Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

SPRINGFIELD, NEW JERSEY 07081

GENERAL PURPOSE TRANSISTOR NPN SILICON

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

SPRINGFIELD, NEW JERSEY 07081

GENERAL PURPOSE TRANSISTOR NPN SILICON

alloy-junction germanium transistors

[INTEX/ SEMITRONICS CORP] alloy-junction germanium transistors

SILICON TRANSISTORS

SILICON TRANSISTORS

NPN Silicon Diffused Transistors

NPN Silicon Diffused Transistors

SPRINGFIELD, NEW JERSEY 07081

Description: Ge PNP Lo-Pwr BJT

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS

FOR SMALL-SIGNAL, LOW-NOISE APPLICATIONS • Active Elements Insulated from Case • High input Impedance (> 5 megohms at 1kc)

NPN Silicon Diffused Transistors

NPN Silicon Diffused Transistors

SILICON TRANSISTORS

SILICON TRANSISTORS

NPN Silicon Diffused Transistors

NPN Silicon Diffused Transistors

P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS

FOR SMALL-SIGNAL, LOW-NOISE APPLICATIONS • Active Elements Insulated from Case • High input Impedance (> 5 megohms at 1kc)

P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS

FOR SMALL-SIGNAL, LOW-NOISE APPLICATIONS • Active Elements Insulated from Case • High input Impedance (> 5 megohms at 1kc)

P-CHANNEL JFET MANUFATURER

FOR SMALL-SIGNAL, LOW-NOISE APPLICATIONS • Active Elements Insulated from Case • High input Impedance (> 5 megohms at 1kc)

P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS

FOR SMALL-SIGNAL, LOW-NOISE APPLICATIONS • Active Elements Insulated from Case • High input Impedance (> 5 megohms at 1kc)

NPN Silicon Diffused Transistors

NPN Silicon Diffused Transistors

SILICON TRANSISTORS

SILICON TRANSISTORS

NPN Silicon Diffused Transistors

NPN Silicon Diffused Transistors

SI NPN LO-PWR BJT MANUFACTURER

Description: Si NPN Lo-Pwr BJT

Doubles transistors PNP silicium Planar epitaxiaux

Dual PNP Silicon transistors Epitaxial planar • Low noise differential applification • Complementary transistors of 2N 2639 at 2N 2641

SI PNP LO-PWR BJT

Dual PNP Silicon transistors Epitaxial planar • Low noise differential applification • Complementary transistors of 2N 2639 at 2N 2641

Doubles transistors PNP silicium Planar epitaxiaux

Dual PNP Silicon transistors Epitaxial planar • Low noise differential applification • Complementary transistors of 2N 2639 at 2N 2641

Dual Bipolar PNP Devices in a hermetically sealed

Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability Applications Dual Bipolar PNP Devices. VCEO = 45V IC = 0.03A

Doubles transistors PNP silicium Planar epitaxiaux

Dual PNP Silicon transistors Epitaxial planar • Low noise differential applification • Complementary transistors of 2N 2639 at 2N 2641

Dual Bipolar PNP Devices in a hermetically sealed

Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability Applications Dual Bipolar PNP Devices. VCEO = 45V IC = 0.03A

NPN Silicon Diffused Transistors

NPN Silicon Diffused Transistors

NPN Silicon Diffused Transistors

NPN Silicon Diffused Transistors

SILICON TRANSISTORS

SILICON TRANSISTORS

Dual Bipolar PNP Devices in a hermetically sealed

Dual Bipolar PNP Devices. VCEO = 40V IC = 0.2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications.

NPN Silicon Diffused Transistors

NPN Silicon Diffused Transistors

SILICON TRANSISTORS

SILICON TRANSISTORS

NPN Silicon Diffused Transistors

NPN Silicon Diffused Transistors

N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES

General-Purpose Device Types

NPN Silicon Diffused Transistors

NPN Silicon Diffused Transistors

SILICON TRANSISTORS

SILICON TRANSISTORS

SI NPN LO-PRW BJT

Description: Si NPN Lo-Pwr BJT

N - CHANNEL JFETS GENERAL - PURPOSE DEVICE TYPES

General-Purpose Device Types

silicon transistors UHF/VHF power transistors

silicon transistors UHF/VHF power transistors NPN type germanium transistors diffused-base MESA transistors ultra-high-speed switching

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2N3375 is Designed for Class A,B,C Amplifier,Oscillator and Driver Applications Covering the VHF-UHF Region. FEATURES INCLUDE: • Isolated Package

RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND

RF & MICROWAVE TRANSISTOR VHF-UHF CLASS C WIDE BAND

RF & MICROWAVE TRANSISTORS

RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND

SPRINGFIELD, NEW JERSEY 07081

JFEET TRANSISTORS

SILICON TRANSISTORS

SILICON TRANSISTORS

P-CHANNEL DIFFUSED SILICON FIELD-EFFECT TRANSISTOR

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

SILICON TRANSISTORS

SILICON TRANSISTORS

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

N-P-N GROWN SILICON TRANSISTORS

N-P-N GROWN SILICON TRANSISTORS

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

NPN General Purpose Amplifier

NPN General PurposeAmplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10.

SILICON TRANSISTORS

Silicon Transistors The GE/RCA 2N3390-94, 2N3391A are planar, passivated NPN silicon transistors design for use in general-purpose and high gain or driver applications. These types are supplied in JEDEC TO-98 package.

SILICON TRANSISTORS

Silicon Transistors The GE/RCA 2N3390-94, 2N3391A are planar, passivated NPN silicon transistors design for use in general-purpose and high gain or driver applications. These types are supplied in JEDEC TO-98 package.

SPRINGFIELD, NEW JERSEY 07081

NPN General Purpose Amplifier

NPN SILICON TRANSISTORS

NPN General PurposeAmplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10.

NPN General Purpose Amplifier

NPN General PurposeAmplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10.

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.