封装/外壳：TO-205AD，TO-39-3 金属罐 包装：散装 描述：SMALL-SIGNAL BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN medium power transistor

DESCRIPTION NPN medium power transistor in a TO-39 metal package. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Amplifier and switching circuits.

HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS

DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.

Chip Type 2C3019 Geometry 4500 Polarity PNP

Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

Chip Type 2C3019 Geometry 4500 Polarity PNP

Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

Type 2N3019S Geometry 4500 Polarity NPN

Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.