GERMANIUM PNP TRANSISTORS

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Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

NPN SILICON HIGH SPEED SWITCHING TRANSISTORS

DESCRIPTION The Centra Semiconductor 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors designed for high speed, medium power saturated switching applications.

NPN SILICON HIGH SPEED SWITCHING TRANSISTORS

NPN SILICON HIGH SPEED SWITCHING TRANSISTORS 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors designed for high speed, medium power saturated switching applications.

N-P-N EPITAXIAL MESA SILICON TRANSISTORS

NPN SILICON HIGH SPEED SWITCHING TRANSISTORS 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors designed for high speed, medium power saturated switching applications.

NPN SILICON HIGH SPEED SWITCHING TRANSISTORS

NPN SILICON HIGH SPEED SWITCHING TRANSISTORS 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors designed for high speed, medium power saturated switching applications.

NPN SILICON HIGH SPEED SWITCHING TRANSISTORS

DESCRIPTION The Centra Semiconductor 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors designed for high speed, medium power saturated switching applications.

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

NPN medium power transistor

DESCRIPTION NPN medium power transistor in a TO-39 metal package. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Amplifier and switching circuits.

GENERAL TRANSISTOR NPN SILICON

GENERAL TRANSISTORS NPN SILICON

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Designed for use in General Purpose Amplifier and High Speed Switching Applications These Transistors are also Suitable for High Current Amplifier Applications

LOW POWER NPN SILICON TRANSISTOR

LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391

Low Power Transistor

Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV

isc Silicon NPN Power Transistor

Silicon NPN Power Transistor

NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

SILICON PLANAR EPITAXIAL TRANSISTORS

The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages. Compliance to RoHS

Chip Type 2C3019 Geometry 4500 Polarity PNP

Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

Type 2N3019 Geometry 4500 Polarity NPN

Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

SMALL SIGNAL NPN TRANSISTOR

DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.

NPN SILICON PLANAR TRANSISTOR

NPN Silicon Planar Transistor 2 N 3019 is an epitaxial NPN silicon planar transistor in TO 39 case (6 C 3 DIN 41873). The collector is electrically connected to the case. The transistor is particularly suitable for use in Af amplifiers and for AF switching applications.

NPN Transistor Bare Die

Features:  Collector current up to 1A  Low Leakage Current & Saturation Voltage  Characterized at temperature extremes  High Reliability Gold Back Metal  High Reliability tested grades for Military + Space

HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS

DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.

NPN SILICON TRANSISTOR

FEATURES • NPN High Voltage Planar Transistor • Hermetic TO39 Package • Full Screening Options Available

Hi-Rel NPN bipolar transistor 80 V, 1 A

Description The 2N3019HR is a silicon planar epitaxial NPN transistor in a TO-39 package. It is specifically designed for aerospace Hi-Rel applications, and ESCC qualified in accordance with the 5201-003 specification. In case of discrepancies between this datasheet and ESCC detailed specificatio

Type 2N3019S Geometry 4500 Polarity NPN

Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

Chip Type 2C3019 Geometry 4500 Polarity PNP

Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

Low Power Transistor

Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV

LOW POWER NPN SILICON TRANSISTOR

LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391

Chip Type 2C3019 Geometry 4500 Polarity PNP

Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

Bipolar NPN Device in a Hermetically sealed TO18

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SILICON NPN TRANSISTOR

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Bipolar PNP Device in a Hermetically sealed TO18

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Bipolar Junction Transistors

Bipolar Junction Transistors

Bipolar NPN Device in a Hermetically sealed LCC1

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封装/外壳：TO-206AA，TO-18-3 金属罐 包装：管件 描述：TRANS NPN 15V 0.2A TO18 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN HS MED PWR SWITCH

NPN SILICON HIGH SPEED SWITCHING TRANSISTORS

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NPN SILICON HIGH SPEED SWITCHING TRANSISTORS

文件：83.49 Kbytes Page：1 Pages

封装/外壳：TO-206AC，TO-52-3，金属罐 包装：管件 描述：TRANS NPN 20V 0.2A TO52-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

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SILICON PLANAR EPITAXIAL TRANSISTORS

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Silicon NPN Transistor

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NPN SILICON TRANSISTOR

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SMALL SIGNAL NPN TRANSISTOR

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NPN SILICON TRANSISTOR

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NPN SILICON TRANSISTOR

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NPN SILICON TRANSISTOR

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SMALL SIGNAL NPN TRANSISTOR

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Silicon NPN Transistor

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SILICON PLANAR EPITAXIAL TRANSISTORS

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NPN SILICON TRANSISTOR

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HIGH FREQUENCY, NPN TRANSISTOR

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HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

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HIGH FREQUENCY, NPN TRANSISTOR

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DUAL HIGH FREQUENCY NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

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