DUAL HIGH FREQUENCY NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

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Bipolar Junction Transistors

HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS

DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.

NPN medium power transistor

DESCRIPTION NPN medium power transistor in a TO-39 metal package. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Amplifier and switching circuits.

Chip Type 2C3019 Geometry 4500 Polarity PNP

Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

Chip Type 2C3019 Geometry 4500 Polarity PNP

Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

Type 2N3019S Geometry 4500 Polarity NPN

Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.