GERMANIUM PNP TRANSISTORS

文件：2.44311 Mbytes Page：6 Pages

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service.

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service.

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service.

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service.

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service.

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service.

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service.

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service.

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service.

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service.

20 STERN AVE.

SILICON PLANAR NPN POWER TRANSISTORS

包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Trans GP BJT NPN 250V 30A 3-Pin TO-63

Trans GP BJT NPN 250V 30A 3-Pin TO-63

HIGH S.O.A NPN POWER TRANSISTORS (ALLOY)

封装/外壳：TO-211MB，TO-63-4，接线柱 包装：散装 描述：POWER BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个