Type 2N3019S Geometry 4500 Polarity NPN

Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

Chip Type 2C3019 Geometry 4500 Polarity PNP

Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

LOW POWER NPN SILICON TRANSISTOR

LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391

Low Power Transistor

Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV

NPN Transistor

This 2N3019S NPN leaded silicon transistor device is military qualified for high-reliability applications.  Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.

Silicon NPN Transistor

文件：200.41 Kbytes Page：2 Pages

封装/外壳：TO-205AD，TO-39-3 金属罐 包装：管件 描述：TRANS NPN 80V 1A TO39 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Transistor

文件：200.41 Kbytes Page：2 Pages

Low Power Transistors

文件：112.73 Kbytes Page：4 Pages

封装/外壳：TO-205AD，TO-39-3 金属罐 包装：散装 描述：SMALL-SIGNAL BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Chip Type 2C3019 Geometry 4500 Polarity PNP

Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

NPN medium power transistor

DESCRIPTION NPN medium power transistor in a TO-39 metal package. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Amplifier and switching circuits.

HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS

DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.