NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES THE 2N3107 THROUGH 2N3110 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4032, 2N4030.

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

SI NPN LO-PWR BJT MANUFACTURER

Description: Si NPN Lo-Pwr BJT

GENERAL PURPOSE AMPLIFIER AND SWITCH

GENERAL PURPOSE AMPLIFIERS AND SWITCHES The 2N3108 and 2N3110 are NPN transistors mounted in TO-39 metal package. Thev are intended for large signal, low noise industrial applications.

GENERAL PURPOSE AMPLIFIERS AND SWITCHES

GENERAL PURPOSE AMPLIFIERS AND SWITCHES The 2N3108 and 2N3110 are NPN transistors mounted in TO-39 metal package. They are intended for large signal, low noise industrial applications. Compliance to RoHS.

GENERAL PURPOSE AMPLIFIERS AND SWITCHES

GENERAL PURPOSE AMPLIFIERS AND SWITCHES The 2N3108 and 2N3110 are NPN transistors mounted in TO-39 metal package. Thev are intended for large signal, low noise industrial applications.

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES THE 2N3107 THROUGH 2N3110 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4032, 2N4030.

GENERAL PURPOSE AMPLIFIERS AND SWITCHES

GENERAL PURPOSE AMPLIFIERS AND SWITCHES The 2N3108 and 2N3110 are NPN transistors mounted in TO-39 metal package. They are intended for large signal, low noise industrial applications. Compliance to RoHS.

GENERAL PURPOSE AMPLIFIERS AND SWITCHES

GENERAL PURPOSE AMPLIFIERS AND SWITCHES The 2N3108 and 2N3110 are NPN transistors mounted in TO-39 metal package. Thev are intended for large signal, low noise industrial applications.

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3114 is a NPN Silicon Transistor, mounted in a hermetically sealed package, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER

SILICON PLANAR EPITAXIAL NPN TRANSISTOR

Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications Bipolar NPN Device. VCEO = 150V IC = 0.1A

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

SI NPN LO-PWR BJT MANUFACTURER

Description: Si NPN Lo-Pwr BJT

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

PNP SILICON EPITAXIAL TRANSISTORS

PNP Silicon Epitaxial Transistors APPLICATIONS These transistors are designed for use as small signal and medium power amplifiers as well as high speed, high current switching applications.

PNP SILICON EPITAXIAL TRANSISTORS

PNP Silicon Epitaxial Transistors APPLICATIONS These transistors are designed for use as small signal and medium power amplifiers as well as high speed, high current switching applications.

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

NPN SILICON ANNULAR TRANSISTORS

NPN silicon annular transistors for large signal VHF and UHF applications.

SPRINGFIELD NEW JERSEY 07081

NPN Silicon AF Medium Amplifiers and Switches

isc Silicon PNP Power Transistor

DESCRIPTION • Excellent Safe Operating Area • Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • All semelab hermetically sealed products,can be pro

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications

alloy-junction germanium transistors

[INTEX/ SEMITRONICS CORP] alloy-junction germanium transistors

GERMAIUM PNP MESA TRANSISTORS

GERMABIUM PNP MESA TRANSISTORS GERMABIUM PNP SMALL SIGNAL TRANSISTORS

isc Silicon PNP Power Transistor

DESCRIPTION • Excellent Safe Operating Area • With TO-3 package • Low collector saturation voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • For medium-speed switching and amplifier applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications

Bipolar NPN Device in a Hermetically sealed TO39

文件：15.36 Kbytes Page：1 Pages

Bipolar NPN Device in a Hermetically sealed TO39

文件：15.35 Kbytes Page：1 Pages

封装/外壳：TO-205AD，TO-39-3 金属罐 包装：管件 描述：TRANS NPN 60V TO39 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN SS AMP 5W TRANSISTOR

Bipolar NPN Device

文件：11.12 Kbytes Page：1 Pages

General Purpose Transistors

文件：121.76 Kbytes Page：1 Pages

General Purpose Transistors

文件：121.76 Kbytes Page：1 Pages

Bipolar NPN Device in a Hermetically sealed TO39

文件：16.16 Kbytes Page：1 Pages

Bipolar Junction Transistors

Trans GP BJT NPN 150V 3-Pin TO-39 Box

NPN SILICON TRANSISTOR

文件：495.47 Kbytes Page：2 Pages

Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications

文件：10.64 Kbytes Page：1 Pages

SILICON PLANAR EPITAXIAL NPN TRANSISTOR

文件：163.52 Kbytes Page：3 Pages

SILICON PLANAR EPITAXIAL NPN TRANSISTOR

文件：163.52 Kbytes Page：3 Pages

封装/外壳：TO-206AA，TO-18-3 金属罐 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 0.05A TO18 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN SILICON TRANSISTOR

文件：538.75 Kbytes Page：2 Pages

GERMANIUM PNP TRANSISTORS

文件：2.44311 Mbytes Page：6 Pages

GERMANIUM PNP TRANSISTORS

文件：2.44311 Mbytes Page：6 Pages

SI NPN POWER HF BJI MANUFACTURER

文件：97.83 Kbytes Page：1 Pages

Medium Current General Purpose Amplifiers and Switches

文件：777.48 Kbytes Page：12 Pages

Medium Current General Purpose Amplifiers and Switches

文件：777.48 Kbytes Page：12 Pages