Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

DUAL AMPLIFIER TRANSISTORS NPN SILICON

DUAL AMPLIFIER TRANSISTORS NPN SILICON

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

DUAL AMPLIFIER TRANSISTORS NPN SILICON

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

DUAL AMPLIFIER TRANSISTORS NPN SILICON

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

Dual Transistors

Dual Transistors PD@ TA=25°C=600mW Total (Both Die Equal Power)

DUAL AMPLIFIER TRANSISTORS NPN SILICON

Small Signal Transistors

Small Signal Transistors TO-18 Case (Continued)

SILICON UNIJONCTION TRANSISTORS

[DIGITRON] SILICON UNIJUNCTION TRANSISTOR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

SILICON PN UNIVUNCTION TRANSISTOR

DESCRIPTION: The 2N2646 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications.

SILICON UNIJUNCTION TRANSISTORS

SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches. The 2N2646 is inten

Silicon PN Unijuction Transistor

Silicon PN Unijunction Transistor ... designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits.

Silicon unijunction transistor

Silicon unijunction transistor

Unijunction Transistor

Description: A TO-18, PN, Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits, and thyristor trigger circuits. Features: •Low peak point current : 2μA (Max.) •Low emitter reverse current : 200nA (Max.) •Passivated surface for reliability and uniformity

MU4893

MU4893

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

Silicon Unijunction Transistors The General Electric 2N2646 and 2N2647 Silicon Unijunction Transistors have an entirely new structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse Voltage. In addition, these devices are m

SILICON UNIJUNCTION TRANSISTOR

SILICON UNIJUNCTION TRANSISTOR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

SILICON UNIJUNCTION TRANSISTOR

SILICON UNIJUNCTION TRANSISTOR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Transistor Unijunction

Description: A PN Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits, and thyristor trigger circuits. Features: • Low peak point current: 2µA (Max.) • Low emitter reverse current: 200nA (Max.) • Passivated surface for reliability and uniformity

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

Silicon Unijunction Transistors The General Electric 2N2646 and 2N2647 Silicon Unijunction Transistors have an entirely new structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse Voltage. In addition, these devices are m

SILICON UNIJONCTION TRANSISTORS

[DIGITRON] SILICON UNIJUNCTION TRANSISTOR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Silicon PN Unijuction Transistor

Silicon PN Unijunction Transistor ... designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits.

MU4893

MU4893

SILICON UNIJUNCTION TRANSISTORS

SILICON UNIJUNCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as zell as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches. The 2N2646 is inten

Dual Bipolar NPN Devices in a hermetically sealed

文件：15.04 Kbytes Page：1 Pages

封装/外壳：TO-78-6 金属罐 包装：管件 描述：TRANS 2NPN 30MA 45V TO78-6 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列

DUAL BIPOLAR NPN DEVICES IN A HERMETICALLY SEALED LCC2 CERAMIC SURFACE MOUNT

Trans GP BJT NPN 45V 0.03A 6-Pin LCC-2

Bipolar Junction Transistors

Dual Bipolar NPN Devices in a hermetically sealed

文件：15.04 Kbytes Page：1 Pages

封装/外壳：TO-78-6 金属罐 包装：管件 描述：TRANS 2NPN 30MA 45V TO78-6 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列

Dual Bipolar NPN Devices in a hermetically sealed

文件：15.04 Kbytes Page：1 Pages

Dual Bipolar NPN Devices in a hermetically sealed

文件：15.04 Kbytes Page：1 Pages

SILICON UNIJUNCTION TRANSISTORS

文件：124.16 Kbytes Page：2 Pages

SILICON UNIJUNCTION TRANSISTORS

文件：124.16 Kbytes Page：2 Pages

SILICON UNIJUNCTION TRANSISTORS

文件：124.16 Kbytes Page：2 Pages