HIGH POWER INDUSTRIAL TRANSISTORS

High-Voltage Silicon N-P-N Transistors High-Power Devices for Applicatons in Industrial and Commercial Equipment

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Excellent safe operating area APPLICATIONS • For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3 package • Excellent safe operating area APPLICATIONS • For industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches applications

HIGH POWER INDUSTRIAL TRANSISTORS

HIGH POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. • Low Collector-Emitter Saturation Voltage – VCE(sat) = 1.0 Vdc (Max) @ IC = 2

Single diffused npn siliconpower transistor

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3442 is a Silicon NPN Single Diffused (Hometaxial) High Voltage Power Transistor designed for high voltage, high power amplifier applications.

NPN HIGH POWER SILICON TRANSISTOR

NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/370 Collector-Emitter Voltage VCEO 140Vdc Collector-Base Voltage VCBO 160Vdc Collector-Emitter Voltage VCER 150Vdc Emitter-Base Voltage VEBO 7.0Vdc Base Current IB 7.0Adc

POWER TRANSISTORS

HIGH-POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. • Collector-Emitter Sustaining Voltage VCEO(sus) = 120 V (Min.) – 2N4347

10 AMPERE POWER TRANSISTOR NPN SILICON 140 VOLTS 117 WATTS

NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. • Collector –Emitter Sustaining Voltage — VCEO(sus) = 140 Vdc (Min) • Excellent Second Breakdown Capability

HIGH-POWER INDUSTRIAL TRANSISTORS

HIGH-POWER INDUSTRIAL TRANSISTORS NPN silicon transistors designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunts regulators and power switches. • Collector-Emitter Sustaining Voltage VCEO(sus) = 120 V (Min.) – 2N4347

High?뭁ower Industrial Transistors

High−Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Features • Collector −Emitter Sustaining Voltage − VCEO(sus) = 140 Vdc (Min)

Silicon NPN Power Transistor

DESCRIPTION • Excellent Safe Operating Area • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 140V(Min.) • Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max)@ lc = 10A APPLICATIONS • Designed for use in industrial and commercial equipment including high fidelity audio

NPN Silicon High-Power 140V, 10A

This specification covers the performance requirements for NPN silicon, high-power 2N3442 transistor. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/370.The device package style is TO-204AA (formerly TO-3).

GERMANIUM PNP TRANSISTORS

文件：2.44311 Mbytes Page：6 Pages

封装/外壳：TO-204AA，TO-3 包装：管件 描述：TRANS NPN 140V 10A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

包装：散装 描述：NPN POWER SILICON TRANSISTORS 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

三极管

Bipolar Power Transistors

HIGH POWER INDUSTRIAL TRANSISTORS

文件：80.6 Kbytes Page：3 Pages

Silicon NPN Power Transistors

文件：112.32 Kbytes Page：3 Pages

High?뭁ower Industrial Transistors

High−Power Industrial Transistors NPN silicon power transistor designed for applications in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Features • Collector −Emitter Sustaining Voltage − VCEO(sus) = 140 Vdc (Min)

HIGH POWER INDUSTRIAL TRANSISTORS

文件：80.6 Kbytes Page：3 Pages