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2N31晶体管资料

  • 2N31别名:2N31三极管、2N31晶体管、2N31晶体三极管

  • 2N31生产厂家:美国通用电器公司

  • 2N31制作材料:Ge-NPN

  • 2N31性质:低频或音频放大 (LF)_射频/高频放大 (HF)

  • 2N31封装形式:特殊封装

  • 2N31极限工作电压:30V

  • 2N31最大电流允许值:0.007A

  • 2N31最大工作频率:<1MHZ或未知

  • 2N31引脚数

  • 2N31最大耗散功率:0.1W

  • 2N31放大倍数

  • 2N31图片代号:NO

  • 2N31vtest:30

  • 2N31htest:999900

  • 2N31atest:0.007

  • 2N31wtest:0.1

  • 2N31代换 2N31用什么型号代替:AC124,AC125,AC126,AC127,AF200,AF126,2N3323,2N3324,2N3325,3AG53C,

2N31价格

参考价格:¥19.2827

型号:2N3117 品牌:Centralr 备注:这里有2N31多少钱,2026年最近7天走势,今日出价,今日竞价,2N31批发/采购报价,2N31行情走势销售排行榜,2N31报价。
型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:2N31;Single, PNP, -30V, -3A, Power Transistor with 20V N-MOSFET

文件:1.36947 Mbytes Page:9 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

丝印代码:2N31;Single, PNP, -30V, -3A, Power Transistor with 20V N-MOSFET

文件:1.36947 Mbytes Page:9 Pages

WILLSEMIWill Semiconductor Co.,Ltd.

韦尔股份上海韦尔半导体股份有限公司

SI NPN LO-PWR BJT MANUFACTURER

Description: Si NPN Lo-Pwr BJT

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES THE 2N3107 THROUGH 2N3110 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4032, 2N4030.

MICRO-ELECTRONICS

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

CENTRAL

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

CENTRAL

GENERAL PURPOSE AMPLIFIERS AND SWITCHES

GENERAL PURPOSE AMPLIFIERS AND SWITCHES The 2N3108 and 2N3110 are NPN transistors mounted in TO-39 metal package. They are intended for large signal, low noise industrial applications. Compliance to RoHS.

COMSET

GENERAL PURPOSE AMPLIFIER AND SWITCH

GENERAL PURPOSE AMPLIFIERS AND SWITCHES The 2N3108 and 2N3110 are NPN transistors mounted in TO-39 metal package. Thev are intended for large signal, low noise industrial applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

GENERAL PURPOSE AMPLIFIERS AND SWITCHES

GENERAL PURPOSE AMPLIFIERS AND SWITCHES The 2N3108 and 2N3110 are NPN transistors mounted in TO-39 metal package. Thev are intended for large signal, low noise industrial applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

CENTRAL

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

CENTRAL

GENERAL PURPOSE AMPLIFIERS AND SWITCHES

GENERAL PURPOSE AMPLIFIERS AND SWITCHES The 2N3108 and 2N3110 are NPN transistors mounted in TO-39 metal package. They are intended for large signal, low noise industrial applications. Compliance to RoHS.

COMSET

GENERAL PURPOSE AMPLIFIERS AND SWITCHES

GENERAL PURPOSE AMPLIFIERS AND SWITCHES The 2N3108 and 2N3110 are NPN transistors mounted in TO-39 metal package. Thev are intended for large signal, low noise industrial applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES THE 2N3107 THROUGH 2N3110 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUPUTS, AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4032, 2N4030.

MICRO-ELECTRONICS

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

CENTRAL

NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3114 is a NPN Silicon Transistor, mounted in a hermetically sealed package, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER

CENTRAL

SILICON PLANAR EPITAXIAL NPN TRANSISTOR

Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications Bipolar NPN Device. VCEO = 150V IC = 0.1A

TTELEC

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

CENTRAL

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

CENTRAL

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

CENTRAL

SI NPN LO-PWR BJT MANUFACTURER

Description: Si NPN Lo-Pwr BJT

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

CENTRAL

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

CENTRAL

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

CENTRAL

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

CENTRAL

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

CENTRAL

PNP SILICON EPITAXIAL TRANSISTORS

PNP Silicon Epitaxial Transistors APPLICATIONS These transistors are designed for use as small signal and medium power amplifiers as well as high speed, high current switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP SILICON EPITAXIAL TRANSISTORS

PNP Silicon Epitaxial Transistors APPLICATIONS These transistors are designed for use as small signal and medium power amplifiers as well as high speed, high current switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

CENTRAL

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

CENTRAL

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

CENTRAL

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

CENTRAL

NPN SILICON ANNULAR TRANSISTORS

NPN silicon annular transistors for large signal VHF and UHF applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SPRINGFIELD NEW JERSEY 07081

NPN Silicon AF Medium Amplifiers and Switches

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon PNP Power Transistor

DESCRIPTION • Excellent Safe Operating Area • Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • All semelab hermetically sealed products,can be pro

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications

ISC

无锡固电

alloy-junction germanium transistors

[INTEX/ SEMITRONICS CORP] alloy-junction germanium transistors

ETCList of Unclassifed Manufacturers

未分类制造商

GERMAIUM PNP MESA TRANSISTORS

GERMABIUM PNP MESA TRANSISTORS GERMABIUM PNP SMALL SIGNAL TRANSISTORS

AMMSEMI

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Excellent safe operating area • Low collector saturation voltage APPLICATIONS • For medium-speed switching and amplifier applications

SAVANTIC

isc Silicon PNP Power Transistor

DESCRIPTION • Excellent Safe Operating Area • With TO-3 package • Low collector saturation voltage • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • For medium-speed switching and amplifier applications

ISC

无锡固电

Bipolar NPN Device in a Hermetically sealed TO39

文件:15.36 Kbytes Page:1 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed TO39

文件:15.35 Kbytes Page:1 Pages

SEME-LAB

封装/外壳:TO-205AD,TO-39-3 金属罐 包装:管件 描述:TRANS NPN 60V TO39 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

NPN SS AMP 5W TRANSISTOR

ONSEMI

安森美半导体

Bipolar NPN Device

文件:11.12 Kbytes Page:1 Pages

SEME-LAB

General Purpose Transistors

文件:121.76 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

General Purpose Transistors

文件:121.76 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Bipolar NPN Device in a Hermetically sealed TO39

文件:16.16 Kbytes Page:1 Pages

SEME-LAB

Bipolar Junction Transistors

TTELEC

Trans GP BJT NPN 150V 3-Pin TO-39 Box

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON TRANSISTOR

文件:495.47 Kbytes Page:2 Pages

CENTRAL

SILICON PLANAR EPITAXIAL NPN TRANSISTOR

文件:163.52 Kbytes Page:3 Pages

SEME-LAB

Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications

文件:10.64 Kbytes Page:1 Pages

SEME-LAB

SILICON PLANAR EPITAXIAL NPN TRANSISTOR

文件:163.52 Kbytes Page:3 Pages

SEME-LAB

封装/外壳:TO-206AA,TO-18-3 金属罐 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 60V 0.05A TO18 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

CENTRAL

NPN SILICON TRANSISTOR

文件:538.75 Kbytes Page:2 Pages

CENTRAL

GERMANIUM PNP TRANSISTORS

文件:2.44311 Mbytes Page:6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

GERMANIUM PNP TRANSISTORS

文件:2.44311 Mbytes Page:6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SI NPN POWER HF BJI MANUFACTURER

文件:97.83 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N31产品属性

  • 类型

    描述

  • Maximum Transition Frequency:

    40(Min)MHz

  • Maximum Emitter Base Voltage:

    5V

  • Maximum Collector Emitter Voltage:

    150V

  • Maximum Collector Emitter Saturation Voltage:

    1@50mAV

  • Maximum Collector Base Voltage:

    150V

  • Configuration:

    Single

  • Category:

    Bipolar Small Signal

更新时间:2026-5-14 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
WILLSEMI
2016+
DFN6
3000
只做原装,假一罚十,公司可开17%增值税发票!
WILLSEM
24+
DFN6
8000
只做自己库存 全新原装进口正品假一赔百 可开13%增
WILLSEMI
23+
DFN2X2-6L
50000
原装正品 支持实单
原装
20+
原装
56200
原装优势主营型号-可开原型号增税票
WILLSEMI
2517+
DFN2x2-6L
8850
只做原装正品现货或订货假一赔十!
WILLSEMI
24+
300855
原装现货
WILLSEMI
15+
DFN6
880000
明嘉莱只做原装正品现货
WILLSEMI
25+
DFN-6
15000
全新原装现货,价格优势
韦尔Willsemi
22+
QFN
20000
公司只做原装 品质保障
WILLSEMI
24+
DFN2X2-6L
9600
原装现货,优势供应,支持实单!

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