Silicon planar epitaxial overlay transistor

DESCRIPTION The device is a silicon NPN overlay transistor in a TO-39 metal package with the collector connected to the case. APPLICATIONS • The 2N3553 is intended for use in VHF and UHF transmitting applications.

NPN SILICON RF TRANSISTOR

DESCRIPTION: The ASI 2N3553is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency.

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

VHF SILICON NPN POWER TRANSISTOR

VHF Silicon NPN Power Transistor The 2N3553 is a silicon epitaxial planar transistor of NPN structure. This device is intended for large signal, high power oscillator-amplifier application in the VHF-UHF (100MC to 400MC) region. The 2N3553 transistor utilizes a multi-emitter structure consisting

NPN SILICON POWER TRANSISTORS

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NPN SILICON HIGH

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Silicon planar epitaxial overlay transistor

GERMANIUM PNP TRANSISTORS

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