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2N339晶体管资料
2N339别名:2N339三极管、2N339晶体管、2N339晶体三极管
2N339生产厂家:美国电子晶体管公司_美国晶体管有限公司_美国得克萨
2N339制作材料:Si-NPN
2N339性质:低频或音频放大 (LF)_TR
2N339封装形式:直插封装
2N339极限工作电压:55V
2N339最大电流允许值:0.06A
2N339最大工作频率:<1MHZ或未知
2N339引脚数:3
2N339最大耗散功率:1W
2N339放大倍数:
2N339图片代号:D-9
2N339vtest:55
2N339htest:999900
- 2N339atest:0.06
2N339wtest:1
2N339代换 2N339用什么型号代替:BC104,BC302,3DG180A,
2N339价格
参考价格:¥0.0000
型号:2N3390 品牌:Genteq 备注:这里有2N339多少钱,2025年最近7天走势,今日出价,今日竞价,2N339批发/采购报价,2N339行情走势销售排行榜,2N339报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
2N339 | NPN General Purpose Amplifier NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. | Fairchild 仙童半导体 | ||
2N339 | SILICON TRANSISTORS SILICON TRANSISTORS | ASI | ||
2N339 | N-P-N GROWN SILICON TRANSISTORS N-P-N GROWN SILICON TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
2N339 | NPN General Purpose Amplifier | ONSEMI 安森美半导体 | ||
SILICON TRANSISTORS Silicon Transistors The GE/RCA 2N3390-94, 2N3391A are planar, passivated NPN silicon transistors design for use in general-purpose and high gain or driver applications. These types are supplied in JEDEC TO-98 package. | GESS | |||
NPN General Purpose Amplifier NPN General PurposeAmplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
NPN General Purpose Amplifier NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. | Fairchild 仙童半导体 | |||
SPRINGFIELD, NEW JERSEY 07081 NPN General Purpose Amplifier | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
SILICON TRANSISTORS Silicon Transistors The GE/RCA 2N3390-94, 2N3391A are planar, passivated NPN silicon transistors design for use in general-purpose and high gain or driver applications. These types are supplied in JEDEC TO-98 package. | GESS | |||
NPN SILICON TRANSISTORS NPN General PurposeAmplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
NPN General Purpose Amplifier NPN General PurposeAmplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
NPN General Purpose Amplifier NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. | Fairchild 仙童半导体 | |||
NPN General Purpose Amplifier NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. | Fairchild 仙童半导体 | |||
Small Signal Transistors Small Signal Transistors | Central | |||
NPN General Purpose Amplifier NPN General PurposeAmplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
NPN General Purpose Amplifier NPN General PurposeAmplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Small Signal Transistors Small Signal Transistors | Central | |||
NPN General Purpose Amplifier NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. | Fairchild 仙童半导体 | |||
NPN General Purpose Amplifier NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics. | Fairchild 仙童半导体 | |||
NPN General Purpose Amplifier NPN General PurposeAmplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Small Signal Transistors Small Signal Transistors | Central | |||
NPN General Purpose Amplifier NPN General PurposeAmplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
NPN SILICON TRANSISTORS NPN Silicon Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Small Signal Transistors Small Signal Transistors | Central | |||
Small Signal Transistors Small Signal Transistors | Central | |||
NPN SILICON TRANSISTORS NPN Silicon Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
NPN SILICON TRANSISTORS NPN Silicon Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Small Signal Transistors Small Signal Transistors | Central | |||
Small Signal Transistors Small Signal Transistors | Central | |||
NPN SILICON TRANSISTORS NPN Silicon Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
NPN General Purpose Amplifier 文件:297.55 Kbytes Page:7 Pages | Fairchild 仙童半导体 | |||
NPN General Purpose Amplifier 文件:297.55 Kbytes Page:7 Pages | Fairchild 仙童半导体 | |||
封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:散装 描述:TRANS NPN 25V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
SPRINGFIELD, NEW JERSEY 07081 | NJS | |||
General Purpose Bipolar Transistor | NJS | |||
NPN General Purpose Amplifier 文件:297.55 Kbytes Page:7 Pages | Fairchild 仙童半导体 | |||
SILICON NPN TRANSISTORS 文件:329.12 Kbytes Page:2 Pages | Central | |||
NPN General Purpose Amplifier 文件:297.55 Kbytes Page:7 Pages | Fairchild 仙童半导体 | |||
封装/外壳:TO-226-3,TO-92-3 标准主体(!--TO-226AA) 包装:散装 描述:TRANS NPN 25V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
SILICON NPN TRANSISTORS 文件:329.12 Kbytes Page:2 Pages | Central | |||
NPN General Purpose Amplifier 文件:297.55 Kbytes Page:7 Pages | Fairchild 仙童半导体 | |||
SILICON NPN TRANSISTORS 文件:329.12 Kbytes Page:2 Pages | Central | |||
SILICON NPN TRANSISTORS 文件:329.12 Kbytes Page:2 Pages | Central | |||
NPN General Purpose Amplifier 文件:297.55 Kbytes Page:7 Pages | Fairchild 仙童半导体 |
2N339产品属性
- 类型
描述
- 型号
2N339
- 功能描述
两极晶体管 - BJT NPN Gen Pur SS sistors
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
仙童 |
24+ |
TO-92 |
5000 |
||||
TRANSITRON |
新 |
5 |
全新原装 货期两周 |
||||
MOT |
2023+ |
CAN4 |
50000 |
原装现货 |
|||
ON |
23+ |
TO-92 |
1109 |
专注配单,只做原装进口现货 |
|||
JXK/杰信科 |
23+ |
TO-92 |
99999 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
原厂 |
25+ |
1679 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
||||
MOT |
24+ |
CAN3 |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN3 |
1000 |
原装铁帽专营,代理渠道量大可订货 |
|||
MOT |
24+ |
CAN3 |
6540 |
原装现货/欢迎来电咨询 |
2N339规格书下载地址
2N339参数引脚图相关
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2N339数据表相关新闻
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DdatasheetPDF页码索引
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