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2N30晶体管资料
2N30别名:2N30三极管、2N30晶体管、2N30晶体三极管
2N30生产厂家:美国通用电器公司
2N30制作材料:Ge-NPN
2N30性质:低频或音频放大 (LF)_射频/高频放大 (HF)
2N30封装形式:特殊封装
2N30极限工作电压:30V
2N30最大电流允许值:0.007A
2N30最大工作频率:<1MHZ或未知
2N30引脚数:
2N30最大耗散功率:0.1W
2N30放大倍数:
2N30图片代号:NO
2N30vtest:30
2N30htest:999900
- 2N30atest:0.007
2N30wtest:0.1
2N30代换 2N30用什么型号代替:AC124,AC125,AC126,AC127,AF200,AF126,2N3323,2N3324,2N3325,3AG53C,
2N30价格
参考价格:¥0.0000
型号:2N3011 品牌:All American 备注:这里有2N30多少钱,2025年最近7天走势,今日出价,今日竞价,2N30批发/采购报价,2N30行情走势销售排行榜,2N30报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SCRs (Silicon Controlled Rectifiers) SCRs (Silicon Controlled Rectifiers) Metal/Plastic Package 0.8 to 110 Amperes RMS 15 to 1200 Volts | boca 博卡 | |||
0.8 to 110 Amperes RMS 15 to 1200 Volts SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts | Central | |||
Silicon Controlled Rectifiers SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
SILICON CONTROLLED SWITCH SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon Controlled Rectifiers SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
SCRs (Silicon Controlled Rectifiers) SCRs (Silicon Controlled Rectifiers) Metal/Plastic Package 0.8 to 110 Amperes RMS 15 to 1200 Volts | boca 博卡 | |||
0.8 to 110 Amperes RMS 15 to 1200 Volts SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts | Central | |||
SCRs (Silicon Controlled Rectifiers) SCRs (Silicon Controlled Rectifiers) Metal/Plastic Package 0.8 to 110 Amperes RMS 15 to 1200 Volts | boca 博卡 | |||
0.8 to 110 Amperes RMS 15 to 1200 Volts SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts | Central | |||
Silicon Controlled Rectifiers SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon Controlled Rectifiers SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-N-P-N PLANAR SILICON REVERSE-BLOCKING TRIODE THYRISTOR SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
SCRs (Silicon Controlled Rectifiers) SCRs (Silicon Controlled Rectifiers) Metal/Plastic Package 0.8 to 110 Amperes RMS 15 to 1200 Volts | boca 博卡 | |||
0.8 to 110 Amperes RMS 15 to 1200 Volts SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts | Central | |||
SCRs (Silicon Controlled Rectifiers) SCRs (Silicon Controlled Rectifiers) Metal/Plastic Package 0.8 to 110 Amperes RMS 15 to 1200 Volts | boca 博卡 | |||
0.8 to 110 Amperes RMS 15 to 1200 Volts SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts | Central | |||
Silicon Controlled Rectifiers SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
SCR, V(DRM) SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon Controlled Rectifiers SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
SCRs (Silicon Controlled Rectifiers) SCRs (Silicon Controlled Rectifiers) Metal/Plastic Package 0.8 to 110 Amperes RMS 15 to 1200 Volts | boca 博卡 | |||
0.8 to 110 Amperes RMS 15 to 1200 Volts SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts | Central | |||
SCRs (Silicon Controlled Rectifiers) SCRs (Silicon Controlled Rectifiers) Metal/Plastic Package 0.8 to 110 Amperes RMS 15 to 1200 Volts | boca 博卡 | |||
0.8 to 110 Amperes RMS 15 to 1200 Volts SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts | Central | |||
Silicon Controlled Rectifiers SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon Controlled Rectifiers SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
SILICON REVERSE-BLOCKING TRIODE THYRISTOR SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
0.8 to 110 Amperes RMS 15 to 1200 Volts SCRs (Silicon Controlled Rectifiers) Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts | Central | |||
SCRs (Silicon Controlled Rectifiers) SCRs (Silicon Controlled Rectifiers) Metal/Plastic Package 0.8 to 110 Amperes RMS 15 to 1200 Volts | boca 博卡 | |||
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS DESCRIPTION The Centra Semiconductor 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors designed for high speed, medium power saturated switching applications. | Central | |||
Small Signal Transistors DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER | Central | |||
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS NPN SILICON HIGH SPEED SWITCHING TRANSISTORS 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors designed for high speed, medium power saturated switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Small Signal Transistors DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER | Central | |||
Small Signal Transistors DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER | Central | |||
Small Signal Transistors DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER | Central | |||
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS DESCRIPTION The Centra Semiconductor 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors designed for high speed, medium power saturated switching applications. | Central | |||
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS NPN SILICON HIGH SPEED SWITCHING TRANSISTORS 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors designed for high speed, medium power saturated switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
N-P-N EPITAXIAL MESA SILICON TRANSISTORS NPN SILICON HIGH SPEED SWITCHING TRANSISTORS 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors designed for high speed, medium power saturated switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS NPN SILICON HIGH SPEED SWITCHING TRANSISTORS 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors designed for high speed, medium power saturated switching applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS DESCRIPTION The Centra Semiconductor 2N3009, 2N3013, 2N3014 types are Silicon NPN switching Transistors designed for high speed, medium power saturated switching applications. | Central | |||
Small Signal Transistors DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER | Central | |||
Small Signal Transistors Small Signal Transistors TO-39 Case (Continued) | Central | |||
Small Signal Transistors Small Signal Transistors TO-39 Case (Continued) | Central | |||
GENERAL TRANSISTOR NPN SILICON GENERAL TRANSISTORS NPN SILICON | boca 博卡 | |||
NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for use in General Purpose Amplifier and High Speed Switching Applications These Transistors are also Suitable for High Current Amplifier Applications | CDIL | |||
LOW POWER NPN SILICON TRANSISTOR LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 | Microsemi 美高森美 | |||
Low Power Transistor Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV | ONSEMI 安森美半导体 | |||
NPN medium power transistor DESCRIPTION NPN medium power transistor in a TO-39 metal package. FEATURES • High current (max. 1 A) • Low voltage (max. 80 V). APPLICATIONS • Amplifier and switching circuits. | Philips 飞利浦 | |||
Chip Type 2C3019 Geometry 4500 Polarity PNP Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. | Semicoa | |||
Type 2N3019 Geometry 4500 Polarity NPN Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. | Semicoa | |||
SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages. Compliance to RoHS | COMSET | |||
NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES | MICRO-ELECTRONICS | |||
isc Silicon NPN Power Transistor Silicon NPN Power Transistor | ISC 无锡固电 | |||
SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
NPN SILICON PLANAR TRANSISTOR NPN Silicon Planar Transistor 2 N 3019 is an epitaxial NPN silicon planar transistor in TO 39 case (6 C 3 DIN 41873). The collector is electrically connected to the case. The transistor is particularly suitable for use in Af amplifiers and for AF switching applications. | SIEMENS 西门子 | |||
NPN Transistor Bare Die Features: Collector current up to 1A Low Leakage Current & Saturation Voltage Characterized at temperature extremes High Reliability Gold Back Metal High Reliability tested grades for Military + Space | SS | |||
HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage. | STMICROELECTRONICS 意法半导体 | |||
NPN SILICON TRANSISTOR FEATURES • NPN High Voltage Planar Transistor • Hermetic TO39 Package • Full Screening Options Available | TTELEC | |||
Hi-Rel NPN bipolar transistor 80 V, 1 A Description The 2N3019HR is a silicon planar epitaxial NPN transistor in a TO-39 package. It is specifically designed for aerospace Hi-Rel applications, and ESCC qualified in accordance with the 5201-003 specification. In case of discrepancies between this datasheet and ESCC detailed specificatio | STMICROELECTRONICS 意法半导体 | |||
Chip Type 2C3019 Geometry 4500 Polarity PNP Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. | Semicoa | |||
Type 2N3019S Geometry 4500 Polarity NPN Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Features: Radiation graphs available Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. | Semicoa |
2N30产品属性
- 类型
描述
- 型号
2N30
- 制造商
BOCA
- 制造商全称
Boca Semiconductor Corporation
- 功能描述
SCRs(Silicon Controlled Rectifiers)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2511 |
CAN to-39 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ST |
25+ |
CAN to-39 |
16900 |
原装,请咨询 |
|||
MOT |
24+ |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
||||
MOTOROLA/摩托罗拉 |
23+ |
CAN |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
ST |
23+ |
CAN to-39 |
16900 |
正规渠道,只有原装! |
|||
MOTOROLA |
专业铁帽 |
CAN3 |
100 |
原装铁帽专营,代理渠道量大可订货 |
|||
24+ |
CAN |
7000 |
|||||
MOT |
2023+ |
CAN |
50000 |
全新原装现货 |
|||
ST |
26+ |
CAN to-39 |
60000 |
只有原装 可配单 |
|||
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
2N30芯片相关品牌
2N30规格书下载地址
2N30参数引脚图相关
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2N30数据表相关新闻
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2019-4-16
DdatasheetPDF页码索引
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