 品牌:Centralr 备注:这里有2N372多少钱,2026年最近7天走势,今日出价,今日竞价,2N372批发/采购报价,2N372行情走势销售排行榜,2N372报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N372

GERMANIUM PNP TRANSISTORS

文件:2.44311 Mbytes Page:6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Small Signal Transistors

Small Signal Transistors TO-39 Case

CENTRAL

Silicon PNP Power Transistors

DESCRIPTION: These power transistors are produced by PPCs DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use

MICROSEMI

美高森美

POWER TRANSISTORS PNP SILICON

3 AMPERE POWER TRANSISTORS PNP SILICON 40, 60, 80 VOLTS 6 WATTS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SI NPN LO-PWR BJT

Description : Si NPN Lo-Pwr BJT

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

Small Signal Transistors TO-39 Case

CENTRAL

NPN SMALL SIGNAL HIGH VOLTAGE HIGH CURRENT SWIRCHES

NPN SMALL SIGNAL HIGH VOLTAGE HIGH CURRENT SWIRCHES

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH SPEED NPN SILICON PLANAR EPITAXIAL

HIGH SPEED NPN SILICON PLANAR EPITAXIAL HIGH-VOLTAGE HIGH-CURRENT TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON TRANSISTOR

NPN METAL CAN - SATURATED SWITCH NPN METAL CAN - LOW NOISE LEVEL AMPLIFIER

CENTRAL

Small Signal Transistors

Small Signal Transistors TO-39 Case

CENTRAL

NPN SILICON TRANSISTOR

NPN METAL CAN - SATURATED SWITCH NPN METAL CAN - LOW NOISE LEVEL AMPLIFIER

CENTRAL

HIGH SPEED NPN SILICON PLANAR EPITAXIAL

HIGH SPEED NPN SILICON PLANAR EPITAXIAL HIGH-VOLTAGE HIGH-CURRENT TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH VOLTAGE, HIGH CURRENT SWITCH

DESCRIPTION The 2N3725 is a silicon planar epitaxial transistor in TO-39 metal case It is a high-voltage, high current switch used for memory applications requiring breakdown voltages up to 50 V and operating currents to 1 A. Fast switching times are assured because of the high minimum fT (300 MH

STMICROELECTRONICS

意法半导体

EPITAXIAL PLANAR NPN

EPITAXIAL PLANAR NPN HIGH-VOLTAGE, HIGH-CURRENT SWITCH

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON TRANSISTOR

NPN METAL CAN - SATURATED SWITCH NPN METAL CAN - LOW NOISE LEVEL AMPLIFIER

CENTRAL

Small Signal Transistors

Small Signal Transistors TO-39 Case

CENTRAL

PNP DUAL SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3726, 2N3727 types are silicon PNP dual transistors manufactured by the epitaxial planar process utilizing 2 individual chips mounted in a hermetically sealed metal cas designed for differential amplifier applications.

CENTRAL

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

CENTRAL

SI PNP LO-PWR BJT

Description: Si PNP Lo-Pwr BJT

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP SILICON AMPLIFIER TRANSISTORS

PNP SILICON AMPLIFIER TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

CENTRAL

PNP DUAL SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3726, 2N3727 types are silicon PNP dual transistors manufactured by the epitaxial planar process utilizing 2 individual chips mounted in a hermetically sealed metal cas designed for differential amplifier applications.

CENTRAL

NPN HIGH PERFORMANCE DIFFERENTIAL AMPLIFIERS

NPN HIGH PERFORMANCE DIFFERENTIAL AMPLIFIERS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP SILICON TRANSISTOR

文件:27.9 Kbytes Page:2 Pages

SEME-LAB

Trans GP BJT PNP 60V 3A 3-Pin TO-5

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

封装/外壳:TO-205AA,TO-5-3 金属罐 包装:管件 描述:TRANS NPN 30V 1A TO5 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

包装:卷带(TR) 描述:NPN POWER SILICON TRANSISTOR 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MICROCHIP

微芯科技

NPN Transistor

MICROCHIP

微芯科技

NPN SS HIGH CURRENT HS SWITCH

ONSEMI

安森美半导体

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

文件:15.35 Kbytes Page:1 Pages

SEME-LAB

General Purpose Transistors

文件:121.76 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

NPN SILICON TRANSISTOR

文件:497.69 Kbytes Page:2 Pages

CENTRAL

NPN SILICON TRANSISTOR

文件:497.69 Kbytes Page:2 Pages

CENTRAL

General Purpose Transistors

文件:121.76 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Bipolar NPN Device in a Hermetically sealed TO39

文件:16.16 Kbytes Page:1 Pages

SEME-LAB

HIGH VOLTAGE, HIGH CURRENT, HIGH SPEED, NPN SWITCHING

文件:28.93 Kbytes Page:2 Pages

SEME-LAB

General Purpose Transistors

文件:121.76 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

NPN - General Purpose Transistor Die

文件:686.46 Kbytes Page:6 Pages

CENTRAL

NPN - General Purpose Transistor Die

文件:686.63 Kbytes Page:6 Pages

CENTRAL

NPN SILICON TRANSISTOR

文件:497.69 Kbytes Page:2 Pages

CENTRAL

NPN SILICON TRANSISTOR

文件:497.69 Kbytes Page:2 Pages

CENTRAL

NPN - General Purpose Transistor Die

文件:686.63 Kbytes Page:6 Pages

CENTRAL

NPN - General Purpose Transistor Die

文件:686.46 Kbytes Page:6 Pages

CENTRAL

General Purpose Transistors

文件:121.76 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Medium Current General Purpose Amplifiers and Switches

文件:777.48 Kbytes Page:12 Pages

RAYTHEON

雷神

PNP DUAL SILICON TRANSISTOR

文件:112.24 Kbytes Page:2 Pages

CENTRAL

PNP DUAL SILICON TRANSISTOR

文件:112.24 Kbytes Page:2 Pages

CENTRAL

PNP DUAL SILICON TRANSISTOR

文件:112.24 Kbytes Page:2 Pages

CENTRAL

Medium Current General Purpose Amplifiers and Switches

文件:777.48 Kbytes Page:12 Pages

RAYTHEON

雷神

2N372产品属性

  • 类型

    描述

  • Maximum Transition Frequency:

    90(Typ)MHz

  • Maximum Power Dissipation:

    1000mW

  • Maximum Operating Temperature:

    200°C

  • Maximum Emitter Base Voltage:

    4V

  • Maximum DC Collector Current:

    3A

  • Maximum Collector Emitter Voltage:

    60V

  • Maximum Collector Emitter Saturation Voltage:

    0.75@100mA@1A

  • Maximum Collector Base Voltage:

    60V

  • Material:

    Si

  • Configuration:

    Single

  • Category:

    Bipolar Power

更新时间:2026-5-15 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi
25+
TO-5
11580
正规渠道,免费送样。支持账期,BOM一站式配齐
Microchip Technology / Atmel
25+
TO-39-3
6843
样件支持,可原厂排单订货!
ST/意法
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ST/意法
2026+
CNA3
54648
百分百原装现货 实单必成 欢迎询价
MOTOROLA/摩托罗拉
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
MOT
24+
CAN6
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
STM
23+
NA
408
专做原装正品,假一罚百!
ST
24+
TO-39
5000
只做原装正品现货 欢迎来电查询15919825718
MOTOROLA
CAN6
35560
一级代理 原装正品假一罚十价格优势长期供货
Raytheon
25+
37
公司优势库存 热卖中!!

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