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2N339晶体管资料

  • 2N339别名:2N339三极管、2N339晶体管、2N339晶体三极管

  • 2N339生产厂家:美国电子晶体管公司_美国晶体管有限公司_美国得克萨

  • 2N339制作材料:Si-NPN

  • 2N339性质:低频或音频放大 (LF)_TR

  • 2N339封装形式:直插封装

  • 2N339极限工作电压:55V

  • 2N339最大电流允许值:0.06A

  • 2N339最大工作频率:<1MHZ或未知

  • 2N339引脚数:3

  • 2N339最大耗散功率:1W

  • 2N339放大倍数

  • 2N339图片代号:D-9

  • 2N339vtest:55

  • 2N339htest:999900

  • 2N339atest:0.06

  • 2N339wtest:1

  • 2N339代换 2N339用什么型号代替:BC104,BC302,3DG180A,

2N339价格

参考价格:¥0.0000

型号:2N3390 品牌:Genteq 备注:这里有2N339多少钱,2026年最近7天走势,今日出价,今日竞价,2N339批发/采购报价,2N339行情走势销售排行榜,2N339报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N339

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

FAIRCHILD

仙童半导体

2N339

SILICON TRANSISTORS

SILICON TRANSISTORS

ASI

2N339

N-P-N GROWN SILICON TRANSISTORS

N-P-N GROWN SILICON TRANSISTORS

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N339

NPN General Purpose Amplifier

ONSEMI

安森美半导体

SILICON TRANSISTORS

Silicon Transistors The GE/RCA 2N3390-94, 2N3391A are planar, passivated NPN silicon transistors design for use in general-purpose and high gain or driver applications. These types are supplied in JEDEC TO-98 package.

GESS

NPN General Purpose Amplifier

NPN General PurposeAmplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

FAIRCHILD

仙童半导体

SPRINGFIELD, NEW JERSEY 07081

NPN General Purpose Amplifier

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRANSISTORS

Silicon Transistors The GE/RCA 2N3390-94, 2N3391A are planar, passivated NPN silicon transistors design for use in general-purpose and high gain or driver applications. These types are supplied in JEDEC TO-98 package.

GESS

NPN SILICON TRANSISTORS

NPN General PurposeAmplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN General Purpose Amplifier

NPN General PurposeAmplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

FAIRCHILD

仙童半导体

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

FAIRCHILD

仙童半导体

Small Signal Transistors

Small Signal Transistors

CENTRAL

NPN General Purpose Amplifier

NPN General PurposeAmplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN General Purpose Amplifier

NPN General PurposeAmplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

Small Signal Transistors

CENTRAL

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

FAIRCHILD

仙童半导体

NPN General Purpose Amplifier

NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

FAIRCHILD

仙童半导体

NPN General Purpose Amplifier

NPN General PurposeAmplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

Small Signal Transistors

CENTRAL

NPN General Purpose Amplifier

NPN General PurposeAmplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON TRANSISTORS

NPN Silicon Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

Small Signal Transistors

CENTRAL

Small Signal Transistors

Small Signal Transistors

CENTRAL

NPN SILICON TRANSISTORS

NPN Silicon Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON TRANSISTORS

NPN Silicon Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

Small Signal Transistors

CENTRAL

Small Signal Transistors

Small Signal Transistors

CENTRAL

NPN SILICON TRANSISTORS

NPN Silicon Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN General Purpose Amplifier

文件:297.55 Kbytes Page:7 Pages

FAIRCHILD

仙童半导体

NPN General Purpose Amplifier

文件:297.55 Kbytes Page:7 Pages

FAIRCHILD

仙童半导体

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:散装 描述:TRANS NPN 25V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

SPRINGFIELD, NEW JERSEY 07081

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

General Purpose Bipolar Transistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN General Purpose Amplifier

文件:297.55 Kbytes Page:7 Pages

FAIRCHILD

仙童半导体

SILICON NPN TRANSISTORS

文件:329.12 Kbytes Page:2 Pages

CENTRAL

NPN General Purpose Amplifier

文件:297.55 Kbytes Page:7 Pages

FAIRCHILD

仙童半导体

封装/外壳:TO-226-3,TO-92-3 标准主体(!--TO-226AA) 包装:散装 描述:TRANS NPN 25V 0.5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

SILICON NPN TRANSISTORS

文件:329.12 Kbytes Page:2 Pages

CENTRAL

NPN General Purpose Amplifier

文件:297.55 Kbytes Page:7 Pages

FAIRCHILD

仙童半导体

SILICON NPN TRANSISTORS

文件:329.12 Kbytes Page:2 Pages

CENTRAL

SILICON NPN TRANSISTORS

文件:329.12 Kbytes Page:2 Pages

CENTRAL

NPN General Purpose Amplifier

文件:297.55 Kbytes Page:7 Pages

FAIRCHILD

仙童半导体

2N339产品属性

  • 类型

    描述

  • Maximum Power Dissipation:

    625mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Emitter Base Voltage:

    5V

  • Maximum DC Collector Current:

    0.5A

  • Maximum Collector Emitter Voltage:

    25V

  • Maximum Collector Base Voltage:

    25V

  • Configuration:

    Single

  • Category:

    Bipolar Small Signal

更新时间:2026-5-15 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi
25+
TO-92-3
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
onsemi
25+
TO-92-3
18746
样件支持,可原厂排单订货!
NS
23+
NA
20000
全新原装假一赔十
MOTOROLA/摩托罗拉
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
MOT
24+
CAN3
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
原厂
25+
1679
百分百原装正品 真实公司现货库存 本公司只做原装 可
原厂
2540+
CAN3
6852
只做原装正品假一赔十为客户做到零风险!!
仙童
24+
TO-92
5000
MOT
2023+
CAN4
50000
原装现货
ON
23+
TO-92
1109
专注配单,只做原装进口现货

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