NPN LOW POWER SILICON TRANSISTOR

NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368

Low Power Transistor

Low Power Transistor NPN Silicon Features • MIL−PRF−19500/368 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military Temperature Range Screening

HIGH VOLTAGE AMPLIFIERS

HIGH VOLTAGE AMPLIFIERS

NPN HIGH VOLTAGE SILICON TRANSISTORS

High Voltage Silicon Planar Transistors used in High Voltage & High Power Amplifier Applications.

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

HIGH VOLTAGE TRANSISTOR

HIGH VOLTAGE TRANSISTOR The 2N3439 and 2N3440 are high voltage silicon epitaxial transistors mounted in TO-39 metal package. They are intended for use in power amplifier, in consumer and industrial line-operated applications. These devices are particularity suited as drives in high voltage lo

NPN LOW POWER TRANSISTORS - 1

KEY FEATURES ■ JAN/JANTX/JANTXV STANDARD PRODUCTS ■ QUALIFIED PER MIL-PRF-19500/368 ■ LOW ON RESISTANCE ■ FAST SWITCHING ■ HIGH OFF ISOLATION ■ SECOND SOURCE FOR MICROSEMI ■ DESIGNED FOR HIGH-VOLTAGE LOW CURRENT INVERTERS & HIGH FREQUENCY SWITCHING WITH SMALL PACKAGE

High Voltage Transistor

Features: • NPN High Voltage Silicon Transistor • High Voltage Silicon Planar Transistors used in High Voltage and High Power Amplifier Applications Description Transistor, NPN, TO-39

Power Transistors

Power Transistors

SPRINGFIELD, NEW JERSEY 07081

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

High-Voltage Silicon N-P-N Transistors

NPN TO-39/TO-5

NPN TO-39/TO-5 Case 801 I(MAX) = 0.05 to 10 A VCEO(sus) = 40 • 800V fT = 1 to 50 MHz

SILICON NPN TRANSISTORS

DESCRIPTION The 2N3439 and 2N3440 are silicon epitaxial planar NPN transistors in jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators

HIGH VOLTAGE NPN TRANSISTORS

Hermetic TO39 Package High Voltage Ideally suited for drivers in high voltage low current inverters, switching and series regulators High Reliability Screening Options Available

HIGH VOLTAGE NPN TRANSISTORS

Hermetic TO39 Package High Voltage Ideally suited for drivers in high voltage low current inverters, switching and series regulators High Reliability Screening Options Available

Transistor GP BJT NPN 3-Pin 250V, 1A, 800mW TO-39 Bag

This family of 2N3439 through 2N3440, high-frequency, epitaxial planar NPN transistors have a low saturation voltage, and are military qualified up to the JANS level for high-reliability applications. These transistors are available in a TO-205AD (TO-39) ,no suffix, a TO-205AA (TO-5), L suffix and JEDEC registered 2N3439 through 2N3440 series.JANHC, JANKC, JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/368\nRoHS compliant versions available (commercial grade only)\nVCE(sat) = 0.5 V @ IC = 50 mA\nTurn-On time ton = 1.0 µs max @ IC = 20 mA, IB1 = 2.0 mA\nTurn-Off ti;

NPN LOW POWER SILICON TRANSISTOR

NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368

NPN LOW POWER SILICON TRANSISTOR

NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/369

SILICON POWER TRANSISTOR

SILICON POWER TRANSISTOR The 2N3441 are NPN transistors mounted in TO-66 metal package with the collector connected to the case . They are intended for use in general purpose switching and amplifier applications. Compliance to RoHS.

POWER TRANSISTORS(3A,140V,25W)

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Continuous collector current-IC=3A • Power dissipation -PD=25W @TC=25℃ APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as: • Driver for high power outputs • Series and shunt regulators • Audio and servo amplifiers

ELECTRICAL CHARACTERISTICS

NPN SILICON POWER TRANSISTOR

Silicon NPN Power Transistors

DESCRIPTION • With TO-66 package • Continuous collector current-IC=3A • Power dissipation -PD=25W @TC=25℃ APPLICATIONS For use in general-purpose switching and Linear amplifier applications such as: • Driver for high power outputs • Series and shunt regulators • Audio and servo amplifiers

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 140V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): 1.0V(Max) @IC= 0.5A APPLICATIONS · Switching Regulators · DC-DC Converter · Inverters

Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 140V(Min.) • Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max)@ lc = 10A APPLICATIONS • Designed for use in industrial and commercial equipment including high fidelity audio

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Excellent safe operating area APPLICATIONS • For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications

POWER TRANSISTORS

HIGH-POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. • Collector-Emitter Sustaining Voltage VCEO(sus) = 120 V (Min.) – 2N4347

10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS 117 WATTS

NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. • Collector –Emitter Sustaining Voltage — VCEO(sus) = 140 Vdc (Min) • Excellent Second Breakdown Capability

Single diffused npn siliconpower transistor

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3442 is a Silicon NPN Single Diffused (Hometaxial) High Voltage Power Transistor designed for high voltage, high power amplifier applications.

HIGH POWER INDUSTRIAL TRANSISTORS

High-Voltage Silicon N-P-N Transistors High-Power Devices for Applicatons in Industrial and Commercial Equipment

HIGH POWER INDUSTRIAL TRANSISTORS

HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. • Low Collector-Emitter Saturation Voltage – VCE(sat) = 1.0 Vdc (Max) @ IC = 2

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Excellent safe operating area APPLICATIONS • For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications

HIGH-POWER INDUSTRIAL TRANSISTORS

HIGH-POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. • Collector-Emitter Sustaining Voltage VCEO(sus) = 120 V (Min.) – 2N4347

NPN HIGH POWER SILICON TRANSISTOR

NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/370 Collector-Emitter Voltage VCEO 140Vdc Collector-Base Voltage VCBO 160Vdc Collector-Emitter Voltage VCER 150Vdc Emitter-Base Voltage VEBO 7.0Vdc Base Current IB 7.0Adc

High?뭁ower Industrial Transistors

High−Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Features • Collector −Emitter Sustaining Voltage − VCEO(sus) = 140 Vdc (Min)

High?뭁ower Industrial Transistors

High−Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Features • Collector −Emitter Sustaining Voltage − VCEO(sus) = 140 Vdc (Min)

Small Signal Transistors

Small Signal Transistors TO-39 Case

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Excellent safe operating area APPLICATIONS • Designed for medium-switching and amplifier applications.

SPRINGFIELD, NEW JERSEY 07081

HIGH-SPEED SILICON ANNULAR NPN POWER TRANSISTORS ... for switching and amplifier applications 7.5 AMPERER POWER TRANSISTORS SILICON PNP 60-80 VOLTS 115 WATTS

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Excellent safe operating area APPLICATIONS • Designed for medium-switching and amplifier applications.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Excellent safe operating area APPLICATIONS • Designed for medium-switching and amplifier applications.

Silicon NPN Power Transistor

HIGH-SPEED SILICON ANNULAR NPN POWER TRANSISTORS ... for switching and amplifier applications 7.5 AMPERER POWER TRANSISTORS SILICON PNP 60-80 VOLTS 115 WATTS

Silicon NPN Power Transistor

HIGH-SPEED SILICON ANNULAR NPN POWER TRANSISTORS ... for switching and amplifier applications 7.5 AMPERER POWER TRANSISTORS SILICON PNP 60-80 VOLTS 115 WATTS

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Excellent safe operating area APPLICATIONS • Designed for medium-switching and amplifier applications.

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Excellent safe operating area APPLICATIONS • Designed for medium-switching and amplifier applications.

SPRINGFIELD, NEW JERSEY 07081

HIGH-SPEED SILICON ANNULAR NPN POWER TRANSISTORS ... for switching and amplifier applications 7.5 AMPERER POWER TRANSISTORS SILICON PNP 60-80 VOLTS 115 WATTS

Silicon Epitaxial Planar NPN transistor

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NPN LOW POWER SILICON TRANSISTOR

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封装/外壳：TO-205AD，TO-39-3 金属罐 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 250V 1A TO39 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-205AD，TO-39-3 金属罐 包装：管件 描述：TRANS NPN 250V 1A TO39 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar Junction Transistors

Bipolar Power Transistors

SILICON NPN TRANSISTORS

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SILICON PLANAR EPITAXIAL NPN TRANSISTOR

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