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2N27晶体管资料
2N27别名:2N27三极管、2N27晶体管、2N27晶体三极管
2N27生产厂家:英国维斯特科特半导体公司
2N27制作材料:Ge-NPN
2N27性质:低频或音频放大 (LF)_射频/高频放大 (HF)
2N27封装形式:直插封装
2N27极限工作电压:35V
2N27最大电流允许值:
2N27最大工作频率:>1MHZ
2N27引脚数:3
2N27最大耗散功率:0.05W
2N27放大倍数:
2N27图片代号:D-161
2N27vtest:35
2N27htest:1000100
- 2N27atest:0
2N27wtest:0.05
2N27代换 2N27用什么型号代替:AC127,AC176,AC187,AC194,ASY28,2N1302,3BX31C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
GE PNP LO-PWR BJT Description: Ge PNP Lo-Pwr BJT | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Small Signal Transistors Small Signal Transistors TO-18 Case (Continued) | Central | |||
NPN Small Signal High Speed Low Power Saturating Switch Transistor NPN Small Signal High Speed Low Power Saturating Switch Transistor | Fairchild 仙童半导体 | |||
Small Signal Transistors Small Signal Transistors | Central | |||
Small Signal Transistors Small Signal Transistors | Central | |||
Dual Transistors Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power) | Central | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A DUAL AMPLIFIER TRANSISTOR NPN SILICON | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A SILICON TRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE. SILICON PLANAR NPN POWER TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE Small Signal Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Small Signal Transistors Small Signal Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
SMALL SIGNAL TRANSISTORS Small Signal Transistors TO-39 Case (Continued) | Central | |||
Small Signal Transistors Small Signal Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Small Signal Transistors Small Signal Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Small Signal Transistors Small Signal Transistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
SMALL SIGNAL TRANSISTORS Small Signal Transistors TO-39 Case (Continued) | Central | |||
20 STERN AVE. SILICON PLANAR NPN POWER TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE. SILICON PLANAR NPN POWER TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
POWER TRANSISTOR POWER TRANSISTOR | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A General Description This transistor is a NPN silicon power transistor designed primarily for high power switching applications and inverters at or below the collector current give in Table I. It is intended for Industrial and Military class of service. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE. SILICON PLANAR NPN POWER TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A Two NPN silicon annular transistors connected as a darlington amplifier, and designed for applications requiring very high gain. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
GERMANIUM PNP TRANSISTORS 文件:2.44311 Mbytes Page:6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
GERMANIUM PNP TRANSISTORS 文件:2.44311 Mbytes Page:6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A 文件:81.41 Kbytes Page:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
NPN Small Signal High Speed Low Power Saturating Switch Transistor | ONSEMI 安森美半导体 | |||
NPN SILICON TRANSISTOR | MICRO-ELECTRONICS | |||
Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch | Central | |||
封装/外壳:TO-78-6 金属罐 包装:管件 描述:TRANS NPN DUAL TO78 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 阵列 | Central | |||
封装/外壳:TO-78-6 金属罐 包装:管件 描述:TRANS 2NPN 40MA 45V TO78-6 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 阵列 | Central | |||
GERMANIUM PNP TRANSISTORS 文件:2.44311 Mbytes Page:6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
GERMANIUM PNP TRANSISTORS 文件:2.44311 Mbytes Page:6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
GERMANIUM PNP TRANSISTORS 文件:2.44311 Mbytes Page:6 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
NPN SILICON TRANSISTOR 文件:140.96 Kbytes Page:1 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 |
2N27产品属性
- 类型
描述
- 型号
2N27
- 制造商
MST
- 制造商
RCA
- 制造商
ELCIND
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA/摩托罗拉 |
23+ |
CAN |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
24+ |
N/A |
56000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
DELCO |
2447 |
CAN |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
MOTOROLA |
专业铁帽 |
CAN3 |
1200 |
原装铁帽专营,代理渠道量大可订货 |
|||
24+ |
CAN |
7000 |
|||||
MOT |
2023+ |
CAN |
50000 |
全新原装现货 |
|||
MOTOROLA/摩托罗拉 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
MOT |
24+ |
CAN3 |
6540 |
原装现货/欢迎来电咨询 |
|||
MOT |
24+ |
CAN3 |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
MOTOROLA |
24+ |
CAN3 |
1200 |
原装现货假一罚十 |
2N27芯片相关品牌
2N27规格书下载地址
2N27参数引脚图相关
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- 2N2631
2N27数据表相关新闻
2N150L-TO263R-TG_UTC代理商
2N150L-TO263R-TG_UTC代理商
2023-2-212MBI450VJ-120-50
2MBI450VJ-120-50,全新原装,门市自取或当天发货。
2022-7-62N3773
2N3773,全新原装当天发货或门市自取0755-82732291.
2020-4-242N3904S-RTK/PS,SOT-23,KEC原装正品现货
2N3904S-RTK/P S,SOT-23,KEC原装正品现货
2019-7-172N3499铁帽现货供应
2N3499铁帽 现货供应
2019-4-162N2484ATO-3铁帽晶体管STMOTO金封功率三极管现货价优
2N2484A TO-3铁帽晶体管ST MOTO金封功率三极管现货价优
2019-4-16
DdatasheetPDF页码索引
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