2N30晶体管资料

  • 2N30别名:2N30三极管、2N30晶体管、2N30晶体三极管

  • 2N30生产厂家:美国通用电器公司

  • 2N30制作材料:Ge-NPN

  • 2N30性质:低频或音频放大 (LF)_射频/高频放大 (HF)

  • 2N30封装形式:特殊封装

  • 2N30极限工作电压:30V

  • 2N30最大电流允许值:0.007A

  • 2N30最大工作频率:<1MHZ或未知

  • 2N30引脚数

  • 2N30最大耗散功率:0.1W

  • 2N30放大倍数

  • 2N30图片代号:NO

  • 2N30vtest:30

  • 2N30htest:999900

  • 2N30atest:0.007

  • 2N30wtest:0.1

  • 2N30代换 2N30用什么型号代替:AC124,AC125,AC126,AC127,AF200,AF126,2N3323,2N3324,2N3325,3AG53C,

2N30价格

参考价格:¥0.0000

型号:2N3011 品牌:All American 备注:这里有2N30多少钱,2025年最近7天走势,今日出价,今日竞价,2N30批发/采购报价,2N30行情走势销售排行榜,2N30报价。
型号 功能描述 生产厂家 企业 LOGO 操作

SCRs (Silicon Controlled Rectifiers)

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Package 0.8 to 110 Amperes RMS 15 to 1200 Volts

boca

博卡

0.8 to 110 Amperes RMS 15 to 1200 Volts

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts

Central

Silicon Controlled Rectifiers

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON CONTROLLED SWITCH

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon Controlled Rectifiers

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SCRs (Silicon Controlled Rectifiers)

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Package 0.8 to 110 Amperes RMS 15 to 1200 Volts

boca

博卡

0.8 to 110 Amperes RMS 15 to 1200 Volts

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts

Central

SCRs (Silicon Controlled Rectifiers)

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Package 0.8 to 110 Amperes RMS 15 to 1200 Volts

boca

博卡

0.8 to 110 Amperes RMS 15 to 1200 Volts

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts

Central

Silicon Controlled Rectifiers

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon Controlled Rectifiers

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTOR

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SCRs (Silicon Controlled Rectifiers)

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Package 0.8 to 110 Amperes RMS 15 to 1200 Volts

boca

博卡

0.8 to 110 Amperes RMS 15 to 1200 Volts

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts

Central

SCRs (Silicon Controlled Rectifiers)

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Package 0.8 to 110 Amperes RMS 15 to 1200 Volts

boca

博卡

0.8 to 110 Amperes RMS 15 to 1200 Volts

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts

Central

Silicon Controlled Rectifiers

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SCR, V(DRM)

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon Controlled Rectifiers

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SCRs (Silicon Controlled Rectifiers)

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Package 0.8 to 110 Amperes RMS 15 to 1200 Volts

boca

博卡

0.8 to 110 Amperes RMS 15 to 1200 Volts

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts

Central

SCRs (Silicon Controlled Rectifiers)

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Package 0.8 to 110 Amperes RMS 15 to 1200 Volts

boca

博卡

0.8 to 110 Amperes RMS 15 to 1200 Volts

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts

Central

Silicon Controlled Rectifiers

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon Controlled Rectifiers

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON REVERSE-BLOCKING TRIODE THYRISTOR

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

0.8 to 110 Amperes RMS 15 to 1200 Volts

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts

Central

SCRs (Silicon Controlled Rectifiers)

SCRs (Silicon Controlled Rectifiers) Metal/Plastic Package 0.8 to 110 Amperes RMS 15 to 1200 Volts

boca

博卡

NPN SILICON HIGH SPEED SWITCHING TRANSISTORS

DESCRIPTION The Centra Semiconductor 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors designed for high speed, medium power saturated switching applications.

Central

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

Central

NPN SILICON HIGH SPEED SWITCHING TRANSISTORS

NPN SILICON HIGH SPEED SWITCHING TRANSISTORS 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors designed for high speed, medium power saturated switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

Central

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

Central

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

Central

NPN SILICON HIGH SPEED SWITCHING TRANSISTORS

DESCRIPTION The Centra Semiconductor 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors designed for high speed, medium power saturated switching applications.

Central

NPN SILICON HIGH SPEED SWITCHING TRANSISTORS

NPN SILICON HIGH SPEED SWITCHING TRANSISTORS 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors designed for high speed, medium power saturated switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-P-N EPITAXIAL MESA SILICON TRANSISTORS

NPN SILICON HIGH SPEED SWITCHING TRANSISTORS 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors designed for high speed, medium power saturated switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON HIGH SPEED SWITCHING TRANSISTORS

NPN SILICON HIGH SPEED SWITCHING TRANSISTORS 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors designed for high speed, medium power saturated switching applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON HIGH SPEED SWITCHING TRANSISTORS

DESCRIPTION The Centra Semiconductor 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors designed for high speed, medium power saturated switching applications.

Central

Small Signal Transistors

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER

Central

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

Central

Small Signal Transistors

Small Signal Transistors TO-39 Case (Continued)

Central

GENERAL TRANSISTOR NPN SILICON

GENERAL TRANSISTORS NPN SILICON

boca

博卡

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

Designed for use in General Purpose Amplifier and High Speed Switching Applications These Transistors are also Suitable for High Current Amplifier Applications

CDIL

LOW POWER NPN SILICON TRANSISTOR

LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391

Microsemi

美高森美

Low Power Transistor

Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV

ONSEMI

安森美半导体

NPN medium power transistor

DESCRIPTION NPN medium power transistor in a TO-39 metal package. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Amplifier and switching circuits.

Philips

飞利浦

Chip Type 2C3019 Geometry 4500 Polarity PNP

Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

Semicoa

Type 2N3019 Geometry 4500 Polarity NPN

Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

Semicoa

SILICON PLANAR EPITAXIAL TRANSISTORS

The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages. Compliance to RoHS

COMSET

NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES

MICRO-ELECTRONICS

isc Silicon NPN Power Transistor

Silicon NPN Power Transistor

ISC

无锡固电

SMALL SIGNAL NPN TRANSISTOR

DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN SILICON PLANAR TRANSISTOR

NPN Silicon Planar Transistor 2 N 3019 is an epitaxial NPN silicon planar transistor in TO 39 case (6 C 3 DIN 41873). The collector is electrically connected to the case. The transistor is particularly suitable for use in Af amplifiers and for AF switching applications.

SIEMENS

西门子

NPN Transistor Bare Die

Features:  Collector current up to 1A  Low Leakage Current & Saturation Voltage  Characterized at temperature extremes  High Reliability Gold Back Metal  High Reliability tested grades for Military + Space

SS

HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS

DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.

STMICROELECTRONICS

意法半导体

NPN SILICON TRANSISTOR

FEATURES • NPN High Voltage Planar Transistor • Hermetic TO39 Package • Full Screening Options Available

TTELEC

Hi-Rel NPN bipolar transistor 80 V, 1 A

Description The 2N3019HR is a silicon planar epitaxial NPN transistor in a TO-39 package. It is specifically designed for aerospace Hi-Rel applications, and ESCC qualified in accordance with the 5201-003 specification. In case of discrepancies between this datasheet and ESCC detailed specificatio

STMICROELECTRONICS

意法半导体

Chip Type 2C3019 Geometry 4500 Polarity PNP

Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

Semicoa

Type 2N3019S Geometry 4500 Polarity NPN

Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications.

Semicoa

2N30产品属性

  • 类型

    描述

  • 型号

    2N30

  • 制造商

    BOCA

  • 制造商全称

    Boca Semiconductor Corporation

  • 功能描述

    SCRs(Silicon Controlled Rectifiers)

更新时间:2025-12-25 11:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2511
CAN to-39
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST
25+
CAN to-39
16900
原装,请咨询
MOT
24+
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
MOTOROLA/摩托罗拉
23+
CAN
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
ST
23+
CAN to-39
16900
正规渠道,只有原装!
MOTOROLA
专业铁帽
CAN3
100
原装铁帽专营,代理渠道量大可订货
24+
CAN
7000
MOT
2023+
CAN
50000
全新原装现货
ST
26+
CAN to-39
60000
只有原装 可配单
MOTOROLA/摩托罗拉
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票

2N30数据表相关新闻